氨化温度对Si基GaN纳米结构质量的影响(英文)

通过磁控溅射技术在Si(111)衬底上沉积Ga2O3/Co薄膜,然后在不同温度下氨化制得GaN纳米结构。采用X射线衍射(XRD)、傅里叶红外吸收谱(FTIR)、扫描电子显微镜(SEM)、高分辨透射电镜(HRTEM)和光致发光谱(PL)对样品的结构、形貌和光学特性进行了表征。结果显示合成的GaN纳米结构具有六方纤锌矿结构,且纳米结构的生长受温度影响很大。PL谱显示在388nm处有一强的紫外发光峰,表明其在低维激光器件方面的应用优势。同时对纳米结构的生长机制进行了简单讨论。     

基于6H-SiC衬底外延石墨烯的被动锁模掺镱光纤激光器

报道了6H-SiC衬底外延生长的石墨烯作为可饱和吸收体,环形腔结构的全正色散被动锁模掺镱光纤激光器。在注入抽运功率为250mW时,得到稳定的重复频率为1.05MHz的自锁模脉冲,平均输出功率为6mW;当注入抽运功率增加到480mW时,最大平均输出功率为20mW,相应的最高单脉冲能量为19nJ,激光脉冲宽度约为520ps。     

碲镉汞液相外延薄膜的应力研究

用X射线衍射方法对液相外延(LPE)技术生长的碲镉汞(MCT)外延薄膜和CdTe衬底进行了观察与分析。研究表明:MCT薄膜中存在着不同程度的应力,主要表现为晶格的扭曲(300″～1200″范围),这种扭曲致使外延膜双晶回摆曲线宽化,宽化值为100″～150″,外延膜的晶格扭曲与CdTe衬底的不完整性有对应关系。研究还表明:LPE的生长条件对外延膜中的晶格扭曲也有较大影响。本文还讨论了CdTe衬底晶格扭曲形成的因素并探究了减少外延膜晶格扭曲的方法。     

带有多层介质衬底FSS的损耗和带宽特性分析

本文简要介绍应用模匹配方法分析带有多层介质衬底的FSS频率响应技术,在此基础上研究带有多层介质衬底的平面Y形缝隙周期阵列对平面波的频率传输特性。重点讨论介质层厚度变化对FSS传输损耗及带宽的影响。     

Chemical vapor deposition synthesis of self-aligned carbon nanotube arrays

A procedure for producing arrays of self-aligned carbon nanotubes (CNTs) using standard chemical vapor deposition (CVD) is reported. Using UV photolithography, silicon substrates are patterned with a thin layer of thermally evaporated iron as a CNT catalyst. The CVD synthesis was carried out over a small temperature range (700°C–800°C) using acetylene and methane gasses, producing aligned CNT towers. Scanning electron microscopy (SEM) analysis shows a relationship between CNT tower height and synthesis time. Additionally, results show that impurity particles dramatically effect CNT tower growth. These results indicate that aligned CNTs can be produced in a desired pattern with height control.     

Nucleophilic Solvent Intervention in Benzylic Solvolyses. The Use of YBnx Scales in Grunwald-Winstein Type Correlation Analysis

New Y_BnX scales of solvent ionizing power are developed and considered superior to Y_x scales for benzylic bromides, chlorides, p-nitrobenzoates and tosylates in Grunwald-Winstein type correlation analysis of solvolytic reactivities. The Y_BnX values, with addition and revision, are summarized. Evidence for nucleophilic solvent intervention in the solvolysis transition state for secondary and tertiary benzylic substrates is given. The advantages of employing this tool to understand solvolysis mechanisms are discussed.     

IC封装载板的新型表面涂饰层——ENEPIG

文章介绍一种新型的化学镀镍化学镀钯与浸金表面涂饰层,克服了化学镀镍浸金涂层的缺点,更加适合于IC封装载板上应用。     

Core-level electronic properties of nanostructured NiO coatings

Nanostructured NiO films with different thicknesses were grown on nanoporous alumina membrane substrates by reactive evaporation of Ni in an oxygen atmosphere. The reactive deposition process was assisted by a low energy oxygen ion-beam in order to increase the NiO input into the pores. Surface morphology and structure of the films were analyzed by SEM and XPS. SEM observations reveal a well adhered film of NiO on the substrate. This film appears to be uniform and presents a rather irregular nanostructured morphology, built of NiO clusters with sizes ranging between 5 and 30 nm. The core-level electronic properties of this nanostructured NiO film result to be similar to those of an ultrathin film about one monolayer thick. This behaviour can be explained by the large surface to volume ratio of both systems.     

Substrates for flexible electronics: A practical investigation on the electrical,film flexibility,optical, temperature,and solvent resistance properties

Designing and developing flexible electronics requires a thorough investigation of the substrates available for the fabrication of devices. Here, we present a practical study on a variety of significant substrates: polyethylene terephthalate (PET), its heat‐stabilized (HS) derivative, HS‐PET, and polyethylene naphthalate (PEN) plastic insulating films; indium tin oxide (ITO)‐coated ITO/PEN and ITO/PET transparent conducting films; rigid ITO/glass and FTO/glass substrates; stainless steel and titanium foils. We put the substrates through a range of tests these actually undergo during device fabrication to determine their optical, mechanical flexibility (under different types of tensile and compressive stress bending with and without a PEDOT:PSS conducting polymer layer), solvent resistance, stability to temperature treatment (conductivity and deformation), and to UV irradiation. We highlight issues and propose solutions to improve substrate response. The results and thresholds extracted reveal limitations and windows of opportunity useful for the designer of flexible optoelectronics in determining manufacturing processes and the final applications under everyday operation. © 2011 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2011