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41.
Katya Arishtirova Barbara Pawelec Rodimir N. Nikolov J. L. G. Fierro Sonia Damyanova 《Reaction Kinetics and Catalysis Letters》2007,91(2):241-248
The effect of Pt/Ni ratio on the surface properties and catalytic behavior of bimetallic PtNi catalysts for reforming of methane
with CO2 was studied. The TPR, FTIR of adsorbed CO and XPS data showed that introduction of a small amount of Pt (0.3 – 0.5 wt.%)
into the Ni catalyst leads to a decrease of the NiO size, its easy reduction and a uniform distribution of the nickel metal
particles. 相似文献
42.
43.
S. J. Pearton W. S. Hobson M. Geva U. K. Charkrabarti E. Lane A. P. Perley 《Plasma Chemistry and Plasma Processing》1991,11(2):295-310
The reactive ion etching of GaAs, InP, InGaAs, and InAlAs in CF3Br/Ar discharges was investigated as a function of both plasma power density (0.56-1.3 W - cm–2) and total pressure (10-40 mTorr) The etch rate of GaAs in 19CF3Br:1Ar discharges at 10 m Torr increases linearly with power density, from 600 Å min–1 at 0.56 W · cm–2, to 1550 Å · min at 1.3 W · cm–2. The in-based materials show linear increases in etch rates only for power densities above – 1.0 W · cm–2. These etch rates are comparable to those obtained with CCI2F2:O2 mixtures under the same conditions. Smooth surface morphologies and vertical sidewalls are obtained over a wide range of plasma parameters. Reductions in the near-surface carrier concentration in n-type GaAs are evident for etching with power densities of >0.8 W cm–2, due to the introduction of deep level trapping centers. At 1.3 W· cm–2, the Schottky barrier height of TiPtAu contacts on GaAs is reduced from 0.74 to 0.53 eV as a result of this damage, and the photoluminescent intensity from the material is degraded. Alter RIE, we detect the presence of both F and Br on the surface of all of the semiconductors. This contamination is worse than with CCl2F2-based mixtures. High-power etching with CF3Br/Ar together with Al-containing electrodes can lead to the presence of a substantial layer of aluminum oxide on the samples if the moisture content in the reactor is appreciable. 相似文献
44.
A. M. Wrobel B. Lamontagne M. R. Wertheimer 《Plasma Chemistry and Plasma Processing》1988,8(3):315-329
We have investigated O2/CF4 plasma etching of five commercial polymers: polyimide, polyamide, polyethylene terephthalate, polycarbonate and cured epoxy resin. A new large-area microwave plasma apparatus has been used in this work, but the same apparatus can also be used as a capacitively coupled radiofrequency (13.56 MHz) discharge reactor. The effect of operating parameters such as pressure, etchant gas composition, excitation frequency and sample temperature upon etch kinetics has been examined. We have observed distinct maxima in the etch rate as functions of pressure and CF4 concentration. Activation, energies evaluated from the Arrhenius plots fall in the range 0.04-0.2 eV, in agreement with data in the literature. Dry etch susceptibility of a given polymer correlates strongly with the degree of unsaturation in the polymer's structure 相似文献
45.
Baeva M. Luo X. Schäfer J. H. Uhlenbusch J. Zhang Z. 《Plasma Chemistry and Plasma Processing》1998,18(4):429-446
The present work deals with a pulsed microwave discharge in an Ar/CF
4
gas mixture under a low pressure (1–10 mbar). The discharge chamber developed has a cylindrical geometry with a coupling window alternatively made of quartz or alumina. The setup allows one to investigate the plasma–wall interactions (here etching of the quartz window) and the ignition process of the pulsed microwave plasma. Microwave pulses with a duration of 50–200 s and repetition rate between 1 and 10 kHz are typical for the experiments. The space-time behavior of the fluorine number density in the discharge has been investigated experimentally by optical actinometry. The discharge kinetics is modeled using electron-transport parameters and rate coefficients derived from solutions of the Boltzmann equation. Together with the solution of the continuity and electron balance equations and the rate equations describing the production of CF
x
(x=2, 3, 4) radicals and F atoms, a good agreement between experimental and theoretical data can be achieved. 相似文献
46.
Positive and negative ions of Ar/SF6 and Ar/SF6/O2 plasmas (etching plasmas) and of Ar/O2 plasmas (cleaning plasmas) in Pyrex tubes have been investigated using a mass spectrometer-wall probe diagnostic technique. The measurement of negative ions proved to be a very sensitive method for the detection of wall material. In etching plasmas with small admixtures of SF6, oxygen was found as the only representative of wall material. At larger amounts of SF6, silicon could be detected. In cleaning plasmas with small admixtures of O2 applied to a previously etched Pyrex surface, fluorine was found, indicating the reversal of fluoridation by oxygenation. 相似文献
47.
《Microelectronics Reliability》2014,54(9-10):1953-1958
The effects of silicon etching using the Bosch process and LPCVD oxide deposition on the performance of open TSVs are analyzed through simulation. Using an in-house process simulator, a structure is generated which contains scalloped sidewalls as a result of the Bosch etch process. During the LPCVD deposition step, oxide is expected to be thinner at the trench bottom when compared to the top; however, additional localized thinning is observed around each scallop. The scalloped structure is compared to a structure where the etching step is not performed, but rather a flat trench profile is assumed. Both structures are imported into a finite element tool in order to analyze the effects of processing on device performance. The scalloped structure is shown to have an increased resistance and capacitance when compared to the flat TSV. Additionally, the scalloped TSV does not perform as well at high frequencies, where the signal loss is shown to increase. However, the scallops allow the TSV to respond better to an applied stress. This is due to the scallops’ enhanced range of motion and displacement, meaning they can compensate for the stress along the entire sidewall and not only on the TSV top, as in the flat structure. 相似文献
48.
49.
We suggest an electrochemical etching method with viscous etchant to enhance the sharpness of tip of scanning probe microscope. The viscosity of the etchant mixed with HCl solution and glycerol was used as a control parameter in addition to the voltage applied to the tip. In order to improve the sharpness of the tip, a nano-scale meniscus formed between the end of the tip and the liquid level was used. The shapes, aspect ratios, and radii of tips were measured depending on the concentration of the etchant. It was found that the tip etched with the mixed liquid with glycerol was sharper than the tip with the pure HCl solution. This can be explained by the fact that the meniscus formed by viscous liquid is maintained with a thinner diameter and causes final etching until the meniscus bridge is ruptured. 相似文献
50.
Hemant P. Narkhede Uttam B. More Dipak S. Dalal Nilesh S. Pawar Dhananjay H. More 《合成通讯》2013,43(4):573-577
Microwave‐assisted, solvent‐free alkylation and acylation of 2‐mercaptobenzothiazole has been attempted using silica gel, alumina, and a new solid support, fly ash. Fly ash, a waste generated at thermal power stations, could be used as solid support just as efficiently as commercial supports. The additional features of methodology include a much faster reaction, easy workup, higher yields, higher purity of the products, and an ecofriendly approach. 相似文献