Differential pulse voltammetric determination of trace Te(IV) at a poly(3,3′-diaminobenzidine) film modified gold electrode in flow systems

Electropolymerization of 3,3′-diaminobenzidine on a gold surface gave an adherent, stable film of poly(3,3′-diaminobenzidine) (PDAB). This polymer film retained the complexational functionalities of its monomer, demonstrating preconcentration abilities for several ions, including Se(IV) and Te(IV). In particular, in this work, continuous flow and flow injection methods were developed for the sensitive and selective determination of Te(IV). The optimized method for the continuous flow mode had a detection limit of 5.6×10⁻⁹ mol l⁻¹ for 10 min preconcentration. Typical relative standard deviations for six consecutive determinations were 1.82 and 2.56% for Te(IV) concentrations of 1.0×10⁻⁶ and 5.0×10⁻⁸ mol l⁻¹, respectively (10 min preconcentration). The method was applied to the determination of Te(IV) in real samples.     

碳纤维汞膜微电极1.5次微分伏安法测定米托蒽醌的研究

米托蒽醌（ＭＸＴ）能吸附在碳纤维汞膜微电极表面，阴极溶出时，产生一个灵敏的１．５次微分溶出峰，其峰电流和米托葱酿的浓度在１．０×１０－５ｍｏｌ／Ｌ～１．３×１０－９ｍｏｌ／Ｌ范围内具有良好的线性关系，经３ｍｉｎ的富集，检出限可达１．０×１０－１０ｍｏｌ／Ｌ，据此建立了测定ＭＸＴ的灵敏的新方法，本文讨论了实验条件，并对血样中的ＭＸＴ进行了测定。     

Effect of surfactants on the stability of thin liquid film flow on a rotating disk

The effect of surfactants on surface instabilities of thin liquid film flow on a rotating disk was studied at different flow rates Q (0.5相似文献   

SYNTHESIS AND PROPERTIES OF SULFONATED POLY（ARYLENE ETHER） CONTAINING TRIPHENYL METHANE MOIETIES FROM ISOCYNATE MASKED BISPHENOL

A novel sulfonated poly（arylene ether） containing triphenylmethane moieties was synthesized by the sulfonation of a designed parent polymer using chlorosulfonic acid as sulfonation agent. The sulfonation took place at the para position of the pendant phenyl rings because of the specially designed parent polymer. The position and degree of sulfonation were characterized by ^1H-NMR and elemental analysis. The sulfonated polymers are highly soluble in common organic solvents, such as dimethylsulfoxide, N,N＇-dimethylacetamide, dimethylformamide, ethylene glycol monomethyl ether, and can be readily cast into tough and smooth films from solutions. The films showed good thermal and hydrolysis stabilities. Moreover, Fenton＇s reagent test revealed that the films exhibited superior stability to oxidation. The proton conductivities of the films were comparable with Nation 117 under same conditions. The membrane electrode assembly （MEA） prepared with the asmade film （706 EW, 100 μm dry thickness） shows better cell performance than Nation 115-MEA in the whole current density range.     

Improved method for the determination of sulfur components in natural gas

Determination of trace concentrations of sulfur components in natural gas is a true analytical challenge. Only analytical procedures based on gas chromatography can meet the sensitivity and accuracy requirements dictated by environmental regulation institutions and modern chemical industry. In the present contribution the sample pretreatment and chromatographic separation steps have been evaluated and optimized based on the use of a flamebased sulfur chemiluminescence detector (SCD) for target compound detection. The proposed instrument consists of a programmed temperature vaporizing (PTV) injector employing a liner packed with Chromosorb 104, a 4 μm thick film apolar column and a flame-based SCD. Using a 13 mL sample loop the detection limit achievable with the new method is 3 μg S/m³. The precision of replicate measure. ments is generally in the range of 5–15% relative standard deviation. Lower detection limits can be achieved by preconcentrating larger sample volumes, e.g. 100 mL.     

