嵌套技术扩散模型估计与落后地区的技术追赶

技术差距带来的技术扩散效应决定了区域间可能存在着技术收敛.在限制指数模型中,所有国家和地区将获得相同的技术进步率,在逻辑斯蒂模型中,人力资本水平成为制约技术收敛的条件.将Benhabib和Speigel(2005)的跨国技术收敛的实证研究工作推广到国内地区研究之中,分析了中国30个省区1990-2008年技术进步率的影响因素及收敛情况.实证研究结果表明,中国30个省区的技术进步率趋异.人力资本是促进地区自主创新和技术扩散的积极因素.     

Convergence to equilibrium of biased plane Partitions

We study a single‐flip dynamics for the monotone surface in (2 + 1) dimensions obtained from a boxed plane partition. The surface is analyzed as a system of non‐intersecting simple paths. When the flips have a non‐zero bias we prove that there is a positive spectral gap uniformly in the boundary conditions and in the size of the system. Under the same assumptions, for a system of size M, the mixing time is shown to be of order M up to logarithmic corrections. © 2010 Wiley Periodicals, Inc. Random Struct. Alg., 39, 83–114, 2011     

Decay of a quantum dot in two-dimensional metallic photonic crystals

In this paper we have developed a theory for the decay of a quantum dot doped in a two-dimensional metallic photonic crystal consisting of two different metallic pillars in an air background medium. This crystal structure forms a full two-dimensional photonic band gap when the appropriate pillar sizes are chosen. The advantage of using two metals is that one can easily control the density of states and optical properties of these photonic crystals by changing the plasma energies of two metals rather than one. Using the Schrödinger equation method and the photonic density of states, we calculated the linewidth broadening and the spectral function of radiation due to spontaneous emission for two-level quantum dots doped in the system. Our results show that by changing the plasma energies one can control spontaneous emission of quantum dots doped in the metallic photonic crystal.     

Enlargement of absolute photonic band gap in modified 2D anisotropic annular photonic crystals

We analyze the absolute photonic band gap in two dimensional (2D) square, triangular and honeycomb lattices composed of air holes or rings with different geometrical shapes and orientations in anisotropic tellurium background. Using the numerical plane wave expansion method, we engineer the absolute photonic band gap in modified lattices, achieved by addition of circular, elliptical, rectangular, square and hexagonal air hole or ring into the center of each lattice unit cell. We discuss the maximization of absolute photonic band gap width as a function of main and additional air hole or ring parameters with different shapes and orientation.     

Abnormal behaviour of one-dimensional photonic crystal with defect

The effect of introduction a defect in a conventional one-dimensional photonic band gap (PBG) structure in respect of the dispersion relation, reflectivity, group velocity and effective group index of such a structure has been studied. In particular, the dependence of various properties of such a structure on the angle of incidence of the electromagnetic waves has been given more importance in the present study. The study shows that inside the conventional PBG structure as well as defect PBG structure, the group velocity and effective group index become negative for certain ranges of normalized frequency. In a defect PBG structure, it is possible to achieve desired values (negative or positive) of group velocity and effective group index by choosing appropriate angle of incidence, whereas in conventional PBG structures, the maximum (negative and positive) values of group velocities and effective group index are found to be almost independent of the angle of incidence. This is a unique property of defect PBG structure which is different from the properties of conventional PBG structures. Because of this unique property, defect PBG structure may be widely used for construction super lenses, lasing without inversion and other optical systems in photonics.     

Structural and magnetic characterization of rhombohedral Ga1.2Fe0.8O3 ceramics prepared by high-pressure synthesis

The rhombohedral α- Ga_1.2Fe_0.8O₃ ceramics have been synthesized by using a high pressure technique at a pressure of 5 GPa and a temperature of 800 °C from orthorhombic ε- Ga_1.2Fe_0.8O₃ ceramics, which were identified to be isostructural with α- Fe₂O₃ and α- Ga₂O₃. The low temperature magnetism has been studied for α- Ga_1.2Fe_0.8O₃, the saturation magnetization is at 5 K, and the Morin temperature has not been found. Moreover, it is most probable that the spin reorientation of α- Ga_1.2Fe_0.8O₃ has been found at 50 K resulted from the change of magnetic dipole anisotropy and single-ion anisotropy with temperature.     

Room temperature growth of InxGa1−xN thin films by mixed source modified activated reactive evaporation

Polycrystalline In_xGa_1−xN thin films were prepared by mixed source modified activated reactive evaporation (MARE) technique. The films were deposited at room temperature on glass substrates without any buffer layer. All the films crystallize in the hexagonal wurtzite structure. The indium concentration calculated from XRD peak shift using Vegard's law was found to be varying from 2% to 92%. The band gap varies from 1.72 eV to 3.2 eV for different indium compositions. The indium rich films have higher refractive indices as compared to the gallium rich films. The near infra-red absorption decreases with gallium incorporation into InN lattice which is mainly due to decrease in the free carrier concentration in the alloy system. This fact is further supported from Hall effect measurements. MARE turns out to be a promising technique to grow In_xGa_1−xN films over the entire composition range at room temperature.     

Formation of α-Si1−xCx:H and nc-SiC films grown by HWCVD under different process pressure

In this work, hydrogenated amorphous silicon carbide (α-Si_1−xC_x:H) and nanocrystalline SiC (nc-SiC) thin films were deposited by hot wire CVD (HWCVD) using SiH₄/C₂H₂/H₂ gas mixtures. It was found that the films prepared under low gas pressure were α-Si_1−xC_x:H and those prepared under high gas pressure were nc-3C-SiC. The α-Si_1−xC_x:H films showed enhanced density of C-H_n and Si-C bonds with increasing C₂H₂ fraction, which induced an increase in optical gap from 1.8 to 3.0 eV. For the deposition process of nc-SiC, the E_g opt of the deposited films varied from 1.9 eV to 2.5 eV as the filament temperature increased from 1700 to 2100 °C. The deposition rate decreased rapidly from 5.74 nm/min to 0.8 nm/min with increasing T_F.     

The influence of annealing temperature on the slip plane activity and optical properties of nanostructured ZnO films

The zinc oxide films were prepared by the sol-gel method on the ordinary glass substrates. The activity of slip systems were evaluated by X-ray diffraction line broadening analysis using convolution multiple whole profile (CMWP) fitting procedures. It was found that in all temperatures the 〈a〉 type dislocations is dominating and its fraction increases with the rise of annealing temperature in the range of 350-600 °C. The investigation on the optical properties of films showed that the optical band gap energy increases linearly with the annealing temperature and crystallite size but decreases with the lattice strain.     

Pulsed laser ablation of zinc selenide in nitrogen ambience: Formation of zinc nitride films

Zinc nitride (Zn₃N₂) thin films are prepared using pulsed laser deposition (PLD) from zinc selenide (ZnSe) target at different nitrogen ambient pressures viz. 1, 3, 5, 7 and 10 Pa. The films prepared with nitrogen pressures 1 and 3 Pa are amorphous in nature, whereas the films prepared at 5, 7 and 10 Pa exhibit the presence of cubic bixbyite Zn₃N₂ structure with lattice parameter very close to bulk of Zn₃N₂. The particle size calculated by Debye Scherrer's formula is in the nano regime. Surface morphology of the films is studied by SEM and AFM analysis. Optical parameters such as band gap, refractive index and porosity of the films are calculated. Moreover, the present study confers an outlook about how do various factors such as substrate temperature, reactive supplementing gas and laser-target interaction influence the film developing process during pulsed lased deposition.