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101.
Following logic in the silicon semiconductor industry, the existence of native oxide and suitable fabrication technology is essential for 2D semiconductors in planar integronics, which are surface-sensitive to typical coating technologies. To date, very few types of integronics are found to possess this feature. Herein, the 2D Bi2O2Te developed recently is reported to possess large-area synthesis and controllable thermal oxidation behavior toward single-crystal native oxides. This shows that surface-adsorbed oxygen atoms are inclined to penetrate across [Bi2O2]n2n+ layers and bond with the underlying [Te]n2n− at elevated temperatures, transforming directly into [TeO4]n2n− with the basic architecture remaining stable. The oxide can be adjusted to form in an accurate layer-by-layer manner with a low-stress sharp interface. The native oxide Bi2TeO6 layer (bandgap of ≈2.9 eV) exhibits visible-light transparency and is compatible with wet-chemical selective etching technology. These advances demonstrate the potential of Bi2O2Te in planar-integrated functional nanoelectronics such as tunnel junction devices, field-effect transistors, and memristors.  相似文献   
102.
Here an IR-heating chemical vapor deposition (CVD) approach enabling fast 2D-growth of WSe2 thin films is reported, and the great potential of metal contact doping in building CVD-grown WSe2-based lateral homojunction is demonstrated by contacting with TiN/Ni metals in favor of holes/electrons injection. Shortening nanosheet channel to ≈2 µm leads to pronounced enhancement in the performance of diode. The fabricated WSe2-based diode exhibits high rectification ratios without the need of gate modulation and can work efficiently as photovoltaic cell, with maximum open circuit voltage reaching up to 620 mV and a high power conversion efficiency over 15%, empowering it as superb self-powered photodetector for visible to near-infrared lights, with photoresponsivity over 0.5 A W−1 and a fast photoresponse speed of 10 µs under 520 nm illumination. It is of practical significance to achieve well-performed photovoltaic devices with CVD-grown WSe2 using fab-friendly metals and simple processing, which will help pave the way toward future mass production of optoelectronic chips.  相似文献   
103.
Single crystal metal halide perovskites thin films are considered to be a promising optical, optoelectronic materials with extraordinary performance due to their low defect densities. However, it is still difficult to achieve large-scale perovskite single-crystal thin films (SCTFs) with tunable bandgap by vapor-phase deposition method. Herein, the synthesis of CsPbCl3(1–x)Br3x SCTFs with centimeter size (1 cm × 1 cm) via vapor-phase deposition is reported. The Br composition of CsPbCl3(1–x)Br3x SCTFs can be gradually tuned from x = 0 to x = 1, leading the corresponding bandgap to change from 2.29 to 2.91 eV. Additionally, an low-threshold (≈23.9 µJ cm−2) amplified spontaneous emission is achieved based on CsPbCl3(1–x)Br3x SCTFs at room temperature, and the wavelength is tuned from 432 to 547 nm by varying the Cl/Br ratio. Importantly, the high-quality CsPbCl3(1–x)Br3x SCTFs are ideal optical gain medium with high gain up to 1369.8 ± 101.2 cm−1. This study not only provides a versatile method to fabricate high quality CsPbCl3(1–x)Br3x SCTFs with different Cl/Br ratio, but also paves the way for further research of color-tunable perovskite lasing.  相似文献   
104.
以六羰基钼和氧气为前驱体,通过等离子增强原子层沉积技术(PE-ALD)在硅基片上实现了α-MoO3薄膜的低温制备。利用X射线衍射仪、扫描电子显微镜、原子力显微镜、X射线光电子能谱仪等手段对薄膜的晶体结构、表面形貌及薄膜成分进行表征和分析。研究发现衬底温度和氧源脉冲时间对MoO3薄膜的晶体结构和表面形貌变化起关键作用。当衬底温度为170℃及以上时所制备的薄膜为α-MoO3;适当延长ALD单循环中的氧源脉冲时间有利于低温沉积沿(0k0)高度择优取向的MoO3薄膜。根据对不同厚度MoO3薄膜表面的原子力显微图片分析,MoO3薄膜为岛状生长模式。  相似文献   
105.
