Growth of Ga x In1−x As y P1−y using ethyldimethylindium andt-butylphophine

The growth of GaInAsP lattice matched to GaAs using tertiary-butylphosphine and ethyldimethylindium to replace the more conventional phosphine and trimethylindium is described. The quaternary compound lattice matched to GaAs has received far less attention than related compositions that lattice match InP. Using the new sources, most of the growth problems experienced by previous workers have been avoided. Uniform compositions have been grown reproducibly without evidence of gas-phase, adduct-forming reactions. Bothn- andp-type films have been grown. Heteroepitaxy of high quality GalnAsP layers on Ge has also been achieved, and microstructural results are presented.     

SiGe: An attractive material for post-CMOS processing of MEMS

This work gives an overview of the different developments for silicon germanium (Si_1−xGe_x) from a MEMS post-processing perspective. First, the maximum processing temperature that does not introduce any damage or degradation into the standard characteristics of the CMOS driving electronics is specified. Then, the optimal type of silicon and germanium gas sources and deposition technique that results in an economical process are identified. Next, the selection criteria for a low thermal budget doping method and doping species are discussed. Finally, the advantage and disadvantage for the different approaches implemented for enhancing the physical properties of poly Si_1−xGe_x at a CMOS backend compatible temperature are highlighted. It is shown that the optimal method depends on the application requirements and the CMOS technology used for realizing the driving electronics.     

自加热非晶锗热电阻MEMS流速传感器的制造与测试

为扩大流速传感器的测量范围并降低功耗,制造并测试了一种基于自加热非晶锗薄膜热电阻的MEMS流速传感器,它是由嵌入氮化硅薄膜的四个非晶锗热敏电阻和一对环境测温补偿电阻组成。四个非晶锗热电阻同时作为自加热热源和测温元件,相互连接以形成惠斯通电桥。给出了MEMS工艺流程,微加工制造了尺寸为8.9 mm×5.6 mm×0.4 mm的流速传感器芯片。搭建了低流速和高流速气流通道实验装置,对传感器的惠斯通电桥施加50μA的恒定电流(CCA),实现了0～50 m/s范围内的流速测量。结果表明,传感器在低流速(0～2 m/s)时的灵敏度约为81.6 mV/(m/s),在高流速(2～50 m/s)时的灵敏度约为51.9 mV/(m/s),最大功耗仅约为1.03 mW。     

压缩X因子导数光谱法测定痕量锗

本采用压缩Ｘ因子导数光谱技术实现了宽峰体系灵敏度的大幅度提高，提出了测定痕量锗的方法。在０．７２ｍｏｌ／ＬＨ２ＳＯ４和３．０ｍｏｌ／ＬＨ３ＰＯ４的混酸介质中，锗－水杨基荧光酮－ＯＰ三元显色体系的压缩Ｘ因子四阶导数光谱摩尔响应系数达１．８９×１０＾６Ｌ．ｍｏｌ＾－１．ｃｍ＾－１，灵敏度比常规光度法高１２．４倍；最低检测出限为０．０００３３ｍｇ／Ｌ，比常规光谱法低４倍；选择性也进一步提高，绝大多数离     

Hydrogen-Related Paramagnetic Centers in Ge-Doped Sol-Gel Silica Induced by γ-Ray Irradiation

We have studied the generation mechanisms of H(II) paramagnetic centers in Ge-doped silica by investigating up to 10⁴ mol ppm sol-gel Ge-doped silica materials. We have considered materials with the same concentrations of Ge but that are produced by two different densification routes that give rise to different concentrations of Ge-related oxygen deficient centers (GeODC(II)). These centers are characterized by an optical absorption band at ∼5.2 eV (B_2β band) and two related emissions at ∼3.2 eV and ∼4.3 eV. The GeODC(II) content was estimated by absorption and emission measurements. The H(II) centers were induced by room temperature γ-ray irradiation and their concentration was determined by electron paramagnetic resonance measurements. The comparison between the two kinds of materials, obtained by different preparations, shows that the GeODC(II) concentration increases with the Ge content and is enhanced by vacuum densification. The comparison of irradiated samples shows that beyond the already known process of conversion of preexisting GeODC(II) into H(II) centers, another generation process of H(II) centers is effective that involves irradiation induced GeODC(II).     

