光柱显示技术探讨

本文叙述自动化仪表用光柱显示技术的工作原理及器件结构，重点论述直流等离子体光柱，发光二极管光柱，真空荧光及液晶光柱器件的结构和驱动电路，还展望光柱显示的发展趋势。     

Breakage of λ-DNA by inorganic tin and organotin compounds as environmental pollutants

In proportion to the environmental pollution problems caused by organotin compounds, the genotoxicities of tin compounds in the environments have become of interest so as to estimate their safety in recent years. In this work, isolated λ-DNA (double-strand DNA) was incubated with inorganic tin(II) and tin(IV) and five organotin compounds [n-butyltin trichloride, di(n-butyltin) dichloride, methyltin trichloride, dimethyltin dichloride and trimethyltin chloride] in reaction systems both with and without hydrogen peroxide (H₂O₂) content. The tin compounds tested in this study did not induce DNA breakage in the absence of hydrogen peroxide. Divalent inorganic tin (SnCl₂) and tetravalent inorganic tin (SnCl₄) caused DNA breakage in the presence of hydrogen peroxide (10 mM), and the DNA damage activity of inorganic tin was much more potent in divalent inorganic tin (SnCl₂) than in tetravalent inorganic tin (SnCl₄). Divalent inorganic tin (SnCl₂) induced DNA breakage in a concentration-dependent fashion at concentrations greater than 0.1 mM of SnCl₂ in the presence of hydrogen peroxide (10 mM). DNA breakage was not caused by n-butyltin compounds and methyltin compounds either in the presence or in the absence of hydrogen peroxide.     

高Q Ba(Zn_(1/3)Ta_(2/3))O_3介质谐振器材料及其在毫米波系统中的应用

叙述了Ｂａ（Ｚｎ１／３Ｔａ２／３）Ｏ３介质谐振器材料的制备、结构、微波性能及典型应用。Ｂａ（Ｚｎ１／３Ｔａ２／３）Ｏ３介质材料介电常数εｒ为２９．５，频率温度系数τ≈０（－５５～＋８５℃），１０ＧＨｚ下最大无载Ｑ值１４７００，在２８ＧＨｚ测得Ｑ值约为４８００。这种材料具有高Ｑ值，特别适用于Ｘ以上波段作为振荡器电路中频率稳定元件。用这种介质谐振器已研制出８ｍｍ介质稳频微带耿氏振荡器，频率稳定度小于１０×１０－６／℃，最大输出功率达１８０ｍＷ。     

一类三元线性分组码的译码

Ｐｌｅｓｓ［１］证明了三元（１２，６，６）Ｇｏｌａｙ码具有一种双层结构，并据此给出了该码的快速硬判决译码算法。本文推广了Ｇｏｌａｙ码的Ｐｌｅｓｓ结构，给出了由三元（ｎ，ｋ，ｄ）线性分组码构造的三元（３，ｎ＋ｋ，≥ｍｉｎ（ｎ，２ｄ，６））线性分组码，其中包括（１２，６，６）Ｇｏｌａｙ码和（１８，９，６）码，并以三元（１８，９，６）码为例给出了这类码的最大似然软判决译码算法。     

HIST: A hierarchical self test methodology for chips,boards, and systems

This article presents the HIST approach, which allows the automated insertion of self test hardware into hierarchically designed circuits and systems to implement the RUNBIST instruction of the IEEE 1149.1 standard. To achieve an optimal and throughout self testable system, the inherent design hierarchy is fully exploited. All chips and boards are provided with appropriate test controllers at each hierarchy level. The approach is able to detect all those faults, which are in the scope of the underlying self test algorithms. In this paper the hierarchical test architecture, the test controllers as well as all necessary synthesis procedures are presented. Finally a successful application of the HIST approach to a cryptography processor is described.     

