Concentrated electrolyte solutions at high temperatures and pressures

A survey is given of recent experimental results obtained from high-temperature, high-pressure investigations with water, aqueous solutions, and ionic fluids. Data on the static dielectric constant of water to 550°C and 5 kbar are given and discussed with respect to their relation to water structure. Infrared and Raman spectra of HDO in pure water have been obtained to 400°C and 4 kbar, which give information on hydrogen bonding. Xe–H₂O and CO₂–H₂O mixtures were investigated in the infrared. Ni(II) and Cu(II) complexes were investigated by absorption spectroscopy in aqueous solutions of high chloride content to 350°C and 2–6 kbar. The gas-liquid critical point of ammonium chloride was found at 880°C and 1635 bars. This fluid appears to be predominantly ionic even in the critical region. The possibility of converting pure polar fluids such as ammonia and water into concentrated ionic solutions by self-ionization at very high pressures is mentioned.This paper was presented at the symposium, The Physical Chemistry of Aqueous Systems, held at the University of Pittsburgh, Pittsburgh, Pennsylvania, June 12–14, 1972, in honor of the 70th birthday of Professor H. S. Frank.     

双折射光纤中克尔效应及光纤－光学逻辑门

本文详细地研究了单模双折射光纤中的克尔效应．讨论了其应用于光纤－光学逻辑门的优点,给出了有关的理论分析和计算结果以实验装置,确定了强度型逻辑门的“１／０”状态,测出了输出光脉冲宽度．理论分析和实验结果符合良好．     

浮动电极对屏蔽栅沟槽型MOSFET特性的影响

提出了在屏蔽栅沟槽型MOSFET(SGT)的沟槽侧壁氧化层中形成浮动电极的结构,通过改善电场分布,优化了特征导通电阻与特征栅漏电容。在传统SGT结构的基础上,仅通过增大外延层掺杂浓度,改变浮动电极的长度和位置以及氧化层厚度,最终得到击穿电压为141.1 V、特征导通电阻为55 mΩ·mm²、特征栅漏电容为4.72 pF·mm^-2的浮动电极结构。与相同结构参数的SGT结构相比,在击穿电压不变的条件下,浮动电极结构的特征导通电阻降低了9.3%,Baliga优值提升了13%,特征栅漏电容降低了28.4%。     

Chiral Se Nanobrooms with Wavelength and Polarization Sensitive Scattering

High-index dielectric nanostructures offer strong magnetic and electric resonances in the visible range and low optical losses, stimulating research interest in their use for light manipulation technologies. Lithographic fabrication of dielectric nanostructures, while providing precise control over the pattern dimensions, limits the scalability of this approach for practical applications due to an inefficient fabrication process and limited production quantity. Here, the colloidal synthesis of high-index chiral dielectric nanostructures with a broom-like geometry made from trigonal Se is demonstrated. The anisotropic morphology and crystal structure of Se nanobrooms enable both linearly and circularly polarized scattering, as well as spectrum variation along the particle axis, which is, to the authors’ knowledge, the first observation of such behavior from dielectric colloidal nanostructures. To show the versatility of the highly scattering Se NB suspensions, 2D and 3D printing of Se NB inks are demonstrated as a proof of concept. This approach provides a way to manipulate light using aqueous dispersions of high-index dielectric nanostructures, unlocking their potential to fit in various morphologies and dimensions in 2D and 3D for broad applications.     

Relaxation-Induced Significant Room-Temperature Dielectric Pulsing Effects

Thermo-responsive dielectric materials are in urgent demand owing to the rapid development of smart electronic/electrical systems. Although different types and structures of thermally responsive dielectric materials have been continuously reported, their dielectric response behaviors all originate from thermodynamic phase transitions. Herein, it is demonstrated that structural relaxation in poly(vinylidene fluoride) (PVDF), a non-thermodynamic phase transition, can induce a significant thermal dielectric pulse at room temperature. The dielectric pulse strength of up to 6.3 × 10⁵ at 20 Hz, with a dielectric pulsing temperature of 24 °C, is achieved from polyethylene glycol (PEG)-PVDF coaxial nanofibrous films (PVDF@PEG), fabricated via a continuous blow spinning method. Moreover, the films exhibit excellent flexibility, adjustable strength and toughness, switchable hydrophilicity/hydrophobicity, and effective thermal management capability. The relaxation-induced dielectric pulsing effect, outstanding multifunctionality, and simple preparation combine to promote further scalability and prospects of PVDF@PEG. In particular, the work contributes to the discovery of the relaxation-induced dielectric response mechanism, which provides a new strategy for the generation of thermo-responsive dielectric materials.     

