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根据HL-2A装置改造的初步方案,选择优化的偏滤器位形所决定的参数,设计出可采取的偏滤器结构及水冷方式。外靶板和拱顶板上采用双剪切连接件和环向水路具有极向水流的冷却方式。通过ANSYS编码对靶板的热负荷进行分析,结果表明这样的冷却方式在降低流速要求的条件下可以提高靶板表面承载能力。     

离轴球形粒子对高斯波束的散射光通量的计算

利用矢量球谐函数展开的方法,研究了离轴球形粒子对椭圆高斯波束的散射。根据其远区散射场的形式,得出了归一化散射场的斯托克斯参量(散射强度)与颗粒直径、折射率以及散射角的关系。建立了计算离轴球形粒子对高斯波束散射通量的解析模型,计算了散射光在任意散射方向上的光通量,得到了前向任意立体角内散射通量的计算公式,为激光散射探测提供了理论依据。     

Dislocations and flux pinning in YBa2Cu3O7

The dislocation structures of bulk textured and epitaxial thin film YBa₂Cu₃O₇ superconductors are examined. Correlations between increases in flux pinning and dislocation densities are noted. A model for flux pinning by individual dislocations is presented. This gives a treatment of strain induced effects and effects of normal state region interactions. It is shown that the values of pinning predicted are in line with experimental observations.     

On a model of phase relaxation for the hyperbolic Stefan problem

In this paper we study a model of phase relaxation for the Stefan problem with the Cattaneo–Maxwell heat flux law. We prove an existence and uniqueness result for the resulting problem and we show that its solution converges to the solution of the Stefan problem as the two relaxation parameters go to zero, provided a relation between these parameters holds.     

Effect of the incomplete accommodation of the heterogeneous recombination energy on heat fluxes to a quartz surface

Taking both the heterogeneous catalytic processes, including the surface formation of particles with excited internal degrees of freedom, and the processes of multicomponent diffusion and heat transfer in the MESOX apparatus fully into account makes it possible to obtain a recombination coefficient and an accommodation coefficient of the oxygen-atoms-on-quartz recombination energy which are in good agreement with the experimental data. The heterogeneous catalysis model constructed can be used effectively for predicting the heat fluxes to the surface of reentry vehicles on their entry into the Earth’s atmosphere.     

Effect of site-selective substitution in bulk superconducting Tl2Ba2CaCu2O8

Magnetization measurements were carried out on bulk Tl₂Ba₂CaCu₂O₈ (referred to as Tl-2212) and on various site-selective substituted Tl-2212 samples. At 5K between 0 and 4.5 T, the 5 at. % Mg-doped Tl-2212 (Tl,Mg-2212) samples displayed enhanced pinning as demonstrated by a field dependent increase of the magnetic critical-current density J_c by 18 to 25 percent over that of pristine Tl-2212. Excess Mg (10–15 at. %), however, is deleterious. Rietveld refinement of the x-ray diffraction pattern showed Mg on the Tl sites. Auger electron spectroscopy analysis showed part of the Mg on grain boundaries. The flux-creep activation energies are higher for flux expulsion than for flux penetration in both Tl-2212 and Tl,Mg-2212 samples; the latter displays higher individual values. Our results demonstrate an increase in the number density of flux lines as a result of increased density of atomic-size-structural, defects by Mg (5 at. %) doping. In the Tl_2−yBa₂(Ca_1−zY_z)Cu₂O_8−x(z=0–0.3; single phase; x and y represent oxygen and thallium vacancies) system also studied, the T_c decreases as z increases. At z=0.3, the sample becomes an antiferromagnetic semiconductor.     

A partial differential equation which describes an interatomic surface

In this work we present a first-order partial differential equationwhich defines the topology of single ‘atomic entities’in multiatomic systems. Such an equation, obtained by R. F.W. Bader, is here analysed and discussed from a general mathematicalpoint of view; a method is then proposed for defining the initialor boundary condition. With this contribution we would liketo promote and stimulate a more detailed analysis which goesbeyond practical purposes and basic mathematical analysis inorder to have a deeper understanding of the theory behind theequation and its consequences for practical applications.     

一维问题的一种积分形式的流量重构算法

1引言我们考虑如下一维二阶椭圆边界值问题(-(β(x)p′)(x))′=f(x),x∈(a,b) p(a)=p(b)=0(1))其中β=β(x)是一恒正函数,且β∈H~1(a,b),f∈L~2(a,b)．事实上,在此条件下,我们可保证p∈H~2(a,b)(见[1],[2])．(1)之弱形式为：求p∈H_0~1(a,b)使得a(p,q)=(f,q),(?)q∈H_0~1(a,b),(2)其中a(p,q)=(?)_a~bβp′q′dx,(f,g)=(?)_a~bfqdx．给定(a,b)的一个分割α=x_0＜x_1＜…＜x_(n-1)＜x_n=b,令h=(?)(x_i-x_(i-1)),(?)_i表示通常相应于节点x_i的形状函数,即(?)_i是连续的分段线性函数且满足(?)_i(x_k)=δ_(ik),这里δ_(ik)=(?)i,k=0,1,…,n．又记V_h~0=span{(?)_1,(?)_2,…,(?)_(n-1)),取V_h~0作为p的逼近空间,则求解(1)的标准有限元格式为：求ph∈V_h~0使得     

助熔剂N_aCl－CdCl_2对CdS∶Cu，In结晶状态作用规律研究

发现在确定的热处理温度和时间下，随炉料中助熔剂ＮａＣｌ－ＣｄＣｌ２，总含量的增加，ＣｄＳ：Ｃｕ，Ｉｎ多晶的粒度分布变窄，数均粒径具有最大值，晶粒外型趋于规整且表面平滑．进而证明，多晶的结晶状态对其光电性能具有显著的影响．     

RE3Ga9Ge (RE=Y, Ce, Sm, Gd and Yb): compounds with an open three-dimensional polygallide framework synthesized from liquid gallium

The RE₃Ga₉Ge compounds (RE=Y, Ce, Sm, Gd and Yb) were synthesized at 850°C in quantitative yield from reactions containing excess liquid Ga. The orthorhombic crystal structure is characterized by a unique three-dimensional open Ga framework with parallel straight tunnels. In the tunnels, inserted are arrays of the RE atoms together with interpenetrated monoatomic RE-Ga-Ge planes. A complex disordered arrangement of the RE and Ga atoms is observed in the monoatomic plane. Depending on the extent of disorder, the crystal structure could be presented either in a sub-cell (no ordering) or in a super-cell (partial ordering). Single-crystal X-ray data for Ce₃Ga₉Ge sub-structure: space group Immm, Z=2, cell parameters a=4.3400(12) Å; b=10.836(3) Å; and c=11.545(3) Å; super-structure: space group Cmma, Z=8, cell parameters a=8.680(3) Å; b=23.090(7) Å; and c=10.836(3) Å. The refinement based on the full-matrix least squares on F_o²[I>2σ(I)] converged to final residuals R₁/wR₂=0.0226/0.0528 and 0.0729/0.1569 for the sub- and super-structures, respectively. The relationship between the disordered sub-structure and partially ordered super-structure is discussed. Magnetic susceptibility measurements show Curie-Weiss behavior at the temperatures above 30 K with the negative Weiss constants Θ=−49(1) and−7.7 K for Gd and Ce analogs, respectively. An antiferromagnetic transition is observed in the Gd analog at T_N=26.1 K. The μ_eff obtained for both analogs is close to the RE³⁺ free-ion value.