二元光学元件——微透镜

介绍了二元光学的产生和发展,着重阐述了二元光学元件之一的微透镜的设计、制作和测试方法以及它们的主要应用。     

Smooth and Vertical Facet Formation for AlGaN-Based Deep-UV Laser Diodes

Using a two-step method of plasma and wet chemical etching, we demonstrate smooth, vertical facets for use in Al _x Ga_1−x N-based deep-ultraviolet laser-diode heterostructures where x = 0 to 0.5. Optimization of plasma-etching conditions included increasing both temperature and radiofrequency (RF) power to achieve a facet angle of 5 deg from vertical. Subsequent etching in AZ400K developer was investigated to reduce the facet surface roughness and improve facet verticality. The resulting combined processes produced improved facet sidewalls with an average angle of 0.7 deg from vertical and less than 2-nm root-mean-square (RMS) roughness, yielding an estimated reflectivity greater than 95% of that of a perfectly smooth and vertical facet.     

光学元件表面疵病标准板系统设计

为解决大口径光学元件表面疵病检测设备的精确测量、校准和溯源问题。设计了用于标定表面疵病检测系统的标准板,通过电子束曝光将定标图案转移至掩模板,再采用反应离子束刻蚀的方法制作标准板。通过扫描电镜测量标准板上各标准线的真实线宽尺寸,并以扫描电镜测量结果为参考值标定大口径表面疵病检测系统。利用所设计的标准板标定基于散射成像法的大口径表面疵病检测系统。结果表明,当疵病线宽尺寸大于45 μm时,疵病的散射像满足几何成像原理,当疵病宽度尺寸小于45 μm时,需按标定结果进行计算。     

铝电解电容器阴极箔的后处理和稳定化处理

研究硝酸后处理对阴极箔比容的影响和稳定化处理形成氧化膜的机理。硝酸浓度和温度低 ,侵蚀箔稳定化处理后氧化膜不稳定 ,容量衰减快。浓度和温度高 ,侵蚀箔容量损失大 ,侵蚀箔的初始比容低。加入硫脲和六偏磷酸钠可提高铝箔的初始比容。磷酸和钼酸钠迭加处理使侵蚀箔获得高的初始比容和低的容量衰减率 ,磷酸处理形成氧化膜可分为 Al PO4结构的表面层及 Al PO4和部分 Al被 P代替的水合氧化铝的过渡层。钼酸钠处理形成的氧化膜可分为 Al2 (Mo O4) 3结构的表面层及 A12 (Mo O4) 3和部分 Al被 Mo代替的水合氧化铝过渡层     

Inductively coupled plasma etching for large format HgCdTe focal plane array fabrication

Inductively coupled plasma (ICP) using hydrogen-based gas chemistry has been developed to meet requirements for deep HgCdTe mesa etching and shallow CdTe passivation etching in large format HgCdTe infrared focal plane array (FPA) fabrication. Large format 2048×2048, 20-μm unit-cell short wavelength infrared (SWIR) and 2560×512, 25-μm unit-cell midwavelength infrared (MWIR) double-layer heterojunction (DLHJ) p-on-n HgCdTe FPAs fabricated using ICP processing exhibit >99% pixel operability. The HgCdTe FPAs are grown by molecular beam epitaxy (MBE) on Si substrates with suitable buffer layers. Midwavelength infrared detectors fabricated from 4-in. MBE-grown HgCdTe/Si substrates using ICP for mesa delineation and CdTe passivation etching demonstrate measured spectral characteristics, RoA product, and quantum efficiency comparable to detectors fabricated using wet chemical processes. Mechanical samples prepared to examine physical characteristics of ICP reveal plasma with high energy and low ion angle distribution, which is necessary for fine definition, high-aspect ratio mesa etching with accurate replication of photolithographic mask dimensions.     

Luminescent Properties of Nanometer Si with Embedded Structure

Blue luminescence at about 431nm is obtained from epitaxial silicon after C^ implantation,annealing in hydrogen ambience and chemical etching sequentially. When annealed in nitrogen ambience and etched accordingly, there is a much narrower peak at about 430nm. During C^ implantation,C=O compounds are introduced into and embedded in the surface of nanometer Si formed during annealing,at last, nanometer silicon with embedded structure is formed,which contributes to the blue emission.     

A primitive-variable Riemann method for solution of the shallow water equations with wetting and drying

A Riemann flux that uses primitive variables rather than conserved variables is developed for the shallow water equations with nonuniform bathymetry. This primitive-variable flux is both conservative and well behaved at zero depth. The unstructured finite-volume discretization used is suitable for highly nonuniform grids that provide resolution of complex geometries and localized flow structures. A source-term discretization is derived for nonuniform bottom that balances the discrete flux integral both for still water and in dry regions. This primitive-variable formulation is uniformly valid in wet and dry regions with embedded wetting and drying fronts. A fully nonlinear implicit scheme and both nonlinear and time-linearized explicit schemes are developed for the time integration. The implicit scheme is solved by a parallel Newton-iterative algorithm with numerically computed flux Jacobians. A concise treatment of characteristic-variable boundary conditions with source terms is also given. Computed results obtained for the one-dimensional dam break on wet and dry beds and for normal-mode oscillations in a circular parabolic basin are in very close agreement with the analytical solutions. Other results for a forced breaking wave with friction interacting with a sloped bottom demonstrate a complex wave motion with wetting, drying and multiple interacting wave fronts. Finally, a highly nonuniform, coastline-conforming unstructured grid is used to demonstrate an unsteady simulation that models an artificial coastal flooding due to a forced wave entering the Gulf of Mexico.     

High power-added-efficiency AlGaN/GaN HEMTs fabricated by atomic level controlled etching

An atomic-level controlled etching(ACE)technology is invstigated for the fabrication of recessed gate AlGaN/GaN high-electron-mobility transistors(HEMTs)with high power added efficiency.We compare the recessed gate HEMTs with conventional etching(CE)based chlorine,Cl₂-only ACE and BCl³/Cl₂ACE,respectively.The mixed radicals of BCl₃/Cl₂were used as the active reactants in the step of chemical modification.For ensuring precise and controllable etching depth and low etching damage,the kinetic energy of argon ions was accurately controlled.These argon ions were used precisely to remove the chemical modified surface atomic layer.Compared to the HEMTs with CE,the characteristics of devices fabricated by ACE are significantly improved,which benefits from significant reduction of etching damage.For BCl₃/Cl₂ACE recessed HEMTs,the load pull test at 17 GHz shows a high power added efficiency(PAE)of 59.8%with an output power density of 1.6 W/mm at Vd=10 V,and a peak PAE of 44.8%with an output power density of 3.2 W/mm at Vd=20 V in a continuous-wave mode.     

外加电压对激光电化学刻蚀硅的影响研究

激光电化学刻蚀是将激光加工技术和电化学加工技术有机结合起来而形成的一种复合型刻蚀工艺。为了研究外加电压对激光电化学刻蚀硅的影响,本文采用248nm KrF准分子激光作为光源聚焦照射浸在KOH溶液中的阳极半导体n—Si上,实现激光诱导电化学刻蚀。在实验的基础上,详细分析外加电压对刻蚀工艺的影响,并对其产生的原因进行了分析。试验结果表明其影响主要有两个方面：（1）正的外加电压保证了SiO2钝化膜生成,从而实现了选择性刻蚀;（2）外加电压的增大,刻蚀速率会相应减小。因而外加电压也是调节刻蚀速率的一个重要的手段。