Use of solid electrolyte GeSe-GeI<Subscript>2</Subscript> for electrochemical doping with germanium

Lead tellurite is study to show that solid electrolyte GeSe-GeI₂, which has the optimum composition and contains 5 mol % of GeI₂, can in principle be used for electrochemical doping of semiconducting materials with germanium by the coulometric titration method. Some parameters of the coulometric titration are considered. The doping efficiency is monitored by determining variations in the concentration of charge carriers using the Hall method and by measuring the EMF of corresponding galvanic cells.     

电感耦合等离子体质谱法测定煤矸石中微量锗和镓

建立了测定煤矸石中微量锗和镓的电感耦合等离子体质谱法。煤矸石试样经高温灰化,用硝酸-氢氟酸-高氯酸-磷酸分解,以电感耦合等离子体质谱法测定其中的锗和镓。通过在线三通加入内标元素铑,消除非质谱干扰;通过选择干扰元素的异质同位素进行定量测定,采用数学公式在线校正,消除质谱干扰。与分光光度法进行比对,锗、镓测定结果的相对偏差为-0.63%~0.28%。克服了常规化学分析方法步骤繁琐、耗时长、工作量大的不足。该法测定结果的相对标准偏差小于3%(n=6),加标回收率为97.4%~102.5%。该方法具有检出限低、快速、简便、线性范围宽、多元素同时测定等优点,分析误差满足化学分析法的要求,可用于煤矸石中锗和镓的测定。     

Electrolytic Formation of Crystalline Silicon/Germanium Alloy Nanotubes and Hollow Particles with Enhanced Lithium‐Storage Properties

Crystalline silicon(Si)/germanium(Ge) alloy nanotubes and hollow particles are synthesized for the first time through a one‐pot electrolytic process. The morphology of these alloy structures can be easily tailored from nanotubes to hollow particles by varying the overpotential during the electro‐reduction reaction. The continuous solid diffusion governed by the nanoscale Kirkendall effect results in the formation of inner void in the alloy particles. Benefitting from the compositional and structural advantages, these SiGe alloy nanotubes exhibit much enhanced lithium‐storage performance compared with the individual solid Si and Ge nanowires as the anode material for lithium‐ion batteries.     

掺锗提高VO2薄膜的相变温度机理研究

二氧化钒(VO₂)作为一种长久以来备受关注的新型可逆相变材料,发展潜力巨大,其相变温度(T_MIT)的调控一直是研究热点。本文主要利用锗离子作为掺杂离子探索其对VO₂薄膜T_MIT的影响,并尝试解释其内部作用机理。在约1 cm²大小抛光的氧化铝薄片上沉积了一系列含不同比例锗离子VO₂薄膜。研究发现锗离子作为掺杂离子确实有利于T_MIT的提高(本课题T_MIT最大可达84.7 ℃)。T_MIT提高的主要原因是锗离子的引入能够强化单斜态V-V二聚体的稳定性,进而增强单斜态的稳定性,使得低温单斜态向四方金红石态转变更加困难。     

Synthesis of a Nine-atom Germanium Cluster K_(0.5)[K(18-crown-6)]_(1.5)Ge_9·1.5en with Unprecedented “up” and “down” Chain Arrangement of Unit [-(Ge_9-K-Ge_9)~(3-)-]

A new complex K0.5[K(18-crown-6)]1.5Ge9·1.5en(1) which contains unprecedented "up" and "down" chain arrangement of unit [-(Ge-9-K-Ge9)3-] has been prepared by the reaction of K4Ge9 with HgS in ethylenediamine(en) in the presence of 18-crown-6(1,4,7,10,13,16-hexaoxacyclooctadecane), and characterized by X-ray structure analysis. The color of the title crystals(black), which is darker than that of the reported three compounds with chains of germanium clusters, may result from the naked K+ and their interactions with the chain. And the structure differences between 1 and the reported three compounds with chains of germanium have also been discussed.     

不同直径张应变锗材料对光谱和晶体质量的影响

绝缘体上张应变锗材料是通过能带工程提高锗材料光电性能得到的一种新型半导体材料,在微电子和光电子领域具有重要的应用前景.采用微电子技术中的图形加工方法以及利用锗浓缩的技术原理,在绝缘体上硅(SOI)材料上制备了绝缘体上张应变锗材料.喇曼与室温光致发光(PL)测试结果表明,不同圆形半径的绝缘体上锗材料张应变均为0.54％.对于绝缘体上张应变锗材料,应变使其发光红移的效果强于量子阱使其发生蓝移的效果,总体将使绝缘体上张应变锗材料的直接带发光峰位红移.同时0.54％张应变锗材料的直接带发光强度随着圆形半径的增大而减弱,这主要是因为圆形半径大的样品其晶体质量较差.该材料可进一步用于制备锗微电子和光电子器件.     

Ge在Ru(0001)表面上生长及其性质研究

报道Ge在Ru(0001)表面上生长以及相互作用行为的扫描隧道显微镜（STM）和x射线光电子能谱（XPS）研究. STM的实验结果表明Ge在Ru(0001)表面的生长呈典型的Stranski_Krastanov生长模式，Ge的覆盖度小于单原子层时呈层状生长，而从第二层开始呈岛状生长. XPS测量显示衬底Ru(0001)与Ge的相互作用很弱. Ru(0001)表面的Ru 3d5/2和Ru 3d3/2芯态结合能分别处于2798和2840 eV. 随着Ge的生长，到Ge层的厚度为20个单原子层，衬底Ru 3d芯态结合能减小了约02 eV，而Ge 3d芯态结合能从Ge低覆盖度时的289 eV增加到了290 eV，其相对位移约为01 eV. 关键词： Ge Ru表面 生长 相互作用     

基于非晶锗热电阻的柔性MEMS流速传感器的设计与仿真

针对铂等常用金属热敏材料电阻温度系数(TCR)不高,导致热式MEMS流速传感器宽量程测量时功耗高的问题,设计了 一种基于非晶锗(a-Ge)薄膜热电阻的低功耗、宽量程柔性MEMS流速传感器.非晶锗热电阻材料具有较高的TCR系数(约为-0.02/K)和室温电阻率(5Ω·m),传感器在较低的工作温差和功耗下可获得宽量程的流速测量.阐述了该柔性MEMS流速传感器的设计结构、工作原理、3D有限元建模和热-流场仿真结果.利用聚酰亚胺衬底空腔膜上的四个非晶锗热电阻同时作为自加热热源和测温元件.四个非晶锗热电阻组成一个惠斯通电桥,同时结合热损失和热温差原理来实现宽量程流速测量和测向.仿真结果表明,惠斯通电桥采用恒电流供电只需120μA,使得非晶锗热阻的工作温度与环境温度之间的温差不高于6 K,就可对0～50 m/s范围内的流速进行测量,且功耗在1.368 mW以内.该柔性流速传感器易于采用MEMS技术批量制造,可贴于曲面应用,非常适于物联网等低功耗流速传感领域.