NMOS器件ESD特性模拟

NMOS管I-V曲线在ESD(electrostatic discharges)脉冲电流作用下呈现出反转特性,其维持电压VH、维持电流IH、触发电压VB、触发电流IB以及二次击穿电流等参数将会影响NMOS管器件的抗ESD能力。文章通过采用SILVACO软件,对1.0μm工艺不同沟长和工艺条件的NMOS管静电放电时的峰值电场、晶格温度以及VH进行了模拟和分析。模拟发现,在ESD触发时,增加ESD注入工艺将使结峰值场强增强,VH减小、VB减小,晶格温度降低;器件沟长和触发电压VB具有明显正相关特性,但对VH基本无影响。最后分析认为NMOS管ESD失效主要表现为高电流引起的热失效,而电场击穿引起的介质失效是次要的。     

一种新型偏置电路的CMOS亚阈型电压基准源

文章设计了一种工作在亚闽值状态下的CMOS电压基准源,分析了MOSFET工作在亚闽区的电压和电流限定条件。电压基准源可提供与工艺基本无关近似零温度系数的基准电压。为了提高电路的电源抑制比,该电路采用了共源共栅电流镜结构。该结构采用了一种新型的偏置电路．使得电流镜各级联管均工作在饱和区边缘而不脱离饱和区,提高输出电压摆幅,得到有较高恒流特性的基准电流。该电路采用0,6μmCMOS工艺,通过Spectra仿真,可工作在2V电压下,输出基准电压1.4V,温度系数为17×10^-6（V／℃）。     

双"单电桥"法测量低电阻中的实用技巧例举

主要介绍了双"单电桥"法测量低电阻的基本原理与双"单电桥"法测量低电阻的几种实用技巧.     

TiCN对钛酸钡基PTC热敏陶瓷性能的影响

采用固相反应法制备了TiCN掺杂的(Ba0.85Sr0.11Pb0.04)TiO3 PTC热敏陶瓷。研究了TiCN加入量对其显微结构和PTC性能的影响。结果表明:添加x(TiCN)为0.006时,可使晶粒结构均匀,PTC性能得到改善。所获样品的体积电阻率ρv为31.2Ω.cm,电阻温度系数αR为21%℃–1,升阻比lg(Rmax/Rmin)为5.7,居里温度tC为97℃,耐电压强度Vb为280 V.mm–1。     

SF6分解气体在线红外光谱检测系统设计

SF6气体在放电或过热时会发生电离和分解,产生多种气体分解物。这些分解物会影响电气设备的绝缘性能。但现有的红外气体检测手段均无法对SF6分解气体进行现场在线测量。根据实际需求,本文根据光栅分光的原理设计了一种红外光谱检测系统。该系统可对SF6分解气体的成分和含量进行实时测量,可在电气设备带电运行的状态下进行在线测量。测量数据为分析设备的性能和安全状况提供有力的依据。     

快速响应高压电源在KTP晶体极化反转中的应用研究

分析了KTP晶体电导率的特性,设计与研制出一种新型的高压脉冲放大器,可将任意信号发生器产生的信号线性放大,响应速度快,最高输出电压为4000V,最大输出电流为30mA,功率可达100W.用其在KTP晶体上进行多次极化反转实验,取得良好的实验结果.     

CMOS PWM D类音频功率放大器的过流保护电路

基于Class-D音频功率放大器的应用,采用失调比较器及单边迟滞技术,提出了一种过流保护电路,其核心为两个CMOS失调比较器。整个电路基于CSMC0.5μmCMOS工艺的BSIM3V3Spice典型模型,采用Hspice对比较器的特性进行了仿真。失调比较器的直流开环增益约为95dB,失调电压分别为0.25V和0.286V。仿真和测试结果显示,当音频放大器输出短路或输出短接电源时,过流保护电路都能正常启动,保证音频放大器不会受到损坏,能完全满足D类音频放大器的设计要求。过流保护电路有效面积为291μm×59.5μm。     

Filling the Charge–Discharge Voltage Gap in Flexible Hybrid Zinc-Based Batteries by Utilizing a Pseudocapacitive Material

The high charge–discharge voltage gap is one of the main bottlenecks of zinc–air batteries (ZABs) because of the kinetically sluggish oxygen reduction/evolution reactions (ORR/OER) on the oxygen electrode side. Thus, an efficient bifunctional catalyst for ORR and OER is highly desired. Herein, honeycomb-like MnCo₂O_4.5 spheres were used as an efficient bifunctional electrocatalyst. It was demonstrated that both ORR and OER catalytic activity are promoted by Mn^IV-induced oxygen vacancy defects and multiple active sites. Importantly, the multivalent ions present in the material and its defect structure endow stable pseudocapacitance within the inactive region of ORR and OER; as a result, a low charge–discharge voltage gap (0.43 V at 10 mA cm⁻²) was achieved when it was employed in a flexible hybrid Zn-based battery. This mechanism provides unprecedented and valuable insights for the development of next-generation metal–air batteries.     

A super-junction SOI-LDMOS with low resistance electron channel

A novel super-junction LDMOS with low resistance channel(LRC), named LRC-LDMOS based on the silicon-oninsulator(SOI) technology is proposed. The LRC is highly doped on the surface of the drift region, which can significantly reduce the specific on resistance(Ron,sp) in forward conduction. The charge compensation between the LRC, N-pillar,and P-pillar of the super-junction are adjusted to satisfy the charge balance, which can completely deplete the whole drift,thus the breakdown voltage(BV) is enhanced in reverse blocking. The three-dimensional(3 D) simulation results show that the BV and R_(on,sp) of the device can reach 253 V and 15.5 mΩ·cm~2, respectively, and the Baliga's figure of merit(FOM = BV~2/R_(on,sp)) of 4.1 MW/cm~2 is achieved, breaking through the silicon limit.     

脱硫用重复频率脉冲电源设计

简单介绍了高压脉冲电晕法脱硫的基本原理,以及对重复频率脉冲电源性能的要求;分析脱硫反应器独特的电气特性对电源系统的影响;对重复频率脉冲电源的设计方法及技术路线进行相关探讨。