光纤制备中的外汽相沉积工艺研究

人们对光纤生产过程中外汽相沉积(OVD)工艺的沉积机理的研究已经有好多年，但实际生产过程中，很多因素都会影响沉积速率和效率。为此我们通过试验，研究了决定沉积速率和沉积效率的主要因素，如预制棒表面温度、SiCl4流量和SiO2颗粒的温度等。     

用电泳技术制备YBCO高温超导厚膜

介绍了电泳技术制备YBCO高温超导厚膜的实验方法和YBCO高温超导厚膜的电学性质测量 ,讨论了在学生小型科研实验或设计实验中开展此实验的学时安排、注意事项和实验内容的扩展 .     

Electrical characterization of low temperature deposited TiO2 films on strained-SiGe layers

Thin films of titanium dioxide have been deposited on strained Si_0.82Ge_0.18 epitaxial layers using titanium tetrakis-isopropoxide [TTIP, Ti(O-i-C₃H₇)₄] and oxygen by microwave plasma enhanced chemical vapor deposition (PECVD). The films have been characterized by X-ray diffraction (XRD) and Fourier transform infrared spectroscopy (FTIR). Dielectric constant, equivalent oxide thickness (EOT), interface state density (D_it), fixed oxide charge density (Q_f/q) and flat-band voltage (V_FB) of as-deposited films were found to be 13.2, 40.6 Å, 6×10¹¹ eV⁻¹ cm⁻², 3.1×10¹¹ cm⁻² and −1.4 V, respectively. The capacitance–voltage (C–V), current–voltage (I–V) characteristics and charge trapping behavior of the films under constant current stressing exhibit an excellent interface quality and high dielectric reliability making the films suitable for microelectronic applications.     

SURFACE METALLIZATION OF CENOSPHERES AND PRECIPITATORS BY ELECTROLESS PLATING

This paper reports the use of a colloidal Pd^0 catalysis system to metallize the surface of precipitators separated from coal fly-ash, and metals such as Cu, Ni etc. are deposited on the precipitators surface. Alternatively, according to the characteristic surface of cenospheres, an Ag coating catalysis system is adopted to first deposit Ag on the cenospheres surface, followed, if necessary, by the deposition of other metals such as Cu, Ni, etc. on the Ag coating to produce monolayer and multilayer metal-coated cenospheres. The surface characteristics and the morphologies of the metal coatings are examined in detail with scanning electron microscopy (SEM), energy dispersive spectroscopy (EDX) and X-ray photoelectron spectroscopy (XPS) techniques. It can be shown that the quality of metal coatings derived from the Aa coatina catalysis system, is better than that of the colloidal Pd^0 catalysis system.     

Development of measuring magnetic Compton profiles by grazing incidence geometry

A novel technique of measuring a magnetic Compton profile using the grazing angle geometry against a sample surface (Grazing Incidence Magnetic Compton Profile) has been successively developed. Measurements of a magnetic moment and a magnetic Compton profile are possible for a Fe 200 nm film on a thick glass substrate. The estimated thinnest limit for measurements is 100 nm for a Fe film.     

PECVDSiON薄膜的工艺控制,性质及其潜在应用

研究了等离子增强化学气相淀积氮氧化硅薄膜的工艺控制、性质以及薄膜波导在超大规模集成电路光互连中的潜在应用。     

Electrical and optical properties of oxygen doped GaN grown by MOCVD using N2O

Oxygen doped GaN has been grown by metalorganic chemical vapor deposition using N₂O as oxygen dopant source. The layers were deposited on 2″ sapphire substrates from trimethylgallium and especially dried ammonia using nitrogen (N₂) as carrier gas. Prior to the growth of the films, an AIN nucleation layer with a thickness of about 300? was grown using trimethylaluminum. The films were deposited at 1085°C at a growth rate of 1.0 μm/h and showed a specular, mirrorlike surface. Not intentionally doped layers have high resistivity (>20 kW/square). The gas phase concentration of the N₂O was varied between 25 and 400 ppm with respect to the total gas volume. The doped layers were n-type with carrier concentrations in the range of 4×10¹⁶ cm⁻³ to 4×10¹⁸ cm⁻³ as measured by Hall effect. The observed carrier concentration increased with increasing N₂O concentration. Low temperature photoluminescence experiments performed on the doped layers revealed besides free A and B exciton emission an exciton bound to a shallow donor. With increasing N₂O concentration in the gas phase, the intensity of the donor bound exciton increased relative to that of the free excitons. These observations indicate that oxygen behaves as a shallow donor in GaN. This interpretation is supported by covalent radius and electronegativity arguments.     

Radio-Frequency Hexamethyldisiloxane Plasma Deposition: A Comparison of Plasma- and Deposit-Chemistry

This study reports on the effect of input power to hexamethyldisiloxane (HMDSO) plasmas. The power dependence of the plasma-phase species and of the surface chemistry (of the deposits) has been investigated. Neutral and positive molecular species were detected within the plasma using mass spectrometry (MS). Secondary ion mass spectrometry (SIMS) was used to probe the molecular structure of the deposits. The elemental composition of the surface was determined by XPS and the deposition rate was monitored using a vibrating quartz crystal microbalance. Neutral and cationic molecules of mass greater than HMDSO were detected in the plasma. Their formation through ion-molecule reactions is proposed. Changes in the relative concentration of plasma-phase species follow those seen in molecular species detected at the deposit surface. Thus, we believe that the molecular structure of the deposits can be related to the species present in the plasma. While traditionally the dominant mechanism in deposit formation is assumed to be free radical combinations, we propose other possibilities involving cations with the aim of putting forward a new perspective on plasma polymerization mechanisms and thereby stimulating discussion.     

Film morphology and reaction rate for the CVD of tungsten by the WF6—SiH4 reaction

Journal of Electronic Materials - Low pressure chemical vapor deposition (LPCVD) of tungsten (W) by SiH4 reduction of WF6 on Si(100) surfaces was studied in a single-wafer, cold-wall reactor over a...     

脉冲激光淀积高电流密度的YBCO超导带材

采用脉冲激光加辅助离子源的方法在长为６．０ｃｍ的ＮｉＣｒ合金基带上制备０．１３μｍ厚的Ｙ－ＺｒＯ２（ＹＳＺ）隔离层，再用脉冲激光在ＹＳＺ／ＮｉＣｒ带上制备１．５μｍ厚的ＹＢａ２Ｃｕ３Ｏ７－ｘ超导厚膜形成ＹＢＣＯ／ＹＳＺ／ＮｉＣｒ超导带材。实验测得在７７Ｋ，０Ｔｅｓｌａ下其临界电流密度为８．７５×１０４Ａ／ｃｍ２，超导转变温度为８８．６Ｋ。