Ni、Mo共掺杂对SnO2材料性能影响的仿真研究

针对AgSnO₂触头材料存在的不足,采用基于密度泛函理论的第一性原理对SnO₂、Ni单掺杂、Mo单掺杂以及Ni-Mo共掺杂SnO₂材料进行了电性能与力学性质的研究,计算了各体系的形成能、能带结构、态密度、弹性常数等各项参数。结果表明,掺杂后的材料可以稳定存在,且仍为直接带隙半导体材料。与未掺杂相比,掺杂后体系的能带结构带隙值减少,其中Ni-Mo共掺杂时的带隙值最小,载流子跃迁所需能量减少,极大地改善了SnO₂的电性能;由弹性常数计算了剪切模量、体积模量、硬度等参数,其中Ni-Mo共掺杂时的硬度大幅降低,韧性增强,有利于AgSnO₂触头材料后续加工成型,且其普适弹性各向异性指数最小,不易形成裂纹。综合各项因素,Ni-Mo共掺杂能够很好地改善SnO₂的性能,为触头材料的发展提供了理论指导。     

Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors

This study presents the construction and dielectric properties investigation of atomic-layer-deposition Al₂O₃/TiO₂/HfO₂ dielectric-film-based metal–insulator–metal (MIM) capacitors. The influence of the dielectric layer material and thickness on the performance of MIM capacitors are also systematically investigated. The morphology and surface roughness of dielectric films for different materials and thicknesses are analyzed via atomic force microscopy (AFM). Among them, the 25 nm Al₂O₃-based dielectric capacitor exhibits superior comprehensive electrical performance, including a high capacitance density of 7.89 fF·µm⁻², desirable breakdown voltage and leakage current of about 12 V and 1.4 × 10⁻¹⁰ A·cm⁻², and quadratic voltage coefficient of 303.6 ppm·V⁻². Simultaneously, the fabricated capacitor indicates desirable stability in terms of frequency and bias voltage (at 1 MHz), with the corresponding slight capacitance density variation of about 0.52 fF·µm⁻² and 0.25 fF·µm⁻². Furthermore, the mechanism of the variation in capacitance density and leakage current might be attributed to the Poole–Frenkel emission and charge-trapping effect of the high-k materials. All these results indicate potential applications in integrated passive devices.     

高强钢筋混凝土单向板在非接触爆炸下的抗爆性能研究

钢筋混凝土(RC)单向板是桥梁建设的重要组成部分. 对6块高强RC单向板进行非接触爆炸试验, 研究HRB400、HRB500和HTRB600高强RC单向板的抗爆性能, 分析爆炸后试件的破坏形态和参数. 结果表明 非接触爆炸下, 3种类型高强钢筋混凝土单向板的破坏形态相似, 单向板整体响应后出现弯曲破坏, 侧表面出现多条弯曲破坏裂缝; 在2.5kgTNT作用下的HTRB600高强RC单向板的裂缝数量和裂缝类型与2.1kgTNT作用下的HRB500高强RC单向板和1.7 kgTNT作用下的HRB400高强RC单向板差别不大, 相差范围在1条裂缝以内; HTRB600高强RC单向板在承受更大载荷时, 其平均加速度峰值比低载荷下HRB500、HRB400高强RC单向板分别增加45.1%和88.6%, 其抗弯承载力更好, 刚度更大.     

基于低通滤波器的含有非正弦无功功率的计量

目前对非正弦无功电能计量的研究还很不完善。为了能够准确地理解和计算非正弦电路的无功功率,导出了非正弦电路的无功功率的计算公式,分析了公式中每一项的物理意义,并提出了一种基于低通滤波器的含有非线性无功功率的计量方法。依据IEC1268标准的技术条件给出了两种无功测试方法测量误差的试验数据,从而得出了低通滤波器方法测量无功功率是一种较好的方法的结论。     

Compositional, structural, optical and electrical characterization of CulnTe2 grown by the tellurization of stoichiometric Cu and in in the liquid phase

