VLSI金属互连线电迁移噪声检测敏感性的逾渗模拟

在电迁移物理机制的基础上结合逾渗理论,建立了一种金属互连线电迁移的逾渗模型。基于该模型,采用蒙特卡罗方法模拟了超大规模集成电路（VLSI）金属互连线电迁移过程中电阻和低频噪声参数的变化规律。结果表明,与传统的电阻测量方法相比,低频噪声表征方法对电迁移损伤更敏感,检测的效率更高。该研究结果为低频噪声表征VLSI金属互连线电迁移损伤的检测方法提供了理论依据。     

Electromigration Behavior in Sn-37Pb and Sn-3.0Ag-0.5Cu Flip-Chip Solder Joints under High Current Density

The electromigration of conventional Sn-37Pb and Pb-free Sn-3.0Ag-0.5Cu (in wt.%) solder bumps was investigated with a high current density of 2.5 × 10⁴ A/cm² at 423 K using flip-chip specimens comprised of an upper Si chip and a lower bismaleimide triazine (BT) substrate. Electromigration failure of the Sn-37Pb and Sn-3.0Ag-0.5Cu solder bumps occurred with complete consumption of electroless Ni immersion Au (ENIG) underbump metallization (UBM) and void formation at the cathode side of the solder bump. Finite element analysis and computational simulations indicated high current crowding of electrons in the patterned Cu on the Si chip side, whereas the solder bumps and Cu line of the BT substrate had a relatively low density of flowing electrons. These findings were confirmed by the experimental results. The electromigration reliability of the Sn-3.0Ag-0.5Cu solder joint was superior to that of Sn-37Pb.     

热循环条件下Sn基钎料接头电迁移行为研究

通过电迁移和热疲劳循环实验,研究了热循环和高电流密度耦合作用下Sn58Bi和Sn3.0Ag0.5Cu钎料焊接接头的失效形式。实验结果表明,在通电和高低温冲击的耦合作用下,两种钎料接头的失效都发生在升温阶段。热循环导致接头内部裂纹的萌生和扩展,导致局部电流密度持续增大,加速了电迁移的发生,最终导致焊点失效。在热电耦合作用下,Sn58Bi钎料接头的使用寿命要长于Sn3.0Ag0.5Cu钎料接头的使用寿命。     

Electromigration-induced UBM consumption and the resulting failure mechanisms in flip-chip solder joints

Eutectic PbSn flip chip solder joint was subjected to 5×10³ A/cm² current stressing at 150°C and 3.5 × 10⁴ A/cm² current stressing at 30°C. The under bump metallurgy (UBM) on the chip was sputtered Ni/Cu, and the substrate side was a thick Cu trace. It was shown through in-situ observation that the local temperature near the entrance of electrons from the Al interconnect to the solder became higher than the rest of the joint. The accelerated local Ni UBM consumption near the entrance was also observed. Once the Ni was consumed at a location, a porous structure formed, and the flow of the electrons was blocked there. It was found that the formation of the void and the formation of the porous structure were competing with each other. If the porous structure formed first, then the void would not be able to nucleate there. On the other hand, if the void could nucleate before the UBM above lost its conductivity, then the joint would fail by the void formation-and-propagation mechanism.     

Effect of UBM Thickness on the Mean Time to Failure of Flip-Chip Solder Joints under Electromigration

Flip-chip solder joints with Cu/Ni/Al underbump metallurgy (UBM) on the chip and an Au/Ni surface finish on the substrate were studied under current stressing at an ambient temperature of 150°C. Three different Ni thicknesses in the Cu/Ni/Al UBM (0.3, 0.5, and 0.8 μm) were used in order to investigate the effect of the Ni thickness on reliability. The solder used was eutectic Pb-Sn, and the applied current density was 5 × 10³ A/cm². The results show that the combined effect of current crowding and the local Joule heating near the entry points of electrons into the joints induced asymmetric Ni UBM consumption. Once the Ni was exhausted in a certain region, this region became nonconductive and the flow of electrons was diverted to the neighboring region. This neighboring region then became the place where electrons entered the joint, and the Ni UBM there was consumed at an accelerated rate. This process repeated itself, and the Ni-depleted region continued to extend, creating an ever larger nonconductive region. The solder joints eventually failed when the nonconductive region extended across the entire contact window of the joints. This failure model supports the observation that joints with a thicker Ni tend to have a longer average lifetime.     

Electromigration in integrated circuits

We review the mechanism of integrated circuit failure known as “electromigration.” Electromigration is a physical wearout process that operates primarily in the on-chip interconnections of an integrated circuit. It is caused by the currents that run through those interconnections. The first part of the review introduces the founding principles of electromigration and the research history upon which those principles are based. The second part introduces and reviews the increasingly relevant issue of pulsed current electromigration, and the final part contains a relatively detailed review of a recent study of pulsed current electromigration.     

陶瓷封装倒装焊器件Sn-Pb微焊点的电迁移行为

高密度陶瓷封装倒装焊器件的焊点尺寸已降低至100μm以下,焊点电流密度达到10~4 A/cm~2以上,由此引发的电迁移失效成为不可忽视的问题。以陶瓷封装菊花链倒装焊器件为研究对象,开展了Sn10Pb90、Sn63Pb37焊点热电环境可靠性评估试验,通过电连接检测及扫描电子显微镜(SEM)等方法对焊点互连情况进行分析。结果表明,Sn63Pb37焊点阴极侧金属间化合物(IMC)增长明显,表现出明显的极化现象,IMC厚度的平方与通电时间呈线性关系。通电时间达到576 h后Sn63Pb37焊点阴极侧产生微裂纹,而Sn10Pb90焊点在通电576 h后仍未出现异常,表现出优异的电迁移可靠性。研究结果对于直径100μm微焊点的陶瓷封装倒装焊器件的应用具有重要的意义。     

Current-Induced Phase Partitioning in Eutectic Indium-Tin Pb-Free Solder Interconnect

Structural changes from high-density electric currents were examined in a eutectic In-Sn/Cu interconnect. Under electrical loading, Sn and In migrated in opposite directions, creating a partition of the Sn- and In-rich phases between the anode and the cathode. At the anode, a net gain of Sn atoms resulted in the formation of massive, columnar hillocks on the surface, but a net loss of In led to dissolution and disappearance of the In-rich intermetallic layer. At the cathode, the exodus of Sn left valleys adjacent to the In-rich regions on the surface, while the amount of the In-rich phase grew, due to the net influx of In at the expense of the In-rich intermetallic layer.     

无铅焊料及其可靠性的研究进展

环保和微电子器件高度集成化的发展驱动了高性能无铅焊料的研究和开发。本文介绍了国内外对Sn-Ag,Sn-Zn,Sn-Bi,Sn-Sb和Sn-In系无铅焊料的发展现状及所取得的研究成果;列出了美国抗高温疲劳焊料研究计划筛选的七种抗热疲劳无铅焊料合金;对焊点的一般可靠性问题及无铅焊料引入的新的可靠性问题进行了归纳和讨论。