The study of phase,microstructure, and magnetocaloric properties in LaFe11.6*xSi1.4B0.1 alloys

The effect of Fe on the phase and magnetocaloric property of LaFe_11.6*xSi_1.4B_0.1 alloys with x = 1.0–1.4 have been studied. The results show that the excess of Fe will make the α-Fe phases increase, but the easy corrosion LaFeSi phase reduces in LaFe_11.6*xSi_1.4B_0.1 alloys. All LaFe_11.6*xSi_1.4B_0.1 alloys keep the first-order magnetic phase transition. The saturation magnetizations of LaFe_11.6*xSi_1.4B_0.1 alloys with x > 1 are much higher than LaFe_11.6Si_1.4B_0.1 alloy under 2T magnetic field. This results in the maximum isothermal magnetic entropy changes, and the relative cooling power of LaFe_11.6*xSi_1.4B_0.1 alloys is bigger than for LaFe_11.6Si_1.4B_0.1 alloys.     

Influence of surface and bulk layers on the crossover features for interaction parameters of a ferroelectric thin film

The phase diagram of a ferroelectric thin film is studied by using the usual mean-field approximation. The crossover features, from the ferroelectric-dominant phase diagram to the paraelectric-dominant phase diagram, for the physical parameters of the thin film are discussed. Special attention is devoted to the investigation of surface and bulk layers, and how to influence the crossover values of exchange interactions and transverse fields.     

Study on optical characterization of TGB and reentrant smectic-A phases in binary mixture of two liquid crystals

In this work, our investigation is to study the optical and thermal properties of the binary mixture of cholesteric and nematic compounds, namely, cholesteryl nonanoate and p-methoxybenzylidene-p-ethylaniline, which exhibits a very interesting liquid crystalline twisted grain boundary (TGB) phase and reentrant smectic-A phase. The chiral liquid crystalline TGB phases and reentrant smectic-A phases have been observed at different concentrations and at different temperatures. The existence of TGB and reentrant smectic-A phases is confirmed by differential scanning calorimetry and optical microscopic studies. The variation of optical anisotropy has been discussed. The helical pitch of the cholesteric phase has also been discussed.     

相位波带片型时间透镜研究

基于Opti-System软件,对相位波带片型时间透镜进行了深入研究。明确了中心波长对相位波带片型时间透镜焦距色散补偿量的影响机理,建立了中心波长、色散补偿量与输出光脉冲消光比及脉冲宽度间的关系。研究结果表明,相位波带片型时间透镜的焦距色散补偿量,在1 310~1 550 nm波长范围与光信号中心波长呈近似线性关系。通过线性拟合,得出焦距色散补偿量与中心波长的线性关系公式。对于不同波长的输入光波,可通过公式确定最佳焦距色散补偿量,实现最窄脉宽和最优消光比的光脉冲输出。研究结果可为优化相位波带片型时间透镜设计提供理论指导,进而拓宽相位波带片型时间透镜的应用范围。     

Electronic structures and phase transition characters of β-, P61-, P62-and δ-Si3N4 under extreme conditions: a density functional theory study

This paper describes the results of structural, electronic and elastic properties of silicon nitride(in its high-pressure P61 and P62 phases) through the first-principles calculation combined with an ultra-soft pseudopotential. The computed equilibrium lattice constants agree well with the experimental data and the theoretical results. The strongest chemical bond(N–Si bond) shows a covalent nature with a little weaker ionic character. P61-Si3N4 is more stable than P62-Si3N4 due mainly to the fact that the shorter N–Si bond in the P61 phase allows stronger electron hybridizations. We have also predicted the phase stability of Si3N4 using the quasi-harmonic approximation, in which the lattice vibration and phonon effect are both considered. The results show that the β→P61 phase transition is very likely to occur at 42.9 GPa and 300 K. The reason why the β→P61→δ phase transitions had never been observed is also discussed.     

密度泛函理论研究β,P61, P62和δ-Si3N4 Si3N4材料在极端条件下的电子结构和相变规律

本文主要采用密度泛函理论框架下的赝势平面波方法结合超软赝势计算研究氮化硅半导体材料（新发现的结构: P61和P62相）的晶胞结构、电子结构和弹性性质。计算得到的点阵常数与实验值和前人的理论值符合的相当好。该半导体材料中最强的化学键是N-Si键,N-Si键主要以共价键形式出现,同时含有微弱的离子键特征。研究还发现P61相比P62相更稳定,这是由于P61相中的N-Si键的键长较短,因此共价键更强。接着,本文通过准谐近似方法计算研究了氮化硅半导体的相变规律。在计算过程中考虑了晶格振动、声子效应和非谐效应对体系性质的影响。本文研究发现 β→P61 相变很可能在42.9GPa压强和300K温度下被观测到。另外,以前的实验研究没有观测到 β→P61→δ相变的原因在本文中也进行了讨论。     

一种Ka波段低相噪GaAs HBT压控振荡器

本文研究了一种采用GaAs HBT工艺实现的工作在Ka波段的压控振荡器。该振荡器采用共射级组态和对称式电容电感谐振腔结构以降低其相位噪声,采用π型反馈网络补偿180°相移。在片测试结果表明：偏离中心频率1 MHz处相位噪声为-96.47dBc/Hz,调谐范围为28.312到28.695GHz,在-6V电源电压下该振荡器直流功耗为18mA,振荡器芯片面积为0.7mm×0.7mm。     

Crystallization kinetics of Sn40Se60 thin films for phase change memory applications

The crystallization kinetics of Sn₄₀Se₆₀ thin films has been successfully investigated using sheet resistance versus temperature measurements. Thermal evaporation was used to deposit the films on ordinary glass substrates. The crystallization temperature for Sn₄₀Se₆₀ thin film was found to be 156.6 ± 0.3 ℃. In the as-deposited state, the sheet resistance was found to be 195 MΩ, this value declined to 1560 Ω/口 upon annealing. The value of activation energy obtained from the Kissinger plot was 0.62 ± 0.07 eV. From the results obtained, Sn₄₀Se₆₀ is a promising alloy for PCM application because of its high electrical contrast, high crystallization temperature, and relatively high activation energy.     

一种接触质量高和兼容特性好的金属-量子点-金属结构的自对准制备方法

我们报道了一种“金属-量子点-金属”结构的自对准制备方法。该方法主要包括“电子束曝光-薄膜淀积-刻蚀”工艺,具有套刻容限大、开发周期短以及可兼容多种材料等优点,尤其适用于具有类似结构的纳米器件制备。该方法中使用的牺牲层工艺和强化版图,降低了剥离工艺的难度,提升了可制备器件结构的力学强度。最后,作为应用实例,我们用该方法制备了尺寸为 255 nm × 45 nm × 30 nm（ 长 × 宽 × 高)的相变节点。