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61.
In this paper, the chronoamperometry was used to study the charging processes of polyethylenedioxythiophene (PEDOT) modified electrodes in the potential range where PEDOT was in the oxidized state. The results show that the charging behaviors of the PEDOT films are well agreed with the exhausted finite diffusion model. The dependence of the capacitance values of the films on potential and concentration of solution was also studied in this potential range. 相似文献
62.
Using well-cycled, thin composite graphite electrodes we analyze carefully the limitations of potentiostatic and galvanostatic intermittent titration techniques (PITT and GITT, respectively) for determination of the differential (incremental) intercalation capacitance, Cdif, and the chemical diffusion coefficient, D, of Li ions in these ion-insertion electrodes (IIEs). We demonstrate the superiority of the GITT over PITT to determine these quantities as the former technique allows for a more accurate determination of Cdif and hence D which closely approach to the spinodal domain related to the first-order phase transition during ion-insertion. We show that GITT is also more effective in eliminating the parasitic contributions of background currents to the total measured response. A pronounced difference in the initial, intrinsic kinetics of formation of a new phase in the bulk of the old one has been observed depending on the direction of titration (phases less saturated with Li are formed faster during deintercalation than the Li-rich phases in the course of intercalation). 相似文献
63.
As an adjunct to the regression analysis of differential capacitance curves, which allows refining the adsorption parameters, a program, which takes into account possible errors in volume concentrations of organic substances, is developed. Using this procedure, the earlier data on the differential capacitance of a mercury electrode in aqueous solutions of normal butanol (1-BuOH) containing either 0.1 M NaF or 0.05 and 0.5 M Na2SO4 as the supporting electrolyte are analyzed. This allows obtaining the most accurate values of adsorption parameters for the systems mentioned above within the framework of the model of two parallel capacitors and the Frumkin isotherm. It is shown that, when a linear dependence of the intermolecular interaction parameter on the electrode potential is taken into account, the standard deviation of experimental capacitance values from those calculated using the mentioned model is 6.8–8.8%, which points to very high accuracy of this phenomenological model. 相似文献
64.
镓是第一个根据化学元素周期律预言并在自然界中证实的元素,是室温下电导率和热导率均为最大的液态物质,镓在电子工业中得到了广泛应用,被誉为电子工业“脊梁”。近十几年来,镓的更多应用潜力被发掘出来,在电子工业、散热、增材制造、柔性机器、生物医学等领域均有重要的应用前景。 相似文献
65.
C. DurioA. Daidouh N. ChouaibiC. Pico M.L. Veiga 《Journal of solid state chemistry》2002,168(1):208-216
New sodium orthophosphates of general formula Na2M3(PO4)3 belonging to the alluaudite-type structure have been synthesized and characterized by neutron and X-ray powder diffraction. The nature of the M3 elements (M3=GaMn2, GaCd2, InMn2 and FeMnCd) was chosen in order to analyze their influence on electrical and magnetic properties. The conductivity of these materials was measured by the complex impedance method and the transport mechanism was studied from complex permittivities and modulus formalism. Electrical results including charge/discharge experiments showed two main behaviors: GaCd2 and FeMnCd behave as purely ionic conductors whereas GaMn2 and InMn2 are mixed ionic-electronic conductors. The magnetic susceptibility data reveal the antiferromagnetic behavior of FeMnCd, InMn2 and GaMn2, with a weak ferromagnetic transition at low temperatures. 相似文献
66.
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68.
提出了在屏蔽栅沟槽型MOSFET(SGT)的沟槽侧壁氧化层中形成浮动电极的结构,通过改善电场分布,优化了特征导通电阻与特征栅漏电容。在传统SGT结构的基础上,仅通过增大外延层掺杂浓度,改变浮动电极的长度和位置以及氧化层厚度,最终得到击穿电压为141.1 V、特征导通电阻为55 mΩ·mm2、特征栅漏电容为4.72 pF·mm-2的浮动电极结构。与相同结构参数的SGT结构相比,在击穿电压不变的条件下,浮动电极结构的特征导通电阻降低了9.3%,Baliga优值提升了13%,特征栅漏电容降低了28.4%。 相似文献
69.
Zixin Chang Mengsu Zhu Yong Sun Feng He Yang Li Chunhui Ye Yigang Jin Ze Li Wei Xu 《Advanced functional materials》2023,33(32):2301513
Herein, a novel D4 symmetrical redox-active ligand tetrathia[8]circulene-2,3,5,6,8,9,11,12-octaol (8OH-TTC) is designed and synthesized, which coordinates with Ni2+ ions to construct a 2D conductive metal-organic framework (2D c-MOF) named Ni-TTC. Ni-TTC exhibits typical semiconducting properties with electrical conductivity up to ≈1.0 S m−1 at 298 K. Furthermore, magnetism measurements show the paramagnetic property of Ni-TTC with strong antiferromagnetic coupling due to the presence of semiquinone ligand radicals and Ni2+ sites. In virtue of its decent electrical conductivity and good redox activity, the gravimetric capacitance of Ni-TTC is up to 249 F g−1 at a discharge rate of 0.2 A g−1, which demonstrates the potential of tetrathia[8]circulene-based redox-active 2D c-MOFs in energy storage applications. 相似文献
70.
Jianfeng Li Min Liu Kun Yang Yimei Wang Junwei Wang Zhicai Chen Kui Feng Dong Wang Jianqi Zhang Yongchun Li Han Guo Zhixiang Wei Xugang Guo 《Advanced functional materials》2023,33(23):2213911
Designing n-type polymers with high electrical conductivity remains a major challenge for organic thermoelectrics (OTEs). Herein, by devising a novel selenophene-based electron-deficient building block, the pronounced advantages of selenium substitution in simultaneously enabling advanced n-type polymers is demonstrated with high mobility (≈2 orders of magnitude higher versus their sulfur-based analogues due to both intensified intra- and inter-chain interactions) and much improved n-doping efficiency (enabled by the largely lowered LUMO level with a ≈0.2 eV margin) of the resulting polymers. Via side chain optimization and donor engineering, the selenium-substituted polymer, f-BSeI2TEG-FT, achieves a highest conductivity of 103.5 S cm−1 and power factor of 70.1 µW m−1 K−2, which are among the highest values reported in literature for n-type polymers, and f-BSeI2TEG-FT greatly outperformed the sulfur-based analogue polymer by 40% conductivity increase. These results demonstrate that selenium substitution is a very effective strategy for improving n-type performance and provide important structure-property correlations for developing high-performing n-type OTE materials. 相似文献