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991.
从蛙虹彩病毒(Rana gryliovirus,RGV)基因组中克隆了含凋亡相关结构域的新基因-cop(Caspaserecruit ment domain only protein,COP)基因的全部编码区,成功构建了重组表达载体,进行了原核表达,并在鲤鱼上皮瘤细胞(Epithelioma papulosumcyprini,EPC)中进行了亚细胞定位.序列分析表明,RGVcop基因全长288 bp,编码一个长为95 aa,分子量为10.4×103的推定蛋白.二级结构预测表明其含有5个α螺旋.同源性比对分析显示,RGVcop与其他6株虹彩病毒及人类cop相关蛋白同源性最高为94%,最低为33%.重组原核表达质粒pET28a-COP转化大肠杆菌BL21后,经IPTG诱导表达,获得一条约14×103的融合蛋白.重组真核表达质粒pEGFPN3-COP转染EPC细胞,经DAPI染色后,在荧光显微镜下观察显示重组蛋白在整个细胞中均有分布.  相似文献   
992.
Crossed modules have longstanding uses in homotopy theory and the cohomology of groups. The corresponding notion in the setting of categorical groups, that is, categorical crosses modules, allowed the development of a low-dimensional categorical group cohomology. Now, its relevance is also shown here to homotopy types by associating, to any pointed CW-complex (X,∗), a categorical crossed module that algebraically represents the homotopy 3-type of X.  相似文献   
993.
Thin films of a-SiOx (0 < x < 2) were prepared by reactive r.f. magnetron sputtering from a polycrystalline-silicon target in an Ar/O2 gas mixture. The oxygen partial pressure in the deposition chamber was varied so as to obtain films with different values of x. The plasma was monitored, during depositions, by optical emission spectroscopy (OES) system. Energy dispersive X-ray (EDX) measurements and infra-red (IR) spectroscopy were used to study the compositional and structural properties of the deposited layers.Structural modifications of SiOx thin films have been induced by UV photons’ bombardment (wavelength of 248 nm) using a pulsed laser. IR spectroscopy and X-ray photoemission spectroscopy (XPS) were used to investigate the structural changes as a function of x value and incident energy. SiOx phase separation by spinodal decomposition was revealed. The IR peak position shifted towards high wavenumber values when the laser energy is increased. Values corresponding to the SiO2 material (only Si4+) have been found for laser irradiated samples, independently on the original x value. The phase separation process has a threshold energy that is in agreement with theoretical values calculated for the dissociation energy of the investigated material.For high values of the laser energy, crystalline silicon embedded in oxygen-rich silicon oxide was revealed by Raman spectroscopy.  相似文献   
994.
Ferroelectric thin films form an equilibrium domain structure compatible with their respective crystallographic symmetry. In tetragonal (111) PZT, 90° domains prevail; in (pseudo-tetragonal) (100) SBT both 90° and 180° domains are present. The size of 90° domains has been measured for e.g., PZT as slabs of 15 nm width. Domain size is a result of stress minimization in the film during the paraelectric (PE) → ferroelectric (FE) transition. A precise and regular domain pattern for (111) PZT and (100) SBT films has been investigated in detail by TMSFM. Single domains can be addressed mechanically with the tip of an AFM. Such single domain switching corresponds to a data storage density of 200 Gbit/inch2. Applications of ferroelectric and high- paraelectric materials for e.g., non-volatile data storage replacing DRAM devices or as sensors in infrared cameras are increasingly becoming popular.  相似文献   
995.
We give a small functorial algebraic model for the 2-stage Postnikov section of the K-theory spectrum of a Waldhausen category and use our presentation to describe the multiplicative structure with respect to biexact functors.  相似文献   
996.
In this paper we study random orderings of the integers with a certain invariance property. We describe all such orders in a simple way. We define and represent random shuffles of a countable set of labels and then give an interpretation of these orders in terms of a class of generalized riffle shuffles.  相似文献   
997.
This paper examines the steady state behaviour of a batch arrival queue with two phases of heterogeneous service along and Bernoulli schedule vacation under multiple vacation policy, where after two successive phases service or first vacation the server may go for further vacations until it finds a new batch of customer in the system. We carry out an extensive stationary analysis of the system, including existence of stationary regime, queue size distribution of idle period process, embedded Markov chain steady state distribution of stationary queue size, busy period distribution along with some system characteristics.  相似文献   
998.
The experimental data from Mössbauer spectroscopy and magnetic measurements are presented as functions of the temperature and external magnetic field for a B2-type ordered Fe 66 Al 34 alloy.  相似文献   
999.
R J Sengwa  Sonu Sankhla 《Pramana》2006,67(2):375-381
Dielectric relaxation study of the binary mixtures of poly(vinyl pyrrolidone) (PVP) (Mw=24000, 40000 and 360000 g mol−1) with ethyl alcohol (EA) and poly(ethylene glycol)s (PEGs) (Mw=200 and 400 g mol−1) in dilute solutions of dioxane were carried out at 10.1 GHz and 35°C. The relaxation time of PVP-EA mixtures was interpreted by the consideration of a wait-and-switch model in the local structure of self-associated ethyl alcohol molecules and also the PVP chain length as a geometric constraint for the reorientational motion of ethyl alcohol molecules. The formation of complexes and effect of PVP chain length on the molecular dynamics, chain flexibility and stretching of PEG molecules in PVP-PEG mixtures were explored from the comparative values of dielectric relaxation time. Further, relaxation time values in dioxane and benzene solvent confirm the viscosity independent molecular dynamics in PVP-EA mixtures but the values vary significantly with the non-polar solvent environment.  相似文献   
1000.
Summary The normal incidence reflectivity spectrum of excitons in GaAs/Ga1−x Al x As multiple quantum wells is calculated within the local response approximation. It is shown that the reflectivity lineshape strongly depends on the sample geometry. Using realistic parameters of a multiple quantum well structure, we obtain an excellent fit of the experimental reflectivity curve, thus giving exciton energies, oscillator strengths and exciton broadening parameters.
Riassunto Lo spettro di riflettività ad incidenza normale degli eccitoni nei pozzi quantistici multipli di GaAs/Ga1−x Al x As è calcolato nell’ambito dell’approssimazione locale. Si mostra con la forma della linea di riflettività dipende in gran misura dalla forma geometrica del campione. Usando parametri realistici di una struttura a pozzi quantistici multipli, si ottiene un’ottima approssimazione della curva di riflettività sperimentale, che fornisce così energie eccitoniche, forze dell’oscillatore e parameri di ampliamento eccitonico.

Резюме В рамках приближения линейного отклика вычисляется спекрт отражательной способности экситонов при нормальном падении для множественных квантовых ям в GaAs/Ga1−x Al x As. Показывается, что форма линии отражательной способности сильно зависит от геометрии образца. Используя реалистические параметры структуры множественных квантовых ям, мы получаем хорошее соответствие с экспериментальной кривой для отражательной способности. Получаются энергии экситонов, силы осцилляторов и парам⪟тры экситонного уширения.
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