Analysis of issues in gate recess etching in the InAlAs/InGaAs HEMT manufacturing process

We have developed an InAlAs/InGaAs metamorphic high electron mobility transistor device fabrication process where the gate length can be tuned within the range of 0.13 μm–0.16 μm to suit the intended application. The core processes are a two-step electron-beam lithography process using a three-layer resist and gate recess etching process using citric acid. An electron-beam lithography process was developed to fabricate a T-shaped gate electrode with a fine gate foot and a relatively large gate head. This was realized through the use of three-layered resist and two-step electron beam exposure and development. Citric acid-based gate recess etching is a wet etching, so it is very important to secure etching uniformity and process reproducibility. The device layout was designed by considering the electrochemical reaction involved in recess etching, and a reproducible gate recess etching process was developed by finding optimized etching conditions. Using the developed gate electrode process technology, we were able to successfully manufacture various monolithic microwave integrated circuits, including low noise amplifiers that can be used in the 28 GHz to 94 GHz frequency range.     

IGBT芯片静态输出曲线连续测量方法

绝缘栅双极型晶体管(IGBT)芯片的静态输出曲线是考核其能量损耗及指导多芯片并联设计的重要指标之一。现有测量IGBT静态输出曲线的方法多采用商用化的功率器件分析仪,然而商业化功率器件分析仪存在价格昂贵、夹具单一的问题。亟需开发一种简单、快速、有效的静态输出曲线测量方法。面向高压IGBT芯片,提出一种新的静态输出曲线连续测量方法及测试电路,有效减小了IGBT芯片的电导调制效应和温升效应对静态输出曲线的影响。通过实时测量动态过程中的电压及电流,可以快速得到IGBT芯片静态输出曲线。通过对比本文连续法与功率器件分析仪的测量结果,证明了所提方法的有效性。     

5G 功放DPD 的FPGA 宽带实现及自动优化

5G 宽带功放数字预失真器(DPD)的FPGA 实现过程中,常遇到数字处理带宽不够和资源有限问题,对 此,文中提出一种基于双路并行数据流的数字预失真带宽扩展方法和基于Zynq Ultrascale+ MPSoC 的自动化模型优化 验证方法,可快速实现对5G 宽带功放线性化方案的优化。使用该并行处理结构的数字预失真器,克服了数字电路最 大时钟频率造成的对FPGA 线性化带宽的限制,使得数字预失真电路在每个时钟周期内可以处理更多的数据,不仅有 效地增加了数字处理带宽,而且降低了DPD 的功耗。然而,这种带宽增加以消耗更多硬件资源为代价,对此,文中同时 提出了对预失真非线性模型的在线自动优化方法,以简化非线性模型、降低DPD 的硬件资源开销。最后,在Zynq Ultrascale+ FPGA 实验平台上实现了具有两路并行数据处理的I-MSA 自优化数字预失真电路,采用100 MHz 的5G 新无 线电(NR)信号在2. 6 GHz 功率放大器上进行线性化实验验证,获得了满意的预失真性能,验证了所提方法的有效性。     

Temperature- and hydration-dependence of molecular mobility in seeds

Broad-band ac dielectric relaxation spectroscopy (DRS) and various techniques of thermally stimulated currents (TSC) have been used to investigate molecular mobility in cereal and legume seeds, over wide ranges of water content and temperature. We focused our interest on the detailed study of the interactions between water and seed constituents. The results are quantitatively discussed, using various concepts dictated by the experimental techniques employed and in relation to the protein and carbohydrate contents of the seeds. In addition, the glass transition in the seeds, freezing and melting of water, and the protonic conduction process have been studied in some detail.Financial support through the Greek Ministry of Industry, Energy and Technology (Secretariat of Research and Technology), the Czech Ministry of Education, Youth and Sport (Dept. of International Scientific and Technological Cooperation), and the Empirikos Foundation is gratefully acknowledged.     

Investigation of superconductivity effects in single-phase and multiphase Bi2Sr2CaCu2O8 single-crystals at 2-MM wavelengths

Experimental investigations of superconductivity effects in single-phase and multiphase Bi₂Sr₂CaCu₂O₈ single-crystals have been carried out at 142 GHz frequency by means of the standing wave profile method [1]. Josephson harmonic generation has been observed to be responsible for the appearence of additional peaks on the standing wave profile of the open dielectric resonator loaded with a properly orientated multiphase high-T_c superconductor specimen. This leads to the conclusion that most of the Josephson junctions in multiphase crystals are located in certain crystallographic planes. The investigations of temperature dependencies showed that sharp resonant peaks of conductivity observed earlier [2] at 60 GHz could also be observed at 142 GHz.