New developments in CdTe and CdZnTe detectors for X and γ-ray applications

There has been considerable recent progress in II-VI semiconductor material and in methods for improving performance of the associated radiation detectors. New high resistivity CdZnTe material, new contact technologies, new detector structures, new electronic correction methods have opened the field of nuclear and x-ray imaging for industrial and medical applications. The purpose of this paper is to review new developments in several of these fields. In addition, we will present some recent results at LETI concerning first the CdTe 2-D imaging system (20 × 30 mm² with 400 × 600 pixels) for dental radiology and second the CdZnTe fast pulse correction method applied to a 5 × 5 × 5 mm³ CdZnTe detector (energy resolution = 5% for detection efficiency of 85% at 122 keV) for medical imaging.     

带限信号高频重建的一种新的正则外推算法

本文提出生种新的带限信号的外推方法，该方法能够很好地抑制噪声干扰，且计算复杂性较低，本文给出算法，证明了收敛性，最后给出了误差计算机实验结果。     

Ba（n，x）~（134）Cs，~（134）Ba（n，2n）~（133）Ba，

用中子活化法相对于５４Ｆｅ（ｎ，Ｐ）５４Ｍｎ反应，在１３．５０—１４．８０ＭｅＶ中子能区测量了Ｂａ（ｎ，ｘ）１３４Ｃｓ，１３４Ｂａ（ｎ，２ｎ）１３３Ｂａ，１４０Ｃｅ（ｎ，２ｎ）１３９Ｃｅ，１４２Ｃｅ（ｎ，２ｎ）１４１Ｃｅ和２３Ｎａ（ｎ，２ｎ）２２Ｎａ的反应截面．并将所测的结果和其他作者的结果进行了比较，中子能量是用９０Ｚｒ（ｎ，２ｎ）８９ｍ＋ｇＺｒ反应和９３Ｎｂ（ｎ，２ｎ）９２ｍＮｂ反应截面比法测定的。     

Vibrational control of crystal growth from liquid phase

Modeling and numerical simulations of the convective flows induced by the vibration of the monocrystal during crystal growth have been performed for two configurations simulating the Cz and FZ methods. This permitted to emphasize the role of different vibrational mechanisms in the formation of the average flows. It is shown that an appropriate combination of these mechanisms can be used to counteract the usual convective flows (buoyancy- and/or thermocapillary-driven) inherent to crystal growth processes from the liquid phase. While vibrational convection is rather complex due to these identified mechanisms, the new modeling used in the present paper opens up very promising perspectives to efficiently control heat and mass transfer during real industrial applications of crystal growth from the liquid phase.     

分形粗糙面的电磁散射－扩展边界条件

用扩展边界条件方法对分形粗糙良导体面及介质面的电磁散射问题进行了分析。用推广的Floquet模式，在分界面处将场分量用Fourier级数展开，根据边界条件及扩展边界条件得到了水平极化和垂直极化散射场的幅度分量的表达式。用其它近似方法（Kirchhoff和Rayleigh方法）及能量守恒准则验证了此方法的有效性。     

布里奇曼法生长碲镉汞晶体的固液界面形态研究

文中综述了布里奇曼法及加速坩埚旋转技术的布里奇曼法生工碲镉汞晶体过程中固液界面形态的研究结果，简单讨论了固液界面形态对组分分布的影响，并将两种技术所得的组分分布结果进行了比较，在分析影响固液界面形态因素的基础上，认为加速坩埚旋转技术是目前改善固液界面形态的有效方法。     

β—BBO晶体的电光性能

用干涉法测量了β－ＢＢＯ晶体的电光系数：γ２２＝２．６，γ３３＝０．２３，γ３１＝０．２５，γ５１＝－３．５×１０－１２ｍ／Ｖ。结果表明如果在Ｙ方向加电场，Ｚ方向通光，β—ＢＢＯ晶体可能制作成有应用价值的光开关。     

A complete boundary integral formulation for compressible Navier–Stokes equations

A complete boundary integral formulation for compressible Navier–Stokes equations with time discretization by operator splitting is developed using the fundamental solutions of the Helmholtz operator equation with different order. The numerical results for wall pressure and wall skin friction of two‐dimensional compressible laminar viscous flow around airfoils are in good agreement with field numerical methods. Copyright © 2004 John Wiley & Sons, Ltd.     

ZnO压敏陶瓷最佳掺杂含量的理论计算

从对电子薄膜材料研究中得到的最佳掺杂含量定量理论推广到ZnO陶瓷材料。该理论建立了电子薄膜材料的某一物理性能与晶体结构、制备方法和掺杂剂含量之间的联系，给出了一个能够拟合实验曲线的具有确定物理意义的抛物线方程。该方程的极值点确定了最佳掺杂含量与晶体结构和制备方法之间的定量关系，进而得到了一个掺杂最佳含量的表达式。系统地分析了ZnO压敏陶瓷的掺杂改性的实验结果，应用此表达式定量计算了ZnO压敏陶瓷的最佳掺杂含量，定量计算的结果与实验数据相符合。该理论也适用于其他薄膜材料最佳掺杂含量的理论计算。     

On the excitation of a closely spaced array by a line source

An infinite row of periodically spaced, identical rigid circularcylinders is excited by an acoustic line source which is parallelto the generators of the cylinders. A method for calculatingthe scattered field accurately and efficiently is presented.When the cylinders are sufficiently close together, Rayleigh–Blochsurface waves that propagate energy to infinity along the arrayare excited. An expression is derived which enables the amplitudesof these surface waves to be computed without requiring thesolution to the full scattering problem.