亚稳态分子间复合物反应机理研究

亚稳态分子间复合物（metastable intermolecular composite,MIC）由于具有超高反应燃烧速率及能量释放速率、高体积能量密度、低扩散距离和绿色环保等优点,在微型含能器件、火箭推进剂和绿色火工药剂等军用领域展现了很好的应用潜力。其反应机制与传统的含能材料不同,且具有超高速反应的瞬时性及复杂性,对其反应机理仍然缺乏清晰的认识,这限制了其应用研究的进展。本文对近年来亚稳态分子间复合物的反应机理研究进行综述,重点讨论具有代表性的“金属-氧翻转机理”和“预点火-熔结机理”。对于MIC材料的反应机理研究,本文主要从实验研究、理论模型研究和数值模拟研究三个方面进行分析。改性MIC材料是对材料性能进行调控的重要手段,是目前及未来的重要发展趋势之一,在论文最后对其反应机理做了重点叙述。通过对当前研究现状的归纳与分析,给出了当前的重要研究成果以及研究中出现的问题,并对未来的研究发展趋势进行了展望。     

热超声倒装焊在制作大功率GaN基LED中的应用

设计了适合于倒装的大功率GaN基LED芯片结构,在倒装基板硅片上制作了金凸点,采用热超声倒装焊接(FCB)技术将芯片倒装在基板上.测试结果表明获得的大面积金凸点连接的剪切力最高达53.93 g/bump,焊接后的GaN基绿光LED在350 mA工作电流下正向电压为3.0 V.将热超声倒装焊接技术用于制作大功率GaN基LED器件,能起到良好的机械互连和电气互连.     

一种基于新度量准则的极化码SCLF译码算法

为了解决串行抵消(Successive Cancellation,SC)译码算法在中短码长情况下译码性能不佳的问题,在SC译码算法的基础上增加路径列表和比特翻转方法得到一种改进的串行抵消列表翻转(Successive Cancellation List Flip,SCLF)译码算法.该算法利用比特翻转构建最不可靠的信息位集合,称为翻转集合(Flipping Set,FS),同时提出一种新的度量法则来缩小FS的范围、提高FS的准确率.仿真结果表明,随着信噪比的增大,所提出的SCLF译码算法误块率(Block Error Rate,BLER)有较大提升,当BLER为10-3时,SCLF(码长N=256,列表大小L=8)译码算法的增益比SC(N=256)译码算法提升了 0.55 dB;当BLER为10-4时,SCLF(N=256,L=8)译码算法的增益比CA-SCL(N=256,L=8)译码算法提升了 0.22 dB;当BLER为10-5时,SCLF(N=256,L=16)译码算法的增益比CA-SCL(N=256,L=16)译码算法提升了 0.17 dB.     

Stability of Flip-Chip Interconnects Assembled with Al/Ni(V)/Cu-UBM and Eutectic Pb-Sn Solder During Exposure to High-Temperature Storage

The thermal stability of flip-chip solder joints made with trilayer Al/Ni(V)/Cu underbump metalization (UBM) and eutectic Pb-Sn solder connected to substrates with either electroless Ni(P)-immersion gold (ENIG) or Pb-Sn solder on Cu pad (Cu-SOP) surface finish was determined. The ENIG devices degraded more than 50 times faster than the Cu-SOP devices. Microstructural characterization of these joints using scanning and transmission electron microscopy and ion beam microscopy showed that electrical degradation of the ENIG devices was a direct result of the conversion of the as-deposited Ni(V) barrier UBM layer into a porous fine-grained V₃Sn-intermetallic compound (IMC). This conversion was driven by the Au layer in the ENIG surface finish. No such conversion was observed for the devices assembled on Cu-SOP surface finish substrates. A resistance degradation model is proposed. The model captures changes from a combination of phenomena including increased (1) intrinsic resistivity, (2) porosity, and (3) electron scattering at grain boundaries and surfaces. Finally, the results from this study were compared with results found in a number of published electromigration studies. This comparison indicates that degradation during current stressing in the Pb-Sn bump/ENIG system is in part due to current-crowding-induced Joule heating and the thermal gradients that result from localized Joule heating.     

