Quantum logic gates with two-level trapped ions beyond Lamb--Dicke limit

In the system with two two-level ions confined in a linear trap, this paper presents a simple scheme to realize the quantum phase gate (QPG) and the swap gate beyond the Lamb--Dicke (LD) limit. These two-qubit quantum logic gates only involve the internal states of two trapped ions. The scheme does not use the vibrational mode as the data bus and only requires a single resonant interaction of the ions with the lasers. Neither the LD approximation nor the auxiliary atomic level is needed in the proposed scheme. Thus the scheme is simple and the interaction time is very short, which is important in view of decoherence. The experimental feasibility for achieving this scheme is also discussed.     

A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs

A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding- gate （JLDMCSG） metal-oxide-semiconductor field-effect transistors （MOSFETs） is proposed. It is derived by solving the two-dimensional Poisson＇s equation in two continuous cylindrical regions with any simplifying assumption. Using this analytical model, the subthreshold characteristics of JLDMCSG MOSFETs are investigated in terms of channel electro- static potential, horizontal electric field, and subthreshold current. Compared to junctionless single-material cylindrical surrounding-gate MOSFETs, JLDMCSG MOSFETs can effectively suppress short-channel effects and simultaneously im- prove carrier transport efficiency. It is found that the subthreshold current of JLDMCSG MOSFETs can be significantly reduced by adopting both a thin oxide and thin silicon channel. The accuracy of the analytical model is verified by its good agreement with the three-dimensional numerical simulator ISE TCAD.     

一个次氯酸根比色荧光探针及其逻辑行为（英文）

利用次氯酸根(ClO-)的氧化性质和Cu+与Cu2+不同的配位性质,一种高效的可用于探测ClO-的铜离子化合物CS1被合成出来。通过吸收和发射光谱系统地研究了CS1对ClO-的传感性能。结果表明,在Cu+存在条件下,CS1的光谱强烈受到OCl-影响:最大吸收峰从396 nm红移到545 nm(Δλ=149 nm);520nm处的荧光强度降低近25倍。以Cu+和ClO-为输入信号,以470 nm和396 nm吸收峰比值(A470/A396)为输出信号,构建了一个基于CS1的AND逻辑门,并且可以用乙二胺四乙酸二钠盐(EDTA)对其进行简单重置。     

Temporal Aberration of the Focused Inhomogeneous Wave from a Misalignment Parallel Grating Pair Compressor

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Mixed noise removal algorithm of EBAPS image under low illumination condition based on FPGA北大核心CSCD

In order to solve the problem that single median filtering and gaussian filtering algorithm is not effective in suppressing impulse noise and poisson noise simultaneously in low illumination image, and the edge detail protection is insufficient, an open and close mix-median-gaussian (OCMMG) filtering algorithm based on field programmable gate array (FPGA) was proposed. Firstly, the minimum four-direction difference was used to detect the anomaly degree of each pixel point, the weight was allocated according to the threshold of pulse noise discrimination, and the first step was filtering. Then, the four-direction edge detection algorithm was used to extract image edges, and the second step was filtered according to the set edge confidence characterization value. Finally, the images collected by electron bombarded active pixel sensor (EBAPS) under the condition of 1×10−3 lx illumination were processed by FPGA in real time. The experimental results show that the FPGA processing results are consistent with the software simulation processing results. Compared with the median filtering and gaussian filtering algorithm, the peak signal-to-noise ratio (PSNR) of the algorithm is improved by 3.23% and 16.34%, the structural similarity is improved by 14.66% and 33.86%, and the edge retention index is improved by 0.49% and 4.21%, respectively, which can effectively remove the mixed noise of EBAPS image and meet the real-time requirements. © 2022 Editorial office of Journal of Applied Optics. All rights reserved.     