AIN thin films were deposited on c-,a-and r-plane sapphire substrates by the magnetron sputtering technique.The in-fluence of high-temperature thermal annealing (HTTA) on the structural,optical properties as well as surface stoichiometry were comprehensively investigated.The significant narrowing of the (0002) diffraction peak to as low as 68 arcsec of AIN after HTTA implies a reduction of tilt component inside the AIN thin films,and consequently much-reduced dislocation densities.This is also supported by the appearance of E2(high) Raman peak and better Al-N stoichiometry after HTTA.Furthermore,the in-creased absorption edge after HTTA suggests a reduction of point defects acting as the absorption centers.It is concluded that HTTA is a universal post-treatment technique in improving the crystalline quality of sputtered AIN regardless of sapphire orienta-tion.  相似文献   
106.
Carbon Nanotubes Grown on Sepiolite as Catalyst Carrier   总被引:2,自引:0,他引:2  
Multi-walled carbon nanotubes were synthesized by the catalytic decomposition of acetylene at 750℃ over sepiolite powder,which was treated with aqueous cobalt nitrate. It is expected that the composite with high specific area will have high capacity of hydrogen storage.  相似文献   
107.
Synthesis of organometallic materials can be accomplished in many cases by cocondensation of metal atoms and organic molecules at low temperatures. The reaction kinetics is determined by the competition between metal cluster growth and formation of the organometallic compound. Interesting compounds may contain one or more metal atoms; the latter type could be obtained by reaction between a cluster containing the desired number of metal atoms and an organic molecule. A precise knowledge of the events occurring on condensation of metal atoms and cluster formation can therefore be of value in the control of chemical synthesis. These phenomena have been investigated in connection with the study of the growth of thin metallic films, both experimentally and theoretically. Direct observation of the formation of very small clusters is difficult. The good agreement between experimental results and recent calculations for the development of large clusters, however, allows reliable theoretical conclusions for the first stages of adsorption and cluster formation. The present contribution describes experimental work on film growth and relevant theoretical concepts, and an attempt is made to develop applications to organometallic synthesis.  相似文献   
108.
Glass capillaries coated with Chirasil-Val, a chirally functionalised polysiloxane, are capable in principle of resolving all protein amino-acid enantiomers in a single run and within a short analysis time, thus allowing for example the quantitative amino acid determination by enantiomer labelling. The elution characteristics of the individual amino acids however are also dependent upon the chemical nature of the capillary wall surface, and a surface pretreatment is found to be necessary if all protein amino acids are to be analysed. Of the various methods of pretreatment tested, etching of borosilicate glass with gaseous HCl followed by deposition of colloidal silicic acid is considered to be the most suitable.  相似文献   
109.
Tubular halloysite can be used as a template to fabricate a novel metallized ceramic microstructure through electroless plating. Reduction of Pd ions by methanol is conducted to initiate Ni plating. There is a simultaneous deposition of Ni nanoparticles on the outer surface and discontinuous wires in the lumen site of the halloysite template obtained. The different deposition could be caused by the different composition distribution of ferric oxide impurity in the wall due to the isomorphic substitution during the formation of halloysite template. Its magnetic property is mainly attributed to the Ni nanoparticles, not the wires. The metallized ceramic microstructure has the potential to be utilized as a novel magnetic material.  相似文献   
110.
Underpotential deposition studies of copper on glassy carbon   总被引:1,自引:0,他引:1  
Studies on the deposition and dissolution of copper from 0·5 M sulphuric acid solutions onto glassy carbon (GC) using potential sweep techniques indicated that an additional peak occurs at higher positive potentials than the bulk stripping peak. This peak is identified as due to the stripping of underpotential deposited (UPD) copper. Results of investigations on the effect of sweep rate, deposition potential and time of deposition on the peak characteristics of UPD and bulk deposited copper are also reported.  相似文献   
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