Characteristics improvement of HfO2/Ge gate stack structure by fluorine treatment of germanium surface

Chemical reactivity of fluorine molecule (F₂)-germanium (Ge) surface and dissociation of fluorine (F)-Ge bonding have been simulated by semi-empirical molecular orbital method theoretically, which shows that F on Ge surface is more stable compared to hydrogen. Ge MIS (metal insulator semiconductor) capacitor has been fabricated by using F₂-treated Ge(1 0 0) substrate and HfO₂ film deposited by photo-assisted MOCVD. Interface state density observed as a hump in the C-V curve of HfO₂/Ge gate stack and its C-V hysteresis were decreased by F₂-treatment of Ge surface. XPS (X-ray photoelectron spectroscopy) depth profiling reveals that interfacial layer between HfO₂ and Ge is sub-oxide layer (GeO_x or HfGeO_x), which is believed to be origin of interface state density.F was incorporated into interfacial layer easily by using F₂-treated Ge substrate. These results suggest that interface defect of HfO₂/Ge gate stack structure could be passivated by F effectively.     

三维RC网络仿真异质材料的通用介质响应

提出了一种三维RC网络模型,并采用MATLAB及C语言对该模型进行编码、建模和仿真,得到了该网络的归一化复介电常数.分别计算了元件数为54,144,300,540和882的三维RC网络,结果表明,元件数为300及其以上的网络,其通用介质响应(UDR)特性趋于稳定;获得了电容分别为100nF,10nF,1nF和100pF时,540个元件RC网络的归一化复介电常数与频率关系的仿真结果;仿真了540个元件的RC网络中,电阻比例分别为4％,7％,10％,16％和33％时,归一化复介电常数与角频率ω的 关键词： 三维RC网络 异质材料 介电常数 通用介质响应     

基体电导率对0-3型铁电复合材料高压极化行为及损耗的影响

提出了一个0-3型聚合物基铁电复合材料的直流高压极化模型.模型中考虑了聚合物/铁电陶瓷界面处自由电荷的积聚及极化初始时刻的真实情况,利用拉普拉斯静电场方程,并结合边界条件,得到了直流高压极化过程中复合材料的极化强度、界面电流密度等随时间的演化方程,同时得到介电常数、介质损耗等物理特性的表达式.此外,实验制备了分别以环氧树脂E-44和铁电共聚物P(VDF-TrFE)为基体的两种0-3型铁电复合材料.从理论和实验两方面研究了基体电导率对极化行为以及介质损耗的影响.两方面结果均表明：随基体电导率增加,极化时间缩短,陶瓷相的极化强度及复合材料的整体电性能提高,但是漏电流及介质损耗增加.而且实验结果与直流高压极化模型的预测结果符合. 关键词： 铁电复合材料 电导率 极化 介质损耗     

Polyamide 11/Poly(vinylidene fluoride) Blends as Novel Flexible Materials for Capacitors

A novel capacitor with high dielectric constant (ε) has been developed by blending poly(vinylidene fluoride) (PVDF) with polyamide (PA11). The blends show high dielectric constants (ε_blend = 40), which give better frequency stability (1 MHz), and excellent mechanical properties. Based on certain volume fractions, the measured dielectric constants (ε _blend ) were found to exceed those of the corresponding polymers, in contrasted to conventional composites, where ε_polymerA < ε_composite < ε_polymerB. SEM investigations suggest that the enhanced dielectric behavior originates from significant interfacial polymer‐polymer interactions. DSC and XRD demonstrate that blending PA11 with PVDF affects the crystalline behavior of each component. However, the PA11/PVDF blends exhibit a slightly high dielectric loss (tanδ ≈ 0.17), which is a great disadvantage to a capacitor. Adding a copolymer of styrene and maleic anhydride decreased the dielectric loss (tanδ ≈ 0.057) and increased the dielectric constant (ε_blend = 60). Our findings suggest that the high‐ε polymeric blends created represent a novel type of material that is flexible and easy to process, of relatively high dielectric constant, of high breakdown strength and, moreover, is suited to applications in flexible electronics.

     

Analytical formulas for complex permittivity of periodic composites. Estimation of gain and loss enhancement in active and passive composites

ABSTRACT

The asymptotic homogenization method is applied to complex dielectric periodic composites. An equivalence to coupled dielectric problems with real coefficients is shown. This is similar to a piezoelectric problem: an out-plane mechanical displacement and an in-plane electric potential establishing a correspondence principle. Closed-form formulas for the complex dielectric effective tensor in the case of a square array of circular inclusions embedded in a matrix are given. These formulas are written in terms of a real and symmetric matrix which facilitates the implementation of the computational scheme. We also get similar formulas for multilayered complex dielectric composites. The real closed-form formulas are advantageous for estimating gain and loss enhancement properties of active and passive composites in certain volume fraction intervals. Numerical computations are performed and the results are compared with other approaches showing the usefulness of the obtained formulas. This may be of interest in the context of metamaterials.     

