Thiol–norbornene materials: Approaches to develop high Tg thiol–ene polymers

The ability to prepare high T_g low shrinkage thiol–ene materials is attractive for applications such as coatings and dental restoratives. However, thiol and nonacrylated vinyl materials typically consist of a flexible backbone, limiting the utility of these polymers. Hence, it is of importance to synthesize and investigate thiol and vinyl materials of varying backbone chemistry and stiffness. Here, we investigate the effect of backbone chemistry and functionality of norbornene resins on polymerization kinetics and glass transition temperature (T_g) for several thiol–norbornene materials. Results indicate that T_gs as high as 94 °C are achievable in thiol–norbornene resins of appropriately controlled chemistry. Furthermore, both the backbone chemistry and the norbornene moiety are important factors in the development of high T_g materials. In particular, as much as a 70 °C increase in T_g was observed in a norbornene–thiol specimen when compared with a sample prepared using allyl ether monomer of analogous backbone chemistry. © 2007 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem 45: 5686–5696, 2007     

热分解法制备钛酸铅镧薄膜及其电性能研究

本文研究了用金属有机物热发解法制备ＰＬＴ８薄膜的工艺过程和基片对薄膜结构的影响，并且给出了铁电性能的测量结果。     

关于多项式系数微分方程复振荡理论的两个结果

本文证明了：如果ａ_ｋ－ｊ（ｊ＝１，…，ｋ）为多项式，ｄｅｇａ_ｋ－ｊ＝ｎ_ｋ－ｊ，存在某个ａ_ｋ－s（１≤ｓ≤ｋ）满足：当１≤ｊ＜ｓ时，ｎ_ｋ－ｊ／ｊ≤ｎ_ｋ－s／ｓ；当ｓ＜ｊ≤ｋ时，ｎ_ｋ－ｊ＜ｎ_ｋ－s－（ｊ－ｓ）．如果Ｆ≠０是整函数且满足σ（Ｆ）＝β＜（ｎ_ｋ－s＋ｓ）／ｓ，那么微分方程ｆ^（ｋ）＋ａ     

Crystallographic orientation dependence of the growth rate for GaAs low pressure organometallic vapor phase epitaxy

The complete crystallographic orientation dependence of the growth rate for GaAs low pressure organometallic vapor phase epitaxy (LPOMVPE) is determined using a previously described semi-empirical model. A set of LPOMVPE growth rate polar diagrams is presented for reactor temperatures near 550°C as well as near 700°C. Also, the variation of the growth rate polar diagrams as a function of process variables is given. The experimental data utilized in the semiempirical model was attained using a typical horizontal reactor LPOMVPE system and typical LPOMVPE process parameters.     

An infinite dimensional affine nil algebra with finite Gelfand-Kirillov dimension

The famous 1960's construction of Golod and Shafarevich yields infinite dimensional nil, but not nilpotent, algebras. However, these algebras have exponential growth. Here, we construct an infinite dimensional nil, but not locally nilpotent, algebra which has polynomially bounded growth.

     

The Elimination of Grains and Grain Boundaries in Grain Growth

The topological changes that occur during coarsening of 2D and 3Dcellular structures, such as polycrystals, areinvestigated. Particular attention is given to the elimination ofgrain boundaries and grains with more than the minimum number oftopological elements. A thermodynamic criterion is introduced tofind out which topological transformations are favoured, based on theevaluation of the Gibbs free energy of the initial and finalconfigurations. In general, elimination of grains is possible only ifthe number of their neighbours is below a critical value, which maybe affected by geometry.     

Study on the dispersion characteristic of the plasma-loaded relativistic BWO

The dispersion characteristic of the plasma-loaded relativistic backward wave oscillator has been analyzed. The theoretical model has been established and the numerical calculations accord with the experimental results, which provides some useful suggestions on the designing of slow-wave structure of BWO.     

New mechanisms in photo-assisted MOVPE of II-VI semiconductors

The first detailed comparison has been made of the metalorganic vapor phase epitaxy growth rates of CdTe, ZnTe, and ZnSe, measured in situ with laser reflectometry. The comparison also includes the photo-assisted growth with visible radiation from an argon ion laser. Using a standard Group II precursor (DMCd or DMZn.TEN) partial pressure of 1.5 × 10⁻⁴ atm, VI/II ratio of 1 and DIPM (M = Te, Se) the maximum growth rates are in the region of 10 to 15 AU/ s. Decrease in growth rates of ZnTe at higher temperatures or higher laser powers have been attributed to the desorption from the substrate of unreacted Te precursor. The behavior of DTBSe is quite different from DIPSe for both pyrolytic and photo-assisted growth. The maximum growth rate is around 1 AU/ s with very little photo-enhancement, except at 300°C. Secondary ion mass spectroscopy analysis of hydrogen concentration in the ZnSe layers shows high concentrations, up to 5.9 × 10¹⁹ atoms cm⁻³ for DTBSe grown ZnSe under pyrolytic conditions. These results show that the growth kinetics play an important part in the incorporation of hydrogen and passivation of acceptor doped material.