CMOS图像传感器及其应用

CMOS图像传感器是近年来市场上出现的一种新的摄像器件,文中对CMOS图像传感器与CCD图像传感器作了比较,分析了CMOS像传感器的工作原理及其优越的性能,提供了CMOS像传感器的应用实例。CMOS成像器在红外成像领域具有广阔的应用前景。     

太阳能超声波导盲器的研制

为了帮助盲人克服行走不便的困难,提出了基于单片机的太阳能超声波导盲器的设计方法和工作原理。该导盲器由单片机主控制系统模块、太阳能供电模块、语音报警模块、量程设置模块、温度检测模块组成。其特点是温度补偿技术提高了测距精确度,太阳能供电模块高效节能,克服了盲人充电不方便的困难,智能报警模式可以改善导盲器的使用效果。     

微镜阵列激光成像技术及其性能分析

提出了一种激光三维成像技术,该方法以推扫方式工作,采用数字微镜器件(Digital Mirror Device,DMD)来进行激光回波脉冲飞行时间(Time of Flight,TOF)的空间转换。由于目标上不同距离点回波脉冲的飞行时间不同,当脉冲到达时微透镜阵列将从一个状态转换到另一个状态,在接收端传感器焦平面上显示不同相对位置的条纹,利用条纹相对距离可以重建目标的剖面轮廓距离像。相比于其他三维成像技术,该技术具有成像速率高、探测视场角大、结构简单、体积小易于集成化等优点。     

Impacts of test factors on heavy ion single event multiple-cell upsets in nanometer-scale SRAM

Single event multiple-cell upsets (MCU) increase sharply with the semiconductor devices scaling. The impacts of several test factors on heavy ion single event MCU in 65 nm SRAM are studied based on the buildup of MCU test data acquiring and processing technique, including the heavy ion LET, the tilt angle, the device orientation, the test pattern and the supply voltage; the MCU physical bitmaps are extracted correspondingly. The dependencies of parameters such as the MCU percentage, MCU mean and topological pattern on these factors are summarized and analyzed. This work is meaningful for developing a more reasonable single event test method and assessing the effectiveness of anti-MCU strategies on nanometer-scale devices.     

Electrically driven uniaxial stress device for tuning in situ semiconductor quantum dot symmetry and exciton emission in cryostat

Uniaxial stress is a powerful tool for tuning exciton emitting wavelength, polarization, fine-structure splitting (FSS), and the symmetry of quantum dots (QDs). Here, we present a technique for applying uniaxial stress, which enables us in situ to tune exciton optical properties at low temperature down to 15 K with high tuning precision. The design and operation of the device are described in detail. This technique provides a simple and convenient approach to tune QD structural symmetry, exciton energy and biexciton binding energy. It can be utilized for generating entangled and indistinguishable photons. Moreover, this device can be employed for tuning optical properties of thin film materials at low temperature.     

大口径主镜支撑液压缸用弹性膜片优化设计

在大口径望远镜主镜液压支撑形式中,液压缸需要一种简单可靠、不需要润滑维护的精密导向机构,而且可以输出较大行程范围(毫米级)。设计了一种柔性金属膜片机构用于液压缸的径向定位导向。建立了金属膜片机构有限元模型,采用几何非线性算法,研究分析了不同拓扑结构对金属膜片柔度的影响,通过不同拓扑结构金属膜片的性能分析对比可知,V 型膜片能够很好地克服应力刚化,保证柔度的稳定性;以柔度为优化目标,对金属膜片V 型的位置尺寸和形状尺寸进行了优化设计,金属膜片在导向方向上的柔度提高了14.2%;搭建了柔性金属膜片机构柔度测试平台,验证了仿真计算结果。结合实验和仿真结果可知:V 型柔性金属膜片具有良好的定位导向性能,对用于液压支撑的液压缸和主动光学的微位移促动器的导向机构的设计具有指导意义。     

减少硅片湿法清洗工艺铁离子沾污研究

为了研制出高性能电荷耦合器件（CCD）,减少硅片清洗工艺Fe离子沾污是关键。利用表面光电压（SPV）法,研究了硅片清洗过程的Fe离子沾污。研究表明,SPM（H2SO4/H2O2）→SC-1清洗,去除Fe离子污染的效果比较差;用SPM→SC-1→SC-2清洗,去除Fe离子杂质的效果较好,Fe离子污染减少了2个数量级。增加SC-1和SC-2清洗次数可以减少Fe离子沾污,但效果不明显。当化学试剂中金属杂质含量由1×10^-8 cm^-3减少到1×10^-9 cm^-3,清洗工艺Fe离子沾污减少到8.0×1010 cm^-3。     

High‐Performance Transition Metal Dichalcogenide Photodetectors Enhanced by Self‐Assembled Monolayer Doping

Most doping research into transition metal dichalcogenides (TMDs) has been mainly focused on the improvement of electronic device performance. Here, the effect of self‐assembled monolayer (SAM)‐based doping on the performance of WSe₂‐ and MoS₂‐based transistors and photodetectors is investigated. The achieved doping concentrations are ≈1.4 × 10¹¹ for octadecyltrichlorosilane (OTS) p‐doping and ≈10¹¹ for aminopropyltriethoxysilane (APTES) n‐doping (nondegenerate). Using this SAM doping technique, the field‐effect mobility is increased from 32.58 to 168.9 cm² V^?1 s in OTS/WSe₂ transistors and from 28.75 to 142.2 cm² V^?1 s in APTES/MoS₂ transistors. For the photodetectors, the responsivity is improved by a factor of ≈28.2 (from 517.2 to 1.45 × 10⁴ A W^?1) in the OTS/WSe₂ devices and by a factor of ≈26.4 (from 219 to 5.75 × 10³ A W^?1) in the APTES/MoS₂ devices. The enhanced photoresponsivity values are much higher than that of the previously reported TMD photodetectors. The detectivity enhancement is ≈26.6‐fold in the OTS/WSe₂ devices and ≈24.5‐fold in the APTES/MoS₂ devices and is caused by the increased photocurrent and maintained dark current after doping. The optoelectronic performance is also investigated with different optical powers and the air‐exposure times. This doping study performed on TMD devices will play a significant role for optimizing the performance of future TMD‐based electronic/optoelectronic applications.     

3GPP LTE‐Assisted Wi‐Fi‐Direct: Trial Implementation of Live D2D Technology

This paper is a first‐hand summary on our comprehensive live trial of cellular‐assisted device‐to‐device (D2D) communications currently being ratified by the standards community for next‐generation mobile broadband networks. In our test implementation, we employ a full‐featured 3GPP LTE network deployment and augment it with all necessary support to provide real‐time D2D connectivity over emerging Wi‐Fi‐Direct (WFD) technology. As a result, our LTE‐assisted WFD D2D system enjoys the required flexibility while meeting the existing standards in every feasible detail. Further, this paper provides an account on the extensive measurement campaign conducted with our implementation. The resulting real‐world measurements from this campaign quantify the numerical effects of D2D functionality on the resultant system performance. Consequently, they shed light on the general applicability of LTE‐assisted WFD solutions and associated operational ranges.     

激光（laser）及其应用

本文概述了激光器的产生过程,以及它在激光通信、激光测量和激光在PCB生产中的应用前景。