Plastic deformation kinetics of electrodeposited Cu foil at low and intermediate homologous temperatures

The plastic deformation kinetics of electrodeposited (EP) Cu foil (grain size d=0.6 μm) were determined at 296–448 K and compared with those for vapor-deposited (VP) foil (d=0.5 μm) tested at 77–473 K. The apparent activation volume v=kT ∂ ln for both materials exhibited a minimum at ∼350 K, and at this temperature, there occurred a marked increase in the temperature dependence of the flow stress σ. The rate-controlling mechanism in both materials at T<373 K appears to be grain boundary shear induced by dislocation pileups at the grain boundaries. The results at T=373–473 K suggest that the dislocation pileups are relieved or prevented and that either cross slip or intersection of dislocations is rate controlling with stronger support for the latter. The determination of the rate-controlling mechanism at the higher temperatures is complicated by possible changes in defect structure due to thermal annealing, and therefore, the operative mechanism corresponds to a structure that may differ from the initial, as-deposited condition.     

The Surface Energy of MgO: Multiscale Reconstruction from Thermal Groove Geometry

The surface energy of MgO is determined using experimental data collected from equilibrated thermal grooves circumscribing island grains. Local equilibrium assumptions at each groove require that the Herring equations be satisfied at each data site, thereby yielding a large and overdetermined system of equations involving the surface energy . This inverse problem is then solved using a new technique that is statistical in nature and multiscale in implementation. The resulting discrete solution represents a statistically significant representation of the surface energy of MgO as a function of surface orientation. Comparisons to results derived from a more traditional approach, along with suggested further applications, are discussed.     

Effect of reflow and thermal aging on the microstructure and microhardness of Sn-3.7Ag-xBi solder alloys

This work investigates the effect of reflow and the thermal aging process on the microstructural evolution and microhardness of five types of Sn-Ag based lead-free solder alloys: Sn-3.7Ag, Sn-3.7Ag-1Bi, Sn-3.7Ag-2Bi, Sn-3.7Ag-3Bi, and Sn-3.7Ag-4Bi. The microhardness and microstructure of the solders for different cooling rates after reflow at 250°C and different thermal aging durations at 150°C for air-cooled samples have been studied. The effect of Bi is discussed based on the experimental results. It was found that the microhardness increases with increasing Bi addition to Sn-3.7Ag solder regardless of reflow or thermal aging process. Scanning electron microscopy images show the formation of Ag₃Sn particles, Sn-rich phases, and precipitation of Bi-rich phases in different solders. The increase of microhardness with Bi addition is due to the solution strengthening and precipitation strengthening provided by Bi in the solder. The trend of decrease in microhardness with increasing duration of thermal aging was observed.     

非晶态超微粒子镍合金催化剂的研究 Ⅰ．Ni－B合金的制备及表征

非晶态超微粒子，镍基合金，硼合金，合金催化剂，表征     

Air-exposure effect on the resistivity of thin bismuth films

A survey of previous studies on vacuum deposited metal films shows that in high frequency measurements, explicit reference to the effect of air-exposure is not made. The present work on bismuth films (in-situ and air-exposed) at dc and rf frequencies, carried out mainly to study the air-exposure effect, shows that in-situ dc and rf and exposed rf all show nearly the same resistivity for thick continuous films. But air-exposed dc film resistances, when compared to in-situ dc resistances, show that the grain boundary reflection coefficient, R _gin Mayadas-Shatzkes model changes from 0·2 to 0·6. This is shown to be due to the grain boundary oxidation. The result is substantiated by rf measurements.     

Dependence of electrical properties of polycrystalline cvd si films on grain size and impurity doping concentrationa,b

The electrical properties of sets of simultaneously grown p-type polycrystalline Si films, deposited by SiH₄ pyrolysis on polycrystalline high-purity alumina substrates and B-doped during growth, were determined by Hall-effect measurements in the temperature range 77-420K as functions both of impurity doping concentration N (~10^l5 to ~10²⁰cm⁻³) and average grain size (≈1 to ≈125μm) in the film. Room temperature data showed rapidly increasing resistivities and rapidly decreasing free-carrier concentrations for doping below a critical concentration N_m and distinct mobility minima at that concentration, with the value of N_m being larger the smaller the average grain size. Measurements as a function of sample temperature showed the intergrain barrier height E_b, decreasing from a maximum value of ~0.4eV at the critical concentration to very small values (~0.01eV) for concentrations above 10¹⁹cm⁻³, with a functional dependence close to E_b ∝l/N^1/2 and E_b for any given concentration being larger the smaller the average grain size. Results are interpreted in terms of the grain-boundary trapping model. Trapped carrier densities in the grain boundaries were calculated to range from ~5×l0¹¹cm⁻² at N≈N_m to ~5×l0¹²cm⁻² for N>10¹⁹cm⁻³, the density being higher the smaller the grain size, and evidence was found for an energy distribution of traps in the Si bandgap, rather than a fixed density at a single discrete energy level. The observed relationship between N_m and average grain size nearly coincides with that of the model for films with ~lμm grain size but sharply departs from it for larger grain sizes, indicating probable applicability of the model for grain sizes up to that range. ^aThis work was supported by the U.S. Department of Energythrough its San Francisco Operations Office under Contract DE-AC03-79ET23045 and monitored by the Solar Energy Research Institute, Golden, CO. bThese results were first described at the 22nd Electronic Materials Conference, Ithaca, NY, June 21–27, 1980, Paper No. M4.     