锗元素测定方法综述

锗在国防工业、航空航天和通信等领域中的战略性,锗含量的测定对于保证材料质量和满足国际标准至关重要。本文综述了锗含量测定方法的多种技术,包括分光光度法、原子荧光光谱法、原子吸收光谱法、电感耦合等离子体原子发射光谱法、电感耦合等离子体质谱法以及滴定法。在每个检测方法的介绍中,详细探讨了方法的原理、前处理步骤以及应用范围,并分别总结了各个方法的优势和不足。最后,强调了锗含量测定方法的意义,特别是在满足出口监管和促进科学研究方面的作用。同时对锗元素的测定方法进行了展望,为未来的发展提供了参考方向。     

（英）离子束溅射法制备碳化锗薄膜的红外光学特性和力学特性

采用离子束溅射法通过在CH4和Ar 的混合气体中溅射Ge靶材制备碳化锗(Ge1-xCx)薄膜.分别通过原子力显微镜、拉曼光谱和X射线光电子能谱、傅里叶变换红外光谱以及纳米压痕测试研究了薄膜的表面形貌、化学结构、光学特性和力学特性.同时分析了制备薄膜时的离子源束压和薄膜性质之间的关系.结果表明,薄膜的粗糙度随束压的增大而减小.在较高束压下制备的薄膜含有较少的C元素和较多的Ge-C键.薄膜具有非常好的红外光学特性和力学特性.薄膜在较大波长范围内具有良好的透光性能.C元素含量随着束压的升高而降低,进而导致薄膜的折射率在束压从300 V增大到800 V的过程中逐渐升高.薄膜的硬度大于8 GPa.由于薄膜中的Ge-C键代替了C-C 键和C-Hn键,薄膜的硬度随束压的增加逐渐增加.     

不同直径张应变锗材料对光谱和晶体质量的影响

绝缘体上张应变锗材料是通过能带工程提高锗材料光电性能得到的一种新型半导体材料,在微电子和光电子领域具有重要的应用前景.采用微电子技术中的图形加工方法以及利用锗浓缩的技术原理,在绝缘体上硅(SOI)材料上制备了绝缘体上张应变锗材料.喇曼与室温光致发光(PL)测试结果表明,不同圆形半径的绝缘体上锗材料张应变均为0.54％.对于绝缘体上张应变锗材料,应变使其发光红移的效果强于量子阱使其发生蓝移的效果,总体将使绝缘体上张应变锗材料的直接带发光峰位红移.同时0.54％张应变锗材料的直接带发光强度随着圆形半径的增大而减弱,这主要是因为圆形半径大的样品其晶体质量较差.该材料可进一步用于制备锗微电子和光电子器件.     

The Conformation of Sterically Congested Seven-Membered Rings Containing Tetracoordinate Germanium(IV): A First X-Ray Crystallographic Structure Determination

The X-ray crystallographic analysis of 6,6-dimethyl-2,4,8,10-tetra-tert-octyl-dibenzo[d,f][1,3,2]dioxagermepin, 1 is reported. In the solid-state conformation of 1, the dihedral angle about the C─C sp²-sp ² σ bond connecting the two aryl rings is 50.1°. The observed C₂ symmetry in the solid-state conformation of 1 is consistent with the previously suggested solution conformation.     

Electrolytic Formation of Crystalline Silicon/Germanium Alloy Nanotubes and Hollow Particles with Enhanced Lithium‐Storage Properties

Crystalline silicon(Si)/germanium(Ge) alloy nanotubes and hollow particles are synthesized for the first time through a one‐pot electrolytic process. The morphology of these alloy structures can be easily tailored from nanotubes to hollow particles by varying the overpotential during the electro‐reduction reaction. The continuous solid diffusion governed by the nanoscale Kirkendall effect results in the formation of inner void in the alloy particles. Benefitting from the compositional and structural advantages, these SiGe alloy nanotubes exhibit much enhanced lithium‐storage performance compared with the individual solid Si and Ge nanowires as the anode material for lithium‐ion batteries.