Two-dimensional complete rational analysis of functionally graded beams within symplectic framework

Exact solutions for generally supported functionally graded plane beams are given within the framework of symplectic elasticity. The Young’s modulus is assumed to exponentially vary along the longitudinal direction while the Poisson’s ratio remains constant. The state equation with a shift-Hamiltonian operator matrix has been established in the previous work, which is limited to the Saint-Venant solution. Here, a complete rational analysis of the displacement and stress distributions in the beam is presented by exploring the eigensolutions that are usually covered up by the Saint-Venant principle. These solutions play a significant role in the local behavior of materials that is usually ignored in the conventional elasticity methods but possibly crucial to the material/structure failures. The analysis makes full use of the symplectic orthogonality of the eigensolutions. Two illustrative examples are presented to compare the displacement and stress results with those for homogenous materials, demonstrating the effects of material inhomogeneity.     

Band Alignment for Ambipolar-Doping of Sn_xZn_(1-x) Te Alloys

Using the first-principles band-structure method and a special quasirandom structure(SQS) approach,we have systematically calculated the alloy bowing coefficients and the nature band offsets of SnxZn1-x Te alloys.We show that the bowing coefficients and band gaps of these alloys are sensitively composition dependent.Due to wave functions full overlapping and delocalization of the Sn outermost p orbits and Zn s orbits,the coupling between these states is very strong,resulting in a significant downshift of conduction band edge with the increase of the Sn concentration x,While the valence band edge keeps almost unchanged compared with that of the binary ZnTe,thus improving the possibility for ambipolar-doping.     

基于压缩感知的地雷散射结构提取

利用目标信号的先验稀疏性,通过压缩感知(Compressive Sensing, CS)算法可以实现对目标的稀疏成像,获取其空间散射结构。该文将CS理论应用于车载前视步进频率超宽带探地雷达(Vehicle-mounted Stepped-frequency Forward-looking Ground Penetrating Virtual Aperture Radar, SFGPVAR)系统,通过建立电磁散射模型,指出金属地雷目标可近似为旋转不变的对称圆柱体,在对电磁仿真和实测数据分析的基础上,得到超宽带SFGPVAR系统中金属地雷具有孤立的双散射点结构,双点间距与雷达入射角等因素无关,且只与地雷的物理尺寸相关,使得在成像空间满足稀疏分布条件,因此利用CS算法可以实现地雷空间散射结构的提取。该文最后通过对SFGPVAR系统实测数据处理验证了CS算法提取地雷散射结构的可行性以及地雷双散射点结构特征的稳健性,该方法不仅拓展了地雷目标特征提取的新思路,也为具有简单离散散射结构目标的检测鉴别探索出一条新路。      

Interfacial properties of black phosphorus/transition metal carbide van der Waals heterostructures

Owing to its outstanding electronic properties, black phosphorus (BP) is considered as a promising material for next-generation optoelectronic devices. In this work, devices based on BP/MXene (Zr_n+1C _n T₂, T = O, F, OH, n = 1, 2) van der Waals (vdW) heterostructures are designed via first-principles calculations. Zr_n+1C _n T₂ compositions with appropriate work functions lead to the formation of Ohmic contact with BP in the vertical direction. Low Schottky barriers are found along the lateral direction in BP/Zr₂CF₂, BP/Zr₂CO₂H₂, BP/Zr₃C₂F₂, and BP/Zr₃C₂O₂H₂ bilayers, and BP/Zr₃C₂O₂ even exhibits Ohmic contact behavior. BP/Zr₂CO₂ is a semiconducting heterostructure with type-II band alignment, which facilitates the separation of electron-hole pairs. The band structure of BP/Zr₂CO₂ can be effectively tuned via a perpendicular electric field, and BP is predicted to undergo a transition from donor to acceptor at a 0.4 V/Å electric field. The versatile electronic properties of the BP/MXene heterostructures examined in this work highlight their promising potential for applications in electronics.     