On isoperimetric problems for domains with partly known boundaries

In the present paper, we discuss the isoperimetric problems for domains with partly known boundaries, i.e., the problem of determining a domain that minimizes the capacity functional in the class of plain double-connected domains having the same fixed area and outer boundary. The formulas for capacity variations obtained in this paper allows us to formulate necessary conditions.It is proved that the convexity of the fixed outer boundary implies the convexity of the inner boundary corresponding to an optimal domain. Then, we discuss the case where the fixed part of the boundary is a square.Further, we consider similar problems with more complicated functionals. We introduce the concept of a minimal function in the class of equimeasurable functions. This concept allows us to unify the approach to all of these problems. At the end, we produce a hypothesis that, if proved, would enable us to characterize the shape of the optimal domains in the isoperimetric problems mentioned above.The author wishes to express his appreciation to Dr. K. A. Lurie for his help and unceasing attention.     

Microchemical and Microstructural Characterization of the Early Stages of the Discontinuous Precipitation Reaction in Al-22 at.% Zn Alloy

High-spatial energy dispersive X-ray (EDX) microanalysis has been applied in order to reveal changes of chemical composition accompanying the formation of the lamellar structure due to discontinuous precipitation reaction in Al-22at.% Zn alloy. The line-scans performed in the reaction zone have shown that the region left behind the grain boundary (GB) after its displacement from the original position is solute depleted, similar to the de-alloying case of diffusion induced grain boundary migration. This enables the allotriomorphs to be transformed into solute-rich lamellae and development of lamellar + structure, especially if the GB moves in the direction perpendicular to its original location. If the direction of movement is strongly inclined to the original location of the GB, the growth usually stops after a short period of time, mainly due to formation of the precipitation free zone (PFZ) ahead of the reaction front. The detailed EDX examination revealed that there is a sharp change in solute content at the lamella/PFZ and PFZ/matrix alloy interfaces. The solute content in the PFZ is lower than in the neighbouring lamella and it corresponds to the equilibrium state. Therefore, one can suppose that the PFZ is formed due to backward movement of the reaction front in order to consume the excess of solute atoms stored in the lamellae in comparison with the equilibrium state. As soon as the equilibrium state is attained within the PFZ, the growth of the colony is completed.     

Diffusion Along Migrating Grain Boundaries

The paper summarizes recent experiments on diffusion at migrating grain boundaries (GBs) occurring during discontinuous reactions, like discontinuous precipitation (DP) and diffusion induced grain boundary migration. Analytical electron microscopy was used for measurements of the solute concentration across individual solute-depleted lamellae. These data combined with information on the growth velocity and the thickness of an individual lamella allowed the determination of the local values of the diffusivities of the moving reaction front of the DP cell in Al–Zn, Ni–Sn, Cu–In and Co–Al alloys. The obtained diffusivities and activation energies are very similar to the relevant parameters of stationary GBs. This allows us to conclude that there is no significant difference in the rates of diffusion along migrating and stationary GBs in the systems investigated. It is therefore believed that the diffusivity values of the moving reaction front of the DP reaction can be a source of reliable information on interfacial diffusion characteristics, especially in systems and/or at temperatures where radiotracer data are not readily available.     

Correlation of Grain Boundary Character with Wetting Behavior

Wetting of 975 grain boundaries (GB's) by liquid Cu in an iron-based alloy has been studied as a function of the five macroscopic degrees of freedom (DoF's) of grain boundary character. In addition, models of GB energy in terms of all five DoF's, and of anisotropic solid-liquid interfacial energy have been developed. The experimentally observed wetting behavior is interpreted in terms of the model, and it is shown that reasonable overall agreement is obtained between experimental results and model predictions.