Structural characterisation of GaAlN/GaN HEMT heterostructures

(GaN/GaAlN/GaN)//Al₂O₃(00.1) HEMT heterostructures have been studied by X-ray scattering techniques, transmission electron microscopy and atomic force microscopy. X-ray reflectometry has been used to determine with a high accuracy both the individual layer thicknesses and the interfacial roughness, in spite of the weak electronic density contrast between layers. From the Fourier inversion method and using a simulation software, the roughness of the interface corresponding to the two-dimensional electron gas location has been determined equal to 0.5 nm. Both high resolution X-ray diffraction and transmission electron microscopy experiments have shown the excellent crystallinity of the heterostructures. Finally, the surface morphology has been inferred using atomic force microscopy experiments.     

油田供水管网管道内径反演方法研究

在对油田供水管网进行系统仿真计算时候,其数学模型都涉及到管网中各管段的内径、粗糙度等参数,这类参数的选取直接影响管网平差计算的精度.在管网运行多年后,其上述参数大都和原始设计参数相差较大,由于实际生产过程中不允许也不可能对管网中的管道管径进行测量,导致管网仿真计算数学模型与实际不符,使得仿真计算失去本来意义.为解决此问题,提出了一种运用部分测试数据对管网管道内径进行反演求解的方法.从数学方面证明了其求解方法可行性,实际算例计算结果表明,运用该方法可以使管网平差计算结果与测试结果很好的吻合.     

Cauchy矩阵及其相关的插值问题

用复分析和矩阵方程理论给出C auchy矩阵求逆公式的一种新证明.作为应用,研究与H erm ite-C auchy矩阵相关的N evan linna-P ick插值问题,给出该插值问题全部解的简洁表示.     

微带宽带匹配3 GHz低通滤波器设计

叙述了用微带电路设计制作的宽带匹配低通滤波器的原理与设计.与常规低通滤波器不同,该滤波器输入端口在带通阻带内均呈匹配特性,他可以解决常规低通滤波器在系统连接中由于带外失配导致的带外抑制性能变劣问题.整个电路做在40×20×0.5 mm3的复合介质衬底上,实验结果表明,宽带匹配3 GHz低通滤波器带内的插损小于1.5 dB,带外抑制大于40 dB,带外驻波比小于2.5.     

A new method for multi-exponential inversion of NMR relaxation measurements

The NMR technique has been widely applied to petroleum well logging and rock core analysis since the 1990s when NUMAR introduced a reliable NMR logging tool to the oil industry. It has been playing an important role for prospecting and exploiting resource of oil and gas for the last ten years. In an oil well, NMR can provide parameters of reservoir and fluid properties, such as porosity, pore size distribution, bound water volume, bulk volume of free water, permeability, in-situ fluid dif…     

双奇核~(184)Au中πi_(913/2)νi_(13/2)转动带的结构特征研究

利用重离子熔合蒸发反应和在束γ谱学实验方法 ,研究了双奇核184 Au的高自旋态能级结构 .扩展了基于πh9/ 2 ν7/ 2 - [5 14 ]和πi13/ 2 νi13/ 2 2准粒子组态下的转动带能级纲图 ,建立了两个转动带之间以及πh9/ 2 ν7/ 2 - [5 14 ]带与基态的谱学连接 .从而确定了πi13/ 2 νi13/ 2 带能级的自旋和宇称 ,证实了此转动带在低自旋区出现旋称反转 .分析了πi13/ 2 νi13/ 2 带和相邻核转动带的准粒子顺排特征 ,指出此带的第一回弯以及相邻核转动带在低频观测到的顺排异常可能与h9/ 2 质子顺排有关 .     

生物组织成像中用反相位脉冲技术提高二次谐波信噪比的研究

本文基于有限振幅声波在介质中的非线性传播理论,分析了反相位脉冲技术对生物组织中二次谐波增强的原理.实验中利用反相位脉冲激发超声换能器,对生物组织中传播的非线性信号相加分析.结果表明反相位脉冲技术可有效抑制基波及奇次谐波信号,而可增强偶次谐波信号6dB.与滤波器滤波法相比,反相位脉冲技术在抑制基波信号的同时,可有效地提高二次谐波的信噪比,因而在生物组织的二次谐波成像中具有广阔的应用前景.     

制备高分子水基微粒体系的相反转技术

高分子树脂的微粒化水基化体系具有广阔的应用前途，正引起人们极大关上方面技术能把几乎所有的高分子树脂乳化为微粒化水基化体系，具有很宽的应用范围，本文简要地从相反转技术的发展，相反转模式，相反转类型，相反转的理论处理等４方面作以介绍。     

Inversion and canonization of block matrices

The paper is concerned with the problem of inverting block matrices to which the well-known Frobenius— Schur formulas are not applicable. These can be square matrices with four noninvertible square or rectangular blocks as well as square or rectangular matrices with two blocks. With regard to rectangular matrices, the results obtained are a further step in the development of the canonization method, which is used for solving arbitrary matrix equations.     

An accurate, analytical, and technology-mapped definition of the surface potential at threshold and a new postulate for the threshold voltage of MOSFETs

A novel approach of defining the threshold voltage for long channel MOSFETs has been presented in this paper, where it has been proposed that it corresponds to the gate-to-source voltage for which the drift and diffusion components of the total drain current become equal to each other. In order to avoid the greater computation time associated with the numerical solution of these two components, an analytical expression of the surface potential, corresponding to the threshold condition, is given here, which has the same functional form as the one proposed by Tsividis. The fuzzy parameter n, appearing in this expression of the surface potential, is expressed as a function of the substrate doping density (N_A) and the oxide thickness (t_ox). The threshold voltage values, obtained analytically from the relation between the surface potential at the threshold condition and the closed-form technology-mapped expression of the fuzzy parameter n, show an excellent match with those obtained from SILVACO simulations for a wide range of N_A and t_ox, with the maximum error being only about 4%. The comparison of the percent error values of the threshold voltage obtained from this proposed model with those obtained from the other two recently proposed methods, all with respect to SILVACO simulation results, further verifies the validity of our completely analytical, mathematically simple, and straight-forward approach, proposed in this work here.