CdZnTe核探测器的蒙特卡罗模拟的初步研究

以CdZnTe核探测器的工作原理为依据,探测器内反应的随机性和反应产生的电子空穴对数目的统计规律为物理模型,应用Visual C + + 自行编制了蒙特卡罗模拟软件.模拟了γ射线在CdZnTe探测器中的响应能谱,并将模拟结果与实际器件的测试结果进行了比较讨论.模拟能谱与实际测得的能谱的主峰符合较好.此外,通过分析⁵⁷Co源辐照下探测效率与器件厚度的关系,可以推测探测效率达到最大时所对应CdZnTe探测器的理想厚度     

电路板故障诊断中神经网络信息融合技术的应用

将信息融合技术应用到导弹电子设备的电路板故障诊断之中．提出了一种基于红外热成像实验的温度故障隶属度函数构造形式以及改进的BP神经网络算法。进行了BP神经网络信息融合故障诊断的实验研究．从结果看信息融合能较好地解决电路板元件故障诊断的不确定性问题。     

影响产生均匀等离子体状态的几个因素

 用数值模拟方法研究利用辐射加热来产生均匀等离子体状态,它可被用来测量元素的辐射不透明度,校验辐射不透明度理论。研究了在辐射加热铁的“三明治”型靶时影响生成均匀等离子体状态的几个重要因素（样品厚度、CH膜厚度和辐射源）所起的作用，研究发现，当铁等离子体通过热传导达到均匀状态时，其尺度必须与此时的传热距离相当，从而定出铁样品的厚度；低Z介质CH膜对铁等离子体有明显的箍束作用，调整CH膜的厚度可以调节所产生的等离子体状态；调整不同方向上的CH膜厚度，可以控制铁等离子体的膨胀方向，使它尽可能地达到一维膨胀，使得反推出的等离子体密度可以更加准确；样品的种类、厚度以及外面的低Z介质厚度决定了在某时刻能获得的等离子体状态，以及为产生此等离子体状态所需的最低辐射能。     

Simplified analytic solutions and a novel fast algorithm for Yb-doped double-clad fiber lasers

In this paper, continuous wave Yb³⁺-doped double-clad fiber lasers (DCFLs) with linear-cavity are investigated theoretically and numerically using the rate equations. Under the steady state conditions, the simplified analytic solutions of Yb³⁺-doped DCFLs under considering the scattering loss are deduced in the strongly pump condition. Compared with the known analytic solutions in published literatures, our analytic solutions are more accurate, especially, at higher reflectivity of output mirror. In addition, a fast and stable algorithm based on the Newton-Raphson method is proposed to simulate numerically Yb³⁺-doped DCFLs. The results by simplified analytic solutions are in good agreement with those by the numerical simulation. Moreover, we have performed the optimization of an Yb³⁺-doped DCFL using the simplified analytic solutions and the numerical simulations, respectively.     

Estimating tail probabilities of heavy tailed distributions with asymptotically zero relative error

Efficient estimation of tail probabilities involving heavy tailed random variables is amongst the most challenging problems in Monte-Carlo simulation. In the last few years, applied probabilists have achieved considerable success in developing efficient algorithms for some such simple but fundamental tail probabilities. Usually, unbiased importance sampling estimators of such tail probabilities are developed and it is proved that these estimators are asymptotically efficient or even possess the desirable bounded relative error property. In this paper, as an illustration, we consider a simple tail probability involving geometric sums of heavy tailed random variables. This is useful in estimating the probability of large delays in M/G/1 queues. In this setting we develop an unbiased estimator whose relative error decreases to zero asymptotically. The key idea is to decompose the probability of interest into a known dominant component and an unknown small component. Simulation then focuses on estimating the latter ‘residual’ probability. Here we show that the existing conditioning methods or importance sampling methods are not effective in estimating the residual probability while an appropriate combination of the two estimates it with bounded relative error. As a further illustration of the proposed ideas, we apply them to develop an estimator for the probability of large delays in stochastic activity networks that has an asymptotically zero relative error.      

双对数模型对模型模拟误差的放缩问题探讨

对双对数模型lg Y=a0+a1lg X1+a2lg X2+…+anlg Xn与其对应的指数模型y=c0xa11xa22…xann的模拟相对误差的关系进行了探讨,指出双对数模型具有放大和缩小指数模型相对误差的特性.对二者的关系进行了理论推导和实例验证,并给出了二者的定量关系式.     

Memory management optimization problems for integrated circuit simulators

In hardware design, it is necessary to simulate the anticipated behavior of the integrated circuit before it is actually cast in silicon. As simulation procedures are long due to the great number of tests to be performed, optimization of the simulation code is of prime importance. This paper describes two mathematical models for the minimization of the memory access times for a cycle-based simulator.An integrated circuit being viewed as a directed acyclic graph, the problem consists in building a graph order on the vertices, compatible with the relation order induced by the graph, in order to minimize a cost function that represents the memory access time. For both proposed cost functions, we show that the corresponding problems are NP-complete. However, we show that the special cases where the graphs are in-trees or out-trees can be solved in polynomial time.     

各向同性湍流中颗粒引起湍流变动的直接模拟

本文通过直接数值模拟对均匀各向同性湍流中颗粒对湍流的变动作用进行了研究.颗粒相的体积分数很小而质量载荷足够大,以至于颗粒之间的相互作用可以忽略不计,而重点考虑颗粒与湍流间能量的交换。颗粒对湍流的反向作用使得湍动能的耗散率增强,以至于湍动能的衰减速率增大.湍动能的衰减速率随颗粒惯性的增大而增大。三维湍动能谱显示,颗粒对湍动能的影响在不同的尺度上是不均匀的。在低波数段,流体带动颗粒,而高波数段则相反.     

透镜初级球差的横向剪切干涉条纹研究

利用玻璃平行平板构成简单的横向剪切干涉仪可以观察到单薄透镜形成的准直光束的剪切干涉条纹,由干涉条纹分布求出对应的几何像差和离焦量.用焦距为190 mm的单薄透镜做实验,实验结果与计算机模拟结果符合,说明可以从剪切干涉条纹的分布求出透镜的轴向调整误差和初级球差.     

Lateral space-charge effects on ballistic electron transport across graded heterojunctions

Hot electron transport across graded compound semiconductor heterojunctions has been explored using a two-dimensional formulation of the self-consistent ensemble Monte Carlo method. The Al_xGa_1-xAs/GaAs heterojunction imbedded into a vertical field effect transistor with two ohmic contacts (source, drain) and two lateral Schottky gates has been used as an example. Lateral space charges modulated by the gates are shown to control ballistic injection of electrons over the heterojunction under steady state conditions. The transient response to a gate pulse is found to be determined by carrier transit from the heavily doped source contact region into the channel. A conceptual one-dimensional section model is used to explain the Monte Carlo results.