反射式倒装对1 300 nm激光器性能改善的分析

对AlGaInAs多量子阱1 300 nm FP激光器进行反射式倒装封装,在热沉上靠近激光器出光端面约10~20 μm的区域采用Au反射层,对器件垂直方向出光进行反射。测试结果显示,与常规封装相比,采用这种结构封装芯片垂直发散角从34.5°降低至17°,器件单模光纤的平均耦合功率从1 850 μW提高至2 326 μW,耦合效率从21.1%提高到26.5%。对两种激光器进行光电参数的测量,结果表明：与常规封装器件相比,采用反射式倒装结构器件的饱和电流从135 mA提高至155 mA,饱和输出功率从37 mW提高至42 mW,热阻从194 K/W降低至131 K/W。最后对两种器件在95℃环境温度、100 mA电流下进行加速老化实验,老化结果显示：在老化条件下,器件衰退系数从常规封装的4.22×10^-5降低至1.06×10^-5,寿命从5 283 h提高至21 027 h。     

关于反中心对称矩阵的某些性质探讨

利用反中心对称矩阵的定义以及翻转矩阵等技巧,给出了反中心对称矩阵的伴随矩阵、特征值及特征向量的一些新结论.     

Periodic solutions and flip bifurcation in a linear impulsive system

In this paper, the dynamical behaviour of a linear impulsive system is discussed both theoretically and numerically. The existence and the stability of period-one solution are discussed by using a discrete map. The conditions of existence for flip bifurcation are derived by using the centre manifold theorem and bifurcation theorem. The bifurcation analysis shows that chaotic solutions appear via a cascade of period-doubling in some interval of parameters. Moreover, the periodic solutions, the bifurcation diagram, and the chaotic attractor, which show their consistence with the theoretical analyses, are given in an example.     

Temperature and current-density distributions in flip-chip solder joints with Cu traces

Three-dimensional simulation was performed to investigate the temperature and current density distribution in flip-chip solder joints with Cu traces during current stressing. It was found that the Cu traces can reduce the Joule heating effect significantly at high stressing currents. When the solder joints were stressed by 0.6 A, the average temperature increases in solder bumps with the Al traces was 26.7°C, and it was deceased to 18.7°C for the solder joint with the Cu traces. Hot spots exist in the solder near the entrance points of the Al or Cu traces. The temperature increases in the hot spot were 29.3°C and 20.6°C, for solder joints with the Al traces and Cu traces, respectively. As for current density distribution, the maximum current density inside the solder decreased slightly from 1.66×10⁵ A/cm² to 1.46×10⁵ A/cm² when the Al traces were replaced by the Cu traces. The solder joints with the Cu traces exhibited lower Joule heating and current crowding effects than those with the Al traces, which was mainly attributed to the lower electrical conductivity of the Cu traces. Therefore, the solder joints with the Cu traces are expected to have better electromigration resistance.     

在挠性印制板中埋嵌无源和有源元件

文章介绍了在挠性印制板中埋嵌无源和有源元件的方法。通过化学镀Ni(P)电阻可以实现薄膜电阻的埋嵌,并能保证一定的弯折性。通过对芯片进行背面减薄和倒装连接,可以实现有源芯片的埋嵌。随后还对埋嵌元件的可靠性进行了测试。     

一种研究自旋翻转散射效应的新方法

金属中自旋翻转散射长度远长于电子平均自由程，近来关于自旋翻转散射效应的研究主要集中于扩散区域．文章作者提出了一种使用双势垒磁性隧道结来研究纳米尺度结构中弹道区域的自旋翻转散射效应的新方法．这种方法可以从磁电输运性质的测量，得出中间隔离层中的自旋翻转散射效应的温度和偏压关系，进一步可以得出诸如电子平均自由程和自旋翻转散射长度等自旋散射信息，以及中间层的态密度和量子阱信息．