A new method to grow single crystals with stoichiometry close to 1:1:2 of CuInTe₂, an important member of the Cu-III-VI₂ family of semiconductors is described. This consists of tellurization in the liquid phase of stoichiometric Cu and In and later solidification under directional freezing. It is found from energy dispersive spectroscopy that the ingots obtained with the evaporation temperature (T_t) of Te at 590 and 635°C were very close to the ideal stoichiometry 1:1:2. Samples of all ingots obtained with T_t between 530 and 690°C, as studied by x-ray and differential thermal analysis, were of single phase having chalcopyrite structure and p-type conductivity. Optical and electrical characterization of different ingots were made. The acceptor ionization energy E_A and the density of states effective mass m _p ^* of the holes are estimated from the temperature dependence of the hole concentration p in samples of different ingots. m _p ^* = (0.78 ± 0.02) m_e agrees quite well with the reported value. From a combined analysis of the variation of E_A with p^1/3 and the knowledge of molecularity and valence stoichiometry of each sample, it is established that the shallow acceptor level observed in different samples with E_A (0) ⋍ 30 meV is due to V_In.     

谈谈我校现代电工电子实验室的教学与开放

我校自动化学院电工电子实验中心相继建成了“ＥＤＡ开放实验室”,“ＣＡＤ／ＣＡＩ实验室”和“ＰＬＣ实验室”三个现代电工技术实验室,并于１９９７年相继投入教学与开放,本文结合我们参与现代电工技术实验室教学与开放的实践,谈谈我们的感受与体会．     

InGaN/GaN多量子阱LED的电特性研究

针对InGaN/GaN多量子阱LED,分析了占据能态高于势垒的载流子和低于势垒的载流子参与的电流输运机制,从而推导出对应能态电流输运机制下的电流-电压关系,以及理想因子与温度的变化规律.实验结果证实,在低注入强度下,由材料缺陷引入的深能级辅助隧穿输运机制占主导,电流电压特性符合相应的推导结果,随着注入强度的增大,参与扩散-复合输运机制的载流子逐渐增加,温度对输运机制的影响逐渐增大.     

大学物理实验RC电路时间常数的Multisim仿真测试

基于探索大学物理电学实验仿真技术的目的。采用Multisiml0仿真软件对RC电路时间常数参数进行了仿真实验测试。从RC电路电容充、放电时电容电压uc的表达式出发,分析了Mc与时间常数之间的关系,给出了几种Muhisim仿真测试时间常数的实验方案。仿真实验可直观形象地描述RC电路的工作过程及有关参数测试。将电路的硬件实验方式向多元化方式转移,利于培养知识综合、知识应用、知识迁移的能力,使电路分析更加灵活和直观。     

Hybrid Paper–Plastic Microchip for Flexible and High‐Performance Point‐of‐Care Diagnostics

A low‐cost and easy‐to‐fabricate microchip remains a key challenge for the development of true point‐of‐care (POC) diagnostics. Cellulose paper and plastic are thin, light, flexible, and abundant raw materials, which make them excellent substrates for mass production of POC devices. Herein, a hybrid paper–plastic microchip (PPMC) is developed, which can be used for both single and multiplexed detection of different targets, providing flexibility in the design and fabrication of the microchip. The developed PPMC with printed electronics is evaluated for sensitive and reliable detection of a broad range of targets, such as liver and colon cancer protein biomarkers, intact Zika virus, and human papillomavirus nucleic acid amplicons. The presented approach allows a highly specific detection of the tested targets with detection limits as low as 10² ng mL^?1 for protein biomarkers, 10³ particle per milliliter for virus particles, and 10² copies per microliter for a target nucleic acid. This approach can potentially be considered for the development of inexpensive and stable POC microchip diagnostics and is suitable for the detection of a wide range of microbial infections and cancer biomarkers.     

Cu材料激光表面强化研究

采用激光技术对Cu基材进行表面强化处理。使用扫描电镜(SEM)、电子能谱计(EDS)和X射线衍射仪(XRD)对强化表面进行显微组织和物相分析,并测试了样品的显微硬度、耐磨性能和导电性能。结果表明,激光强化层无裂纹,组织细小均匀、呈快速凝固特征,强化层具有较高的硬度(平均硬度为625HV0.1)和良好的耐磨性,其磨损失重仅为纯Cu基材的1/5,而激光表面强化使导电性略微降低。激光表面强化层硬度和耐磨性的提高可归因于颗粒强化、细晶强化和固溶强化的共同作用,而导电性的降低程度主要受稀释率的影响。