Behavior and surface energies of polybenzoxazines formed by polymerization with argon,oxygen, and hydrogen plasmas

Polybenzoxazine (PBZZ) thin films can be fabricated by the plasma‐polymerization technique with, as the energy source, plasmas of argon, oxygen, or hydrogen atoms and ions. When benzoxazine (BZZ) films are polymerized through the use of high‐energy argon atoms, electronegative oxygen atoms, or excited hydrogen atoms, the PBZZ films that form possess different properties and morphologies in their surfaces. High‐energy argon atoms provide a thermodynamic factor to initiate the ring‐opening polymerization of BZZ and result in the polymer surface having a grid‐like structure. The ring‐opening polymerization of the BZZ film that is initiated by cationic species such as oxygen atoms in plasma, is propagated around nodule structures to form the PBZZ. The excited hydrogen atom plasma initiates both polymerization and decomposition reactions simultaneously in the BZZ film and results in the formation of a porous structure on the PBZZ surface. We evaluated the surface energies of the PBZZ films polymerized by the action of these three plasmas by measuring the contact angles of diiodomethane and water droplets. The surface roughness of the films range from 0.5 to 26 nm, depending on the type of carrier gas and the plasma‐polymerization time. By estimating changes in thickness, we found that the PBZZ film synthesized by the oxygen plasma‐polymerization process undergoes the slowest rate of etching in CF₄ plasma. © 2004 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 42: 4063–4074, 2004     

介质靶表面的充电效应对等离子体浸没离子注入过程中鞘层特性的影响

针对等离子体浸没离子注入技术在绝缘体表面制备硅薄膜工艺，采用一维脉冲鞘层模型描述介质靶表面的充电效应对鞘层厚度、注入剂量及靶表面电位等物理量的影响.数值模拟结果表明：随着等离子体密度的增高，表面的充电效应将导致鞘层厚度变薄、表面电位下降以及注入剂量增加，而介质的厚度对鞘层特性的影响则相对较小. 关键词： 等离子体浸没离子注入 脉冲鞘层 绝缘介质 充电效应     

超声速等离子体射流的数值模拟

基于可压缩的全Naiver-Stokes方程，利用PHOENICS程序对由会聚 辐射阳极形状等离子体炬产生的超声速等离子体射流进行了数值模拟.考虑了等离子体的黏性、可压缩性以及变物性对等离子体射流特性影响.研究了超声速等离子体射流的流场结构特性以及不同环境压力对等离子体射流产生激波结构的影响.结果表明，超声速等离子体射流在喷口附近形成的周期性激波结构是其和环境气体相互作用的结果. 关键词： 等离子体炬 超声速等离子体射流 PHOENICS     

多目标优化发射层析算法在等离子体场光谱诊断中的应用

提出一种基于多目标优化原理的发射光谱层析(EST)图像重建新算法MCIRT.通过计算机数值 模拟，考察了该算法对非对称发射系数场分布的重建效果.结果表明，与传统层析算法相比 ，MCIRT算法具有收敛快，重建精度高的优势，适合于非完全数据情况下的等离子体发射系 数场重建，并且实时性更好.作为一个应用实例, 运用谱线相对强度法重建了自由电弧等离 子体的三维温度及粒子数密度分布. 关键词： 等离子体诊断 图像重建     

强流四脉冲电子束源实验研究

 为了进行强流多电子束源研究，对现有2MeV LIA 注入器进行了四脉冲改造，二极管脉冲电压约500kV。实验研究了天鹅绒阴极在四脉冲条件下的发射能力、传导电流负载效应以及阴极等离子体运动对阴极电子发射和束能量的影响。利用空间电荷限制流模型推算出阴极等离子体膨胀速率在1 ~4cm/μs之间。     

喷气Z箍缩内爆等离子体的雪铲模型

 在喷气Z pinch内爆等离子体研究中，雪铲模型是一种常用的、比较简单的物理模型。根据实验中提供的电流波形，负载线质量和初始半径，可以通过雪铲模型来估算内爆到心的时刻。根据一维运动方程和不同构形下的解析解以及部分实验结果相结合，讨论了雪铲模型的适用范围。数值计算的内爆时间和实验（Gamble II, Double EAGLE, BLACKJACK 5）测量值符合得较好。结果表明，雪铲模型在喷气Z pinch实验的负载优化设计研究中是很有参考价值的方法。     

Inductively coupled plasma etching of InGaP, AllnP, and AlGaP in Cl2 and BCl3 chemistries

Dry etching of InGaP, AlInP, and AlGaP in inductively coupled plasmas (ICP) is reported as a function of plasma chemistry (BCl₃ or Cl₂, with additives of Ar, N₂, or H₂), source power, radio frequency chuck power, and pressure. Smooth anisotropic pattern transfer at peak etch rates of 1000–2000Å·min^?1 is obtained at low DC self-biases (?100V dc) and pressures (2 mTorr). The etch mechanism is characterized by a trade-off between supplying sufficient active chloride species to the surface to produce a strong chemical enhancement of the etch rate, and the efficient removal of the chlorinated etch products before a thick selvedge layer is formed. Cl₂ produces smooth surfaces over a wider range of conditions than does BCl₃.     

HL-1M边缘等离子体静电湍流扰动

对HL－1M边缘等离子体静电湍流扰动进行了初步的实验研究。获得了扰动的基本特征量，估计了低杂波引起的径向粒子流的变化。在加低杂波（2．45GHz)前、后，电子密度扰动和极向电场扰动的幅度及其关联性变化不大。虽然低杂波部分抑制了静电湍流，但在数量上不能解释粒子约束改善的实验结果。     

Estimation of dynamic properties of attractors observed in hollow copper electrode atmospheric pressure arc plasma system

Understanding of the basic nature of arc root fluctuation is still one of the unsolved problems in thermal arc plasma physics. It has direct impact on myriads of thermal plasma applications being implemented at present. Recently, chaotic nature of arc root behavior has been reported through the analysis of voltages, acoustic and optical signals which are generated from a hollow copper electrode arc plasma torch. In this paper we present details of computations involved in the estimation process of various dynamic properties and show how they reflect chaotic behavior of arc root in the system.     

Temperature Dependence of InSb Reflectivity in the Far Infrared: Determination of the Electron Effective Mass

We measured the dependence of the reflectivity of InSb crystals upon temperature in the submillimeter region using monochromatic radiation from an optically pumped far infrared (FIR) laser. The measures allowed us to determine the value of the electron effective mass at low temperatures with radiations of different frequencies. Our measurements extend the results obtained recently on pure crystals with magneto-optical methods to the low temperatures region where only old measures were available.