Molecular dynamic study of dielectric polarization and ferroelectricity in a model polar polymer

Molecular dynamics simulations are used to explore the polarization response of a lamellar crystal consisting of folded chains of a highly simplified model polar polymer. The system is based on a united atom model of polyethylene with constrained bond lengths and bond angles, and it is endowed with artificial partial charges placed on the united atoms to give it a simple polar character. Simulations performed with various temperatures, electric field directions, and electric field application histories reveal a complicated sequence of reorientation processes, including pronounced ferroelectric behavior. The sequence includes a weak, temperature‐independent prompt response, and a slow‐rising delay regime with stretched exponential behavior and thermally‐activated reorientation parameters consistent with trans‐gauche (TG) barrier crossings in the amorphous phase. When the delay regime has progressed sufficiently, a primary large‐amplitude response due to organized rotation of large subsegments in the crystalline phase occurs in a rapid manner that requires relatively few TG barrier crossings. A final, extremely slow rise in residual polarization completes the sequence. © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2015 , 53, 740–759     

A physical model on electron mobility in InGaAs nMOSFETs with stacked gate dielectric

An inversion-channel electron mobility model for InGaAs n-channel metal–oxide-semiconductor field-effect transistors (nMOSFETs) with stacked gate dielectric is established by considering scattering mechanisms of bulk scattering, Coulomb scattering of interface charges, interface-roughness scattering, especially remote Coulomb scattering and remote interface-roughness scattering. The simulation results are in good agreement with the experimental data. The effects of device parameters on degradation of electron mobility, e.g. interface roughness, dielectric constant and thickness of high-k layer/interlayer, and the doping concentration in the channel, are discussed. It is revealed that a tradeoff among the device parameters has to be performed to get high electron mobility with keeping good other electrical properties of devices.     

Structural and Dielectric Properties of Polythiophene/Chrom(III) Acetylacetonate Composites

The dielectric and morphological properties of polythiophene (PT) filled with various mass fractions of chrom(III) acetylacetonate (Cr(acac)₃), synthesized via chemical oxidative polymerization, are described. Significant shifts of the absorption peak of the C-S bond in the Fourier transform infrared (FT-IR) spectra indicated that the metal cations mostly interacted with sulfur atoms. Thermal analyses performed by differential scanning calorimetry (DSC) indicated that the cold crystallization temperature (T_cc) of PT decreased with increasing doping level. Microstructural differences were observed between PT and its composites in scanning electron microscopy (SEM) images. Dielectric measurements showed that the conductivity of the PT significantly increased with increasing doping level, from ?10^?7 S/m to ?10^?4 S/m at 10 kHz and 300 K.     

Universal power law behavior of the AC conductivity versus frequency of agglomerate morphologies in conductive carbon nanotube‐reinforced epoxy networks

The Jonscher universal power law for ac conductivity versus frequency (f = ω/2π) in the dispersion region was tested for a multiwall carbon nanotube/epoxy nanocomposite. The effect of changes in agglomerate morphology on the fitting parameters A and n in the equation σ_{ac =} Aωⁿ was investigated. Changing nanotube agglomerate morphology was tracked by optical microscopy through curing. Evolving morphology was compared alongside ac conductivity obtained via a broadband dielectric spectrometer to elucidate possible physical meaning of the universal power law in the context of this system. The ?logA/n was unaffected by changes in agglomerate morphology affected during cure, yet connected with each other in their dependence on temperature. For this system, the relationship between the fitting parameters in the universal dynamic response equation remains empirical at this stage with regard to biphasic “texture” or morphology within such a network. Electrical conductivity σ versus frequency ω for a composite consisting of agglomerated multiwalled carbon nanotubes dispersed throughout a cured epoxy matrix was discovered to follow the empirical universal dynamic response equation of Jonscher. The frequency behavior of the exponent n is discussed in terms of underlying morphology throughout which charge carriers migrate. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part B: Polym. Phys. 2016 , 54, 1918–1923     

Crosslinkable high dielectric constant polymer dielectrics for low voltage organic field‐effect transistor memory devices

I n this study, we successfully synthesized water/methanol soluble random copolymers with a high dielectric constant, poly(n‐(hydroxymethyl) acrylamide‐co‐5‐(9‐(5‐(diethylamino)pentyl)?2‐(4‐vinylphenyl)?9H‐fluorene(P(NMA‐co‐F6NSt)), which contained chemical crosslinkable segment (NMA) and hole trapping building block (F6NSt). The feeding molar ratios of two monomers (NMA:F6NSt) were set as 100:0, 95:5, 80:20, and 67:33 for the copolymers of P1 , P2 , P3, and P4 , respectively. The crosslinked P(NMA‐co‐F6NSt) thin film could serve as both dielectric and charge storage layers in organic field‐effect transistor (OFET) memory device and exhibited high k (i.e., 4.91–6.47) characteristics, leading to a low voltage operation and a small power consumption. Devices based on the P1 ‐ P4 dielectrics showed excellent insulating properties and good charge storage performance under a low operating voltage in a range of ±5V because of tightly network structures and well‐dispersed trapping cites. In particular, P3 ‐based memory device exhibited a large memory window of 4.13 V with stable data retention stability over 10⁴ s, a large on/off ratio of 10⁴, and good endurance characteristics as high as 200 cycles. The above results suggested that a high‐performance OFET memory device could be facilely achieved using the novel crosslinkable high‐k copolymers. © 2016 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2016 , 54, 3224–3236