Strain glass behaviour of Ni–Co–Mn–Sn ferromagnetic shape memory alloys

We report the direct experimental observations of the glassy behaviour in Ni–Co–Mn–Sn ferromagnetic shape memory alloys by doping sufficient substitutional point defect Co into the Ni sites (9 at%). The results showed that high level of Co doping had caused the complete suppression of the martensitic transformation and introduction of a strain glass transition in Ni–Co–Mn–Sn alloys. The strain glass transition was definitively characterized by the dynamic mechanical anomalies following the Vogel–Fulcher relationship and the signature nonergodicity of the frozen glass using a zero‐field‐cooled/field‐cooled heating measurement of static strain. The findings clarified the cause of vanishing of the martensitic transformation in Ni–Co–Mn–Sn alloy with high Co doping levels and the generality of glassy state in Ni–Mn based ferromagnetic shape memory alloys with high level of foreign elements doping. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim)     

高功率氙灯脉冲放电过程中石英管壁热损伤机理

基于高功率激光装置对脉冲氙灯工程运行可靠性的要求,利用现有的能源模块开展了氙灯放电考核实验。实验结果表明：虽然氙灯运行在安全的能量负载水平,当能源模块单个放电回路的峰值功率超过300 MW时,氙灯石英玻璃管壁存在热损伤风险。肉眼观察到管壁损伤后在反射器对侧的灯管内壁出现乳白色沉积层。经扫描电镜和X射线光电子能谱测试分析,证实热损伤形成的乳白色沉积物为二氧化硅。为探究管壁热损伤机制,采用高速摄影观测了氙灯放电等离子体沟道发展过程。图像显示放大器内金属反射器的几何形状对放电沟道的分布产生了显著影响,尤其是在侧灯箱,灯内电弧沟道会靠近反射器一侧集中分布,因此,导致等离子体对灯管的偏烧。当放电峰值功率超过石英热负载极限时,管壁表面二氧化硅材料会被烧蚀至蒸发、气化,并随后沉积在灯管较冷部位。研究结果表明放电回路的放电峰值功率过高、放大器内金属反射器均会对氙灯造成热损伤。     

A robust parameter design for multi-response problems

Most real world search and optimization problems naturally involve multiple responses. In this paper we investigate a multiple response problem within desirability function framework and try to determine values of input variables that achieve a target value for each response through three meta-heuristic algorithms such as genetic algorithm (GA), simulated annealing (SA) and tabu search (TS). Each algorithm has some parameters that need to be accurately calibrated to ensure the best performance. For this purpose, a robust calibration is applied to the parameters by means of Taguchi method. The computational results of these three algorithms are compared against each others. The superior performance of SA over TS and TS over GA is inferred from the obtained results in various situations.     

高掺杂碲基EDFA增益噪声特性的数值模拟

采用四能级理论模型对高掺杂碲基EDFA进行了数值模拟,得出C波段和L波段EDFA的主要增益和噪声系数特性,C+L波段同时放大时,20 dB增益带宽达到85 nm.同时分析了铒离子高掺杂带来的上转换效应对放大增益和噪声性能的影响程度,C波段为4％,L波段为10％,当增大泵浦光功率时,影响程度会更小,采用两段级双向泵浦结构放大时影响仅为0.1％.     

The ground state energy of the Edwards-Anderson spin glass model with a parallel tempering Monte Carlo algorithm

We study the efficiency of parallel tempering Monte Carlo technique for calculating true ground states of the Edwards-Anderson spin glass model. Bimodal and Gaussian bond distributions were considered in two- and three-dimensional lattices. By a systematic analysis we find a simple formula to estimate the values of the parameters needed in the algorithm to find the GS with a fixed average probability. We also study the performance of the algorithm for single samples, quantifying the difference between samples where the GS is hard, or easy, to find. The GS energies we obtain are in good agreement with the values found in the literature. Our results show that the performance of the parallel tempering technique is comparable to more powerful heuristics developed to find the ground state of Ising spin glass systems.     

The synthesis and exchange bias effect of monodisperse NiO nanocrystals

Monodisperse NiO nanocrystals with an average particle size of 3 ± 0.4 nm are successfully synthesized by the thermal decomposition of Ni-oleylamine complex in an organic solvent under a continuous O2 flux. The crystalline structure and the morphology of the product are investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and transmission electron microscopy. Magnetization and alternating-current (ac) susceptibility measurements indicate that the structure of the particles can be considered as consisting of an antiferromagnetically ordered core and a spin-glass-like surface shell. In addition, both the exchange bias field and the vertical magnetization shift can be observed in this system at 10 K after field cooling. This observed exchange bias effect is explained in terms of the exchange interaction between the antiferromagnetic core and the spin-glass-like shell.     

磷（P31^＋）注入Si的快速退火电特性

本文报告了P_(31)~+离子注入Si中快速退火的电特性研究结果。采用高精度四探针测量了P_(31)~+注入层在不同注入剂量下,薄层电阻与退火温度和退火时间的关系。采用自动电化学测量仪PN-4200,测量了P_(31)~+离子注入Si中的载流子剖面分布。     

Effect of Annealing Ambient on the Self-Formation Mechanism of Diffusion Barrier Layers Used in Cu(Ti) Interconnects

Copper (titanium) [Cu(Ti)] films with low titanium (Ti) concentration were found to form thin Ti-rich barrier layers at the film/substrate interfaces after annealing, which is referred to as self-formation of the barrier layers. This Cu(Ti) alloy was one of the best candidates for interconnect materials used in next-generation ultra-large-scale integrated (ULSI) devices that require both very thin barrier layers and low-resistance interconnects. In the present paper, in order to investigate the influences of annealing ambient on resistivity and microstructure of the Cu alloys, the Cu(7.3at.%Ti) films were prepared on the SiO₂ substrates and annealed at 500°C in ultra-high vacuum (UHV) or argon (Ar) with a small amount of impurity oxygen. After annealing the film at 500°C in UHV, the resistivity was not reduced below 16 μΩ-cm. Intermetallic compounds of Cu₄Ti were observed to form in the films and believed to cause the high resistivity. However, after subsequently annealing in Ar, these compounds were found to decompose to form surface TiO _x and interfacial barrier layers, and the resistivity was reduced to 3.0 μΩ-cm. The present experiment suggested that oxygen reactive to titanium during annealing played an important role for both self-formation of the interfacial barrier layers and reduction of the interconnect resistivity.     

Passivation of Surface and Interface States in AlGaN/GaN HEMT Structures by Annealing

The Ni/AlGaN interfaces in AlGaN/GaN Schottky diodes were investigated to explore the physical origin of post-annealing effects using electron beam induced current (EBIC), current–voltage (I–V) characteristics, and X-ray photoelectron spectroscopy (XPS). The EBIC images of the annealed diodes showed that the post-annealing process reduces electrically active states at the Schottky metal/AlGaN interfaces, leading to improvement of diode performance, for example a decrease in reverse leakage current and an increase in Schottky barrier heights. Pulsed I–V characteristics indicate the Fermi level is up-shifted after annealing, resulting in a larger sheet carrier density at the AlGaN/GaN interface. Unintentional oxidation of the free AlGaN surface during the post-annealing process, revealed by XPS analysis, may prevent electron trapping near the drain-side of the gate edges. We suggest that the post-annealing process under an optimized conditions can be an effective way of passivating AlGaN/GaN heterojunction field-effect transistors.