Fast-switching SOI-LIGBT with compound dielectric buried layer and assistant-depletion trench

A lateral insulated gate bipolar transistor (LIGBT) based on silicon-on-insulator (SOI) structure is proposed and investigated. This device features a compound dielectric buried layer (CDBL) and an assistant-depletion trench (ADT). The CDBL is employed to introduce two high electric field peaks that optimize the electric field distributions and that, under the same breakdown voltage (BV) condition, allow the CDBL to acquire a drift region of shorter length and a smaller number of stored carriers. Reducing their numbers helps in fast-switching. Furthermore, the ADT contributes to the rapid extraction of the stored carriers from the drift region as well as the formation of an additional heat-flow channel. The simulation results show that the BV of the proposed LIGBT is increased by 113% compared with the conventional SOI LIGBT of the same length L_D. Contrastingly, the length of the drift region of the proposed device (11.2 μ) is about one third that of a traditional device (33 μ) with the same BV of 141 V. Therefore, the turn-off loss (E_OFF) of the CDBL SOI LIGBT is decreased by 88.7% compared with a conventional SOI LIGBT when the forward voltage drop (V_F) is 1.64 V. Moreover, the short-circuit failure time of the proposed device is 45% longer than that of the conventional SOI LIGBT. Therefor, the proposed CDBL SOI LIGBT exhibits a better V_F-E_OFF tradeoff and an improved short-circuit robustness.     

All optical NOR and NAND gate based on nonlinear photonic crystal ring resonators

In this paper we proposed optical NOR and NAND gates. By combining nonlinear Kerr effect with photonic crystal ring resonators first we designed a structure, whose optical behavior can be controlled via input power intensity. The switching power threshold obtained for this structure equal to 2 kW/μm². For designing the proposed optical logic gates we employed two resonant rings with the same structures, both rings at the logic gates were designed such that their resonant wavelength be at λ = 1550 nm. Every proposed logic gate has one bias and two logic input ports. We used plane wave expansion and finite difference time domain methods for analyzing the proposed structures.     

Realization of quantum gates by Lyapunov control

We propose a Lyapunov control design to achieve specific (or a family of) unitary time-evolution operators, i.e., quantum gates in the Schrödinger picture by tracking control. Two examples are presented. In the first, we illustrate how to realize the Hadamard gate in a single-qubit system, while in the second, the controlled-NOT (CNOT) gate is implemented in two-qubit systems with the Ising and Heisenberg interactions. Furthermore, we demonstrate that the control can drive the time-evolution operator into the local equivalence class of the CNOT gate and the operator keeps in this class forever with the existence of Ising coupling.     

PVA栅绝缘层浓度对P3HT有机场效应晶体管性能的影响

采用溶液制备法制备了用PVA作为绝缘层、P3HT作为有源层的有机场效应晶体管,,研究了不同浓度PVA栅绝缘层对器件性能的影响。实验结果显示,以质量分数为8%的PVA溶液制备的栅绝缘层具有最好的性能,器件的场效应迁移率为0.31 cm²·V^-1·s^-1,阈值电压为-6 V。进一步分析了PVA栅绝缘层浓度对器件性能提高的原因,结果表明,对于制备溶液化的有机场效应晶体管,选取合适的PVA栅绝缘层浓度非常重要。     

Improvement of breakdown characteristics of an A1GaN/GaN HEMT with a U-type gate foot for millimeter-wave power application

<正>In this study,the physics-based device simulation tool Silvaco ATLAS is used to characterize the electrical properties of an AlGaN/GaN high electron mobility transistor(HEMT) with a U-type gate foot.The U-gate AlGaN/GaN HEMT mainly features a gradually changed sidewall angle,which effectively mitigates the electric field in the channel, thus obtaining enhanced off-state breakdown characteristics.At the same time,only a small additional gate capacitance and decreased gate resistance ensure excellent RF characteristics for the U-gate device.U-gate AlGaN/GaN HEMTs are feasible through adjusting the etching conditions of an inductively coupled plasma system,without introducing any extra process steps.The simulation results are confirmed by experimental measurements.These features indicate that U-gate AlGaN/GaN HEMTs might be promising candidates for use in miltimeter-wave power applications.