一种齐纳二极管控制式轨对轨CMOS运算放大器

采用0.6μm CMOS工艺,设计了一种齐纳二极管控制式轨对轨运算放大器.该运放采用了3.3V单电源供电,其输入共模范围和输出信号摆幅接近于地和电源电压,即所谓输入和输出电压范围轨对轨.该运放的小信号增益为82dB,单位增益带宽为12.34MHz,相位裕度为68°.由于电路简单,工作稳定,输入输出线性动态范围宽,非常适合于SOC芯片内集成.文中主要讨论该轨对轨运算放大器的原理,性能及设计方法,并进行了模拟仿真.     

一种新的阵列天线幅相误差校正算法

根据子空间的基本原理,提出一种新的阵列天线幅相误差校正算法,该方法利用粗略已知的校正源方位角信息进行优化,使用迭代的方法逼近幅相误差的真实值.由于不需要其他的迭代初始值,从而保证该方法能收敛到最优解.计算机仿真实验证明了该方法的有效性.     

一种低压、恒增益Rail-to-rail运算放大器的设计

文章设计了一种低压、恒定增益、Rail-to-rail的CMOS运算放大器。该放大器采用直接交迭工作区的互补并联输入对作为输入级,在2V单电源下,负载电容为25pF时,静态功耗为0.9mW,直流开环增益、单位增益带宽、相位裕度分别为74dB、2.7MHz、60°。     

基于流密码算法构造跳频序列簇

跳频序列的性能对跳频通信系统性能有着决定性的影响.本文基于密码学的流密码加密机制,提出构造一种跳频序列簇的方法.文中以蓝牙技术采用的E0流加密算法为例,对输出的二进制加密流进行多位组合构成跳频序列的频隙号.并在此基础上对产生的跳频序列从安全性,均匀性,线性复杂度,汉明相关性等各个方面进行了全面的理论分析和计算机仿真,证明基于流密码算法产生的跳频序列族有着优秀的性能,完全满足跳频序列簇的要求.     

17/11双正交小波的优化设计及其对图像压缩性能的分析

许多适合于图像编码的小波,如CDF-9/7,Winger-17/11(W-17/11),Villasenor-6/10和10/18(V-6/10和V-10/18)小波,其滤波器系数是无理数,需要用无限的计算精度实现对应的离散小波变换(DWT)。该文给出了一种参数化构造17/11双正交小波组的简便方法:首先把小波合成滤波器表示为用两个自由参数表达的三角多项式,然后把双正交小波的精确重构条件归结为一个线性方程组,最后求解此方程组得到对应的小波分解滤波器,从而得到了17/11双正交小波滤波器的参数表达式。通过调整表达式中的自由参数,可以随意构造具有所需特征的17/11线性相位小波滤波器。作为构造实例,构造出一种新的有理系数17/11双正交小波滤波器,它具有优化的编码增益。实验表明:其压缩性能与W-17/11和V-10/18小波滤波器相当,优于CDF-9/7和V-6/10小波滤波器。     

光折变Bi12TiO20晶体中的波耦合性质

研究了光折变Bi12TiO20(TBO)晶体中的二波耦合矢量特性.对扩散记录全息求得信号光能量增益和偏振态改变的分析解,研究它们在3种制备可得的晶体切割面上随入射抽运光和信号光(不同)偏振方向、光栅取向以及晶体厚度的变化关系,并给出在任意光栅取向的取值范围.分析了信号光能量增益和偏振态改变量分别达到最大值时各向同性和各向异性耦合的作用,并研究旋光、压电及弹光效应在3种晶体切割面上对矢量波耦合的影响.     

基于Rayleigh衰落信道下LDPC编码的星座成形

针对消息在信道传输过程中的成形损耗问题,提出了一种在Rayleigh衰落信道下基于低密度奇偶校验(Low-Density Parity-Check, LDPC)编码的星座成形系统。该方法基于脉幅调制(Pulse Amplitude Modulation, PAM)下的星座图,通过在发送端加入一个成形编码器(作用是提高输出比特为0的概率),使得星座图中低能量的符号比高能量的符号更容易被选中,从而提高成形增益。并且在解调器和译码器之间进行迭代译码,进一步提高了系统的性能。理论分析和仿真结果表明,在独立Rayleigh衰落信道下,与不采用星座成形的系统相比,该方案大大提高了系统的误差性能和成形增益。     

On practical construction of electronically controllable compact current amplifier based on commercially available elements and its application

This paper presents a new concept of a current amplifier (CA) with electronically adjustable features (input resistance and current gain) implemented using commercially available devices. Several variations of basic structure are studied, described and the selected solutions verified by PSpice simulations and, moreover, also by lab experiments. Saving one discrete active device in comparison to already known similar topologies of single-input and single-output version (CA-SISO) is significant benefit whereas all other qualitative features remain very similar to previously reported ones. Simple modification of CA concept to multiple-output version (CA-SIMO), having independent adjustable current gain in each of output branches, is easily available. Experimental tests of features of discussed concepts yield adjustability range of input resistance from 100 Ω to more than 10 kΩ and current gain adjusting from 0.1 to 3.5 with bandwidth (−3 dB) of CA transfer response up to 16 MHz. As an example of application, proposed CA was successfully implemented in quadrature oscillator with a very wide tunability range from 29 kHz to 4.94 MHz. It was achieved by electronic control of several adjustable parameters of proposed CA.     

Harmonic analysis of GaN-HEMTs at different temperatures and frequencies using Volterra power series

In this study, the detailed harmonic analysis of GaN high electron mobility transistor (HEMT) at different temperatures and frequencies is presented. Volterra power series and multi-dimensional Laplace transform are used as a method. The Volterra power series is also solved up to third degree, and the small signal transfer functions of kernels (H₁, H₂ and H₃) are obtained. The relationship between drain inductance (L_d), gate–source voltage (V_gs), impedance (Z_L) and the effect of frequency (F_r) to the output gain is identified. Besides, the nonlinear gains of H₁, H₂ and H₃ kernels of the GaN-HEMT are obtained. The inverse relationship between the output gains of H₁, H₂ and H₃ kernels are derived. An unsuitable situation has also been identified for sub-carrier inter-modulation systems. In addition, an asymmetric structure is also obtained between the output gain of H₂ and side-band frequencies. The effects of other parameters are carried out for the output gain.     

Influences of the initial parameters on the performance of a coaxial-waveguide cyclotron autoresonance maser (CARM) amplifier

Nonlinear simulations demonstrate the possibility for a coaxial-waveguide cyclotron autoresonance maser (CARM) amplifier to operate at a frequency of 140?GHz emitting hundreds of watts with an ultrahigh gain of 68?dB. Careful design of the operating magnetic field is of importance to the power of the device, although the other initial parameters such as electron-beam radius and voltage also affect the power. Like a cylindrical-waveguide CARM, a coaxial-waveguide CARM amplifier is sensitive to the velocity spread of the electron beam.