掺硼多晶金刚石膜的电化学性能研究

采用EACVD(Electron Assisted Chemical Vapor Deposition)方法制备了掺硼金刚石膜, 并用扫描电镜、拉曼光谱及霍尔效应等测试方法对其表面形貌、生长特性、载流子浓度以及导电性能进行了分析. 测试结果表明, 掺硼金刚石膜是由微米级晶粒组成的多晶膜, 其载流子浓度为4.88×1020 cm-3, 电阻率为0.03 Ω·cm, 是高品质金刚石膜. 用该金刚石膜制作电化学电极, 利用循环伏安法分别测量了金刚石膜电极在氯化钾空白底液、亚铁氰化钾溶液和左旋半胱氨酸溶液中的循环伏安曲线, 发现该金刚石膜电极在水溶液中具有宽的电化学窗口(约为3.7 V)和接近零的背景电流, 在生物制剂的检测中具有很高的灵敏度和良好的稳定性, 是一种理想的电化学电极材料.     

Preparation and Optical Properties of Gold-Dispersed BaTiO3, PGO (Pb5Ge3O11) and PLT (Pb1-1.5xLaxTiO3) Thin Films by Sol-Gel Process

Gold-dispersed BaTiO₃, PGO and PLT thin films, which will be used for third-order nonlinear optical devices, were prepared by sol-gel process with spin-coating using HAuCl₄4H₂O, Ba(CH₃COO)₂, Ti[O(CH₂)₃CH₃]₄, Pb(CH₃COO)₂3H₂O, Ge[O-n-C₄H₉]₄, La(CH₃COO)₃1.5 H₂O as starting materials. The thin films were heat-treated in air at temperatures ranging from 400 to 800 for 1 h. The nonlinear optical property of these thin films was measured by the degenerate four-wave mixing (DFWM) method using a frequency-doubled Nd: YAG laser with 20 ps pulse duration. Third-order nonlinear susceptibility χ⁽³⁾ of gold-dispersed BaTiO₃, PGO and PLT thin films with 5 vol% of gold were 1.410⁻⁶ esu, 3.510⁻⁷ esu respectively. The large χ⁽³⁾ may be ascribed to the high dielectric constant of the films.     

Nonlinear Current-Voltage Curves for Thin-Film Gas-Sensitive Structures

Current-voltage curves for sensor structures based on thin tin oxide films are examined in various gases. Conditions favoring symmetrical nonlinear curves in the voltage range −30 to 30 V are found.__________Translated from Elektrokhimiya, Vol. 41, No. 6, 2005, pp. 735–737.Original Russian Text Copyright © 2005 by Simakov.Published on the basis of a report delivered at the VII Meeting on Fundamental Problems in Solid-State Ionics (Chernogolovka-2004).     

Characteristics of Ag/Bi<Subscript>3.25</Subscript>La<Subscript>0.75</Subscript>Ti<Subscript>3</Subscript>O<Subscript>12</Subscript>/p-Si heterostructure prepared by sol-gel processing

The metal-ferroelectric-semiconductor (MFS) heterostructure has been fabricated using Bi_3.25La_0.75Ti₃O₁₂ (BLT) as a ferroelectric layer by sol-gel processing. The effect of annealing temperature on phase formation and electrical characteristics of Ag/BLT/p-Si heterostructure were investigated. The BLT thin films annealed at from 500°C to 650°C are polycrystalline, with no pyrochlore or other second phases. The C-V curves of Ag/BLT/p-Si heterostructure annealed at 600°C show a clockwise C-V ferroelectric hysteresis loops and obtain good electrical properties with low current density of below 2×10⁻⁸ A/cm² within ±4 V, a memory window of over 0.7 V for a thickness of 400 nm BLT films. The memory window enlarges and the current density reduces with the increase of annealing temperature, but a annealing temperature over 600°C is disadvantageous for good electrical properties.     

Optical oxygen sensor based on fluorescence change of pyrene-1-butyric acid chemisorption film on an anodic oxidation aluminium plate

An optical oxygen-sensing material based on the fluorescence intensity changes of pyrene-1-butyric acid (PBA) chemisorption film has been developed and characterised. The fluorescence intensity of PBA film decreased with increase of oxygen concentration. The I₀/I₁₀₀ value of PBA film is estimated to be 6.14±0.15 and large Stern-Volmer constant (K_SV=0.028±0.13 Torr⁻¹) is obtained. After irradiation for 24 h with 150 W tungsten lamp, little changes of oxygen-sensing properties were observed. These results indicate that PBA film is highly oxygen-sensitive and photostability device. The response times of the PBA chemisorption film were 10.0 s for switching from argon to oxygen, and 53.0 s for switching from oxygen to argon. Moreover, the optical sensor based on the PBA chemisorption film was applied to the measurement of oxygen concentration in aqueous solution.