Alkali-metal-induced topological nodal line semimetalin layered XN2 (X= Cr,Mo, W)

Based on first principles calculations and the K·p effective model, we propose that alkali metal deposition on the surface of hexagonal XN₂ (X= Cr, Mo, W) nanosheets induces topologically nontrivial phases in these systems. When spin orbit coupling (SOC) is disregarded, the electron-like conduction band from N-p_z orbitals can be considered to cross the hole-like valence band from X-d²_z orbitals, thereby giving rise to a topological nodal line state in lithium-functionalized XN₂ sheets (Li₂MoN₂ and Li₂WN₂). Such band crossing is protected by the existence of mirror reflection and time reversal symmetry. More interestingly, the bands cross exactly at the Fermi level, and the linear dispersion regions of such band crossings extend to as high as 0.9 eV above the crossing. For Li₂CrN₂, the results reveal the emergence of a Dirac cone at the Fermi level. Our calculations show that lattice compression decreases the thickness of a Li₂CrN₂ nanosheet, leading to phase transition to a nodal line semimetal. The evolution of the band gap of Li₂XN₂ at the Γ point indicates that the nontrivial topological character of Li₂XN₂ nanolayers is stable over a large strain range. When SOC is included, the band crossing point is gapped out giving rise to quantum spin Hall states in Li₂CrN₂ nanosheets, while for Li₂MoN₂, the SOC-induced gap at the crossing points is negligible.     

Coupled polaritonic band gaps in the anisotropic piezoelectric superlattices

Anisotropic piezoelectric superlattices (APSs) with the periodic arrangement of polarized anisotropic piezoelectric domains in a certain direction are presented, in which the coupled polaritonic band gaps (CPBGs) can be obtained in the whole Brillouin Zone and the maximum relative bandwidth (band-gap sizes divided by their midgap frequencies) of $5.1\text{\%}$ can be achieved. The general characteristics of the APSs are similar to those of the phononic crystals composed of two types of materials, with the main difference being the formation mechanism of the CPBGs, which originate from the couplings between lattice vibrations along two different directions and electromagnetic waves rather than from the periodical modulation of density and elastic constants. In addition, there are no lattice mismatches because the APSs are made of the same material. Thus, the APSs can also be extended to the construction of novel acousto-optic devices.     

C-Nb共掺杂SnO_2电子结构的第一性原理研究

本文利用第一性原理研究了C-Nb共掺杂的SnO_2稳定性、能带结构与态密度,从自旋向上和自旋向下的能带结构以及态密度分析了掺杂体系磁性产生的机理.研究结果表明,C-Nb共掺杂SnO_2体系的稳定性强于C,Nb单掺杂SnO_2体系;C,Nb单掺杂、C-Nb共掺杂的SnO_2体系的总磁矩分别为0μB、0.922μB、1.0μB;Nb掺杂SnO_2体系产生磁性在于Nb的d轨道引入,C-Nb共掺杂SnO_2体系产生磁性在于Nb的s轨道和C的p轨道相互作用.     

Nb-X(X=Y,Zr)共掺杂SnO_2电子结构的第一性原理研究

本文采用第一性原理方法研究了Nb-X(X=Y,Zr)共掺杂SnO_2能带结构与态密度,探讨了其磁性产生的机理.研究结果表明,Nb-Y共掺杂SnO_2体系自旋向上和自旋向下的能带、态密度完全对称,总磁矩为0μB;Nb-Zr共掺杂的SnO_2体系自旋向上和自旋向下的能带与态密度在费米能级处都出现了不对称的情况,出现耦合现象,其总磁矩为0.933μB;分析Nb-Y共掺杂SnO_2的能带结构与态密度得到自旋向上和自旋向下的能带禁带中的4条杂质能级来源于Nb-Y共掺杂SnO_2电子的施主与受主能级;NbZr共掺杂SnO_2体系产生磁性的原因在于Nb和Zr的d轨道的引入.     

匹配滤波和去斜率脉压方法性能分析与比较

匹配滤波与去斜率脉压是宽带成像雷达常用的两种处理方法,理论上具有同样的距离分辨率,但在实际应用中由于调频非线性、幅相失真和混频器噪声等非理想因素的影响,两者性能存在差异。本文首先介绍了两种方法的原理,提出了对非理想因素导致的系统失真进行周期性分量和非周期性分量的分解方法,仿真结果表明匹配滤波方法在旁瓣抑制、距离分辨率和信噪比等性能上都优于去斜率脉压方法,通过数字滤波对幅相失真进行补偿后,可进一步提高匹配滤波脉压方法的性能,最后通过实测数据验证了分析方法及结论的正确性。本文结论可用于指导宽带成像雷达系统设计。