Numerical simulation of the spatiotemporal evolution of a nanoparticle–plasma system

A one-dimensional nanodusty plasma was modeled by self-consistently coupling a plasma model with nanoparticle growth, charging, and transport models. As nanoparticles grow from subnanometer to tens of nm in diameter, the numerical results predict a rich spatiotemporal structure, including four distinct temporal phases: a charge-limited phase, a charge accumulation phase, an early ion drag phase, and a sheath interaction phase.     

A cellular automaton technique for modelling of a binary dendritic growth with convection

A two-dimensional model for the simulation of a binary dendritic growth with convection has been developed in order to investigate the effects of convection on dendritic morphologies. The model is based on a cellular automaton (CA) technique for the calculation of the evolution of solid/liquid (s/l) interface. The dynamics of the interface controlled by temperature, solute diffusion and Gibbs–Thomson effects, is coupled with the continuum model for energy, solute and momentum transfer with liquid convection. The solid fraction is calculated by a governing equation, instead of some approximate methods such as lever rule method [A. Jacot, M. Rappaz, Acta Mater. 50 (2002) 1909–1926.] or interface velocity method [L. Nastac, Acta Mater. 47 (1999) 4253; L. Beltran-Sanchez, D.M. Stefanescu, Mat. and Mat. Trans. A 26 (2003) 367.]. For the dendritic growth without convection, mesh independency of simulation results is achieved. The simulated steady-state tip velocity are compared with the predicted values of LGK theory [Lipton, M.E. Glicksmanm, W. Kurz, Metall. Trans. 18(A) (1987) 341.] as a function of melt undercooling, which shows good agreement. The growth of dendrite arms in a forced convection has been investigated. It was found that the dendritic growth in the upstream direction was amplified, due to larger solute gradient in the liquid ahead of the s/l interface caused by melt convection. In the isothermal environment, the calculated results under very fine mesh are in good agreement with the Oseen–Ivanstov solution for the concentration-driven growth in a forced flow.     

Optical and electric properties of Nb-doped anatase TiO2 single crystal

Nb-doped anatase TiO₂ single crystal has been grown by chemical vapour transport method. Raman spectra shows that the obtained crystal with Nb of 0.08 wt% has typical anatase structure. An absorption band was observed at around 2.2 eV, which seems to be due to the d-d transition in the conduction band. The electron paramagnetic resonance and electric resistivity measurements show that the doped niobium makes quite shallow donor level whose orbital is d_xy-like centered at the titanium position of anatase.     

Photoluminescence characteristics of ZnTiO3: Bi nanocrystals

The photoluminescence properties of the Bi³⁺ in sol-gel derived ZnTiO₃ nanocrystals have been investigated. An ultra-violet emission at 360 nm and a visible emission band at 506 nm have been observed, originating from two kinds of emission centers. The former is ascribed to the ³P₁-¹S₀ transition of Bi³⁺ and the latter to the recombination of the electrons with the photo-generated holes trapped in the zinc vacancies. In all cases the latter contribution is predominant.     

A technique to construct symmetric variable-stepsize linear multistep methods for second-order systems

Some previous works show that symmetric fixed- and variable-stepsize linear multistep methods for second-order systems which do not have any parasitic root in their first characteristic polynomial give rise to a slow error growth with time when integrating reversible systems. In this paper, we give a technique to construct variable-stepsize symmetric methods from their fixed-stepsize counterparts, in such a way that the former have the same order as the latter. The order and symmetry of the integrators obtained is proved independently of the order of the underlying fixed-stepsize integrators. As this technique looks for efficiency, we concentrate on explicit linear multistep methods, which just make one function evaluation per step, and we offer some numerical comparisons with other one-step adaptive methods which also show a good long-term behaviour.

     

硅表面上的纳米量子点的自组织生长

纳米半导体量子点以其所具有的新颖光电性质与输运特性正在受到人们普遍重视。作为制备高质量纳米量子点的工艺技术 ,自组织生长方法倍受材料物理学家的青睐。而如何制备尺寸大小与密度分布可控的纳米量子点更为人们所注目。因为这是关系到纳米量子点最终能否器件实用化的关键。文中以此为主线 ,着重介绍了各种 Si表面 ,如常规表面、氧化表面、台阶表面以及吸附表面上 ,不同纳米量子点的自组织生长及其形成机理 ,并展望了其未来发展前景     

具有生产性与福利性公共支出的随机内生增长模型

文章建立一个随机内生增长模型来阐明主要政策参数对经济增长与社会福利的影响.若对生产函数、效用函数、偏好及随机干扰作一些特殊的假设,我们证明了主要政策参数的均衡值能被模型参数唯一决定.进一步我们还得到了期望增长率与储蓄的清晰解.文章的最后,我们证明了政府支出直接影响个体决策者的决策:即提高经济增长率将减少福利;反之,增加福利将减少增长率.     

Amorphous chromium silicide formation in hydrogenated amorphous silicon

The interaction between thin films of hydrogenated amorphous silicon and sputter-deposited chromium has been studied. Following deposition of the chromium films at room temperature, the films were annealed over a range of times and temperatures below 350°C. It was found that an amorphous silicide was formed only a few nanometers thick with the square of thickness proportional to the annealing time. The activation energy for the process was 0.55±0.05 eV. The formation process of the silicide was very reproducible with the value of density derived from the thickness and Cr surface density being close to the value for crystalline CrSi₂ for all films formed at temperatures ≤300°C. The specific resistivity of the amorphous CrSi₂ was ≈600 μΩ·cm and independent of annealing temperature.     

化学束外延

本文介绍了化学束外延(CBE)的发明和发展,论述了CBE的原理和设备。文中还介绍了最近提出的一种生长机理。