A secure authentication with key agreement scheme using ECC for satellite communication systems

Recently, Liu et al came up with an authentication with key agreement scheme for securing communication over the low‐earth‐orbit satellite communication systems. However, this paper demonstrates that this scheme cannot provide perfect forward secrecy or defend against the smart card stolen attack, and has some very bad design defects, making it unpractical. Thus, to design a truly secure authentication scheme for satellite communication systems, this paper presents a new scheme, making use of the advantages of elliptic curve cryptography and symmetric cryptography. The security analyses by the widely used BAN logic and heuristic discussions demonstrate that our new scheme possesses perfect security properties and can defend against various well‐known malicious attacks. Moreover, our new scheme allows users to update passwords locally in accordance with their wishes, achieving a good user experience.     

基于无约束非线性优化算法的光强自相关函数拟合

在光子相关光谱(PCS)颗粒测量技术中非线性累积反演方法是一种重要的算法。采用无约束非线性优化算法对反演过程中相关曲线的拟合问题进行了分析和研究, 实现了从任意初始值开始获取最优非线性拟合解, 并给出了算法的实现步骤。采用此方法对50 nm, 100 nm, 200 nm和500 nm的标准聚苯乙烯乳胶颗粒的实测光强自相关函数数据进行了拟合, 并反演了颗粒粒径, 与其他曲线拟合算法相比, 本算法不但对初始值的依赖性小, 而且得到的颗粒粒径更接近乳胶颗粒的标称直径, 测量误差更小。     

500—4250eV电子对CO2的散射全截面绝对测量

对中能电子与二氧化碳分子碰撞的散射全截面测量，给出５００－４２５０ｅＶ电子对ＣＯ２的绝对散射全截面。对测量结果作了曲线拟合，并与已有的实验和理论结果进行了比较     

碲镉汞离子注入温度研究

作为pn结成型的重要参数,离子注入温度对晶格缺陷和材料扩散的影响较大。在碲镉汞的离子注入过程中,注入温度很大程度上影响着注入区的尺寸与光刻掩膜的形貌。从离子注入工艺的温度控制出发,研究了该工艺中的束流、注入能量、接触面粗糙度等因素;结合器件的I-V曲线,探究了注入温度对碲镉汞红外探测器性能的影响。结果表明,较低的注入束流、冷却温度以及良好的导热面,可以保证实际注入温度低于光刻胶的耐受温度,从而提高工艺过程的成品率。同时,较低的注入温度对于减小暗电流及注入区扩散面积起到了一定的作用,提高了碲镉汞红外探测器光敏元的性能。     

微驱动器的压电-弹性耦合分析(英文)

压电弹性耦合结构是实现MEMS微流体驱动的一种重要方式,掌握压电-弹性振动的耦合机理是微流体驱动协调控制的关键。针对压电与硅膜耦合微驱动结构,基于压电效应和弹性薄板理论,采用Rayleigh-Ritz能量法建立了周边固支边界条件下,弹性振动硅膜与压电驱动膜片耦合振动的理论模型,推导并计算了该微驱动结构的耦合振型及谐振频率。基于激光测振仪进行了该压电微驱动结构的振动测试实验,经实验模态分析获得了实测的谐振频率。理论计算结果与实验测试结果的对比分析表明,两者基本相符,验证了理论分析模型的正确性,为MEMS微流体的驱动与控制提供了一定的理论基础和实验依据。     

基于实际结温分布中小电流过趋热效应的验证

对于从红外热像图得到的实际的晶体管结温分布,通过热谱分析方法获得该温度分布对应的热谱曲线,进而建立了晶体管子管并联模型,并在此基础上,经过实验和理论计算证实了pn结中小电流过趋热效应存在的真实性.当结温分布不均匀时,对于通过pn结的电流,小电流比大电流更具有趋热性.即电流越小,高温区与低温区电流密度的比值越大,电流越集中在高温区,且集中区域的面积随着电流的减小而缩小.利用这一特性可以研究器件热电不稳定性,结温分布的不均匀性及不均匀度,峰值结温的估算等,这对于半导体器件可靠性分析具有重要的意义.     

Analysis of the generation mechanism of the S-shaped J—V curves of MoS2/Si-based solar cells

Amorphous-microcrystalline MoS$_{2}$ thin films are fabricated using the sol-gel method to produce MoS$_{2}$/Si-based solar cells. The generation mechanisms of the S-shaped current density-voltage ($J$-$V$) curves of the solar cells are analyzed. To improve the performance of the solar cells and address the problem of the S-shaped $J$-$V$ curve, a MoS$_{2}$ film and a p$^+$ layer are introduced into the front and back interfaces of the solar cell, respectively, which leads to the formation of a p-n junction between the p-Si and the MoS$_{2}$ film as well as ohmic contacts between the MoS$_{2}$ film and the ITO, improving the S-shaped $J$-$V$ curve. As a result of the high doping characteristics and the high work function of the p$^+$ layer, a high-low junction is formed between the p$^+$ and p layers along with ohmic contacts between the p$^+$ layer and the Ag electrode. Consequently, the S-shaped $J$-$V$ curve is eliminated, and a significantly higher current density is achieved at a high voltage. The device exhibits ideal p-n junction rectification characteristics and achieves a high power-conversion efficiency (CE) of 7.55%. The findings of this study may improve the application of MoS$_{2}$ thin films in silicon-based solar cells, which are expected to be widely used in various silicon-based electronic and optical devices.     

Soliton solution and interaction property for a coupled modified Korteweg-de Vries （mKdV） system

Hirota＇s bilinear direct method is applied to constructing soliton solutions to a special coupled modified Korteweg- de Vries （mKdV） system. Some physical properties such as the spatiotemporal evolution, waveform structure, interactive phenomena of solitons are discussed, especially in the two-soliton case. It is found that different interactive behaviours of solitary waves take place under different parameter conditions of overtaking collision in this system. It is verified that the elastic interaction phenomena exist in this （1＋1）-dimensional integrable coupled model.     

彩色负片印片颗粒指数的准确测定

分析了彩色负片印片颗粒指数σper实际测试中不同性能负片的测试特点和影响因素。印片颗粒指数的测试点应根据彩色负片的感光特性确定,为正常扩印时对应正片0．74中灰密度的负片密度点。影响印片颗粒指数值的两个主要因素是彩色相纸的反差修正系数α和彩色负片的覆盖力系数ECP;建立了α和ECP的实验求取方法,并通过对几种负片参量的实际测定,分析和说明了参量变化对印片颗粒指数数值的影响程度和应进行的修正。     

B原子的掺杂对富勒烯C32的电子传输特性与负微分电阻效应的影响

采用基于密度泛涵理论的第一性原理和非平衡格林函数方法研究了硼原子的掺杂对于富勒稀C32分子的电子传输特性与负微分电阻效应的影响．结果显示硼原子的掺杂明显改变了C32分子的电子传输特性和负微分电阻效应．同时研究了掺杂的硼原子的个数多少对C32分子的影响．