Pattern forming precipitation in gels due to coupling of chemical reactions with diffusion

Precipitate-forming chemical reactions have been studied in chemically cross-linked poly(vinyl alcohol) gel medium. One of the reactive components was incorporated into the gel, the other was allowed to diffuse into it. Depending on the experimental conditions the reaction-diffusion process often results in patterns of different type. Experiments performed in tubes and in thin layers were carried out in order to investigate the effects of various factors (cross-linking density, swelling degree as well as the concentrations of the outer and inner electrolytes) on the morphologies of the precipitate patterns. It was found that precipitation occurs not only in the Liesegang bands, but also between bands. Beside Liesegang-type structures, tree-like patterns have been observed, showing a characteristic periodicity in the density profile obtained by digitalized image analyses.     

双（十二烷基亚磺酰）乙烷溶剂萃取钯及其机理的研究

本文研究用双（十二烷基亚磺酰）乙烷萃取钯的性能，在ＫＩ存在下从７ｍｏｌ／Ｌ盐酸介质中用含有ＢＤＳＥ的氯仿能定量萃取钯，有机的钯可被硫脲或氨溶液反萃继之用ＴＭＫ－ＴｒｉｔｏｎＸ－１００光度法测定，研究了萃取的最佳条件及干扰情况，斜率法测得萃合物组成为Ｐｄ：Ｉ：ＢＤＳＥ＝１：２：１，红外光谱证实萃合物中ＢＤＳＥ的二个亚砜以硫原子与钯配位，萃合物为异位体络合物，提出了选择性萃取分离钯的新方法。     

High quality gate dielectrics formed by rapid thermal chemical vapor deposition of silane and nitrous oxide

In the present study, we have performed electrical characterization of oxides deposited via rapid thermal chemical vapor deposition using SiH₄ and N₂O. We have investigated the effect of temperature, pressure, and SiH₄ to N₂O ratio on the electrical and material properties of as-deposited films. We have found that as-deposited oxides deposited at low temperatures, low pressures, and with a low silane to nitrous oxide ratio of ～0.5% give good material and electrical properties. The as-deposited films are stoichiometric in nature and have high deposition rates. As-deposited films had very low D_it values, high breakdown fields, and excellent subthreshold swing. The leakage currents and metal oxide semiconductor field effect transistor current drive, although lower than thermal oxides, were found to be quite acceptable. We have also investigated the thickness dependence of the films and found that as the film thickness is reduced below 50Å, the reliability improves for all oxides including the silicon-rich deposited oxides.     

Low-pressure pyrolysis studies of a new phosphorus precursor: Tertiarybutylbis(dimethylamino)phosphine

The low pressure decomposition of tertiarybutylbis(dimethylamino) phosphine, (t-Bu)P(NMe₂)₂, (TBBDMAP), has been studied on quartz and deposited GaP and InP surfaces. This new phosphorus precursor has been found to pyrolyze on quartz surfaces at much lower temperatures than the related compounds tertiarybutylphosphine, (t-Bu)PH₂, (TBP) and tris(dimethylamino)phosphorus, P(NMe₂)₃, (TDMAP). In contrast to the results obtained for TDMAP, GaP and InP surfaces decrease the decomposition temperature of TBBDMAP only slightly. The TBBDMAP reaction products were dimethylamine, methylmethyleneimine, and isobutylene, consistent with previous pyrolysis studies of TBP and TDMAP.     

Discontinuous Galerkin method with a posterioriL_p(0,t_i) error estimate for second-kind Volterra problems

Summary. We consider a discontinuous Galerkin finite element method applied in time to a model Volterra equation of the second kind. A residual-based computable Galerkin-error estimate is derived for . This estimate does not explicitly contain the time step and therefore the time step control must be based on a heuristic criterion, the estimate can then be used to demonstrate the integrity, or otherwise, of the finite element solution. After performing some numerical experiments we conclude that this approach is at least competetive with classical discretizations since it is computationally simple to implement, but has the added advantage of reliable error feedback. Received June 25, 1995