加快IC/IP研发,推动系统芯片发展

运用翔实的事实和数据,分析研究集成电路技术和产业发展规律.提出发展我国集成电路(包括IP)产业的竞争力是推动自主可控系统芯片发展的较好途径.     

基于共模扼流圈的高速CCD驱动电路

为了降低CCD驱动电路的功耗,设计了基于共模扼流圈的CCD驱动电路。采用CCD驱动器产生低电压的驱动信号,然后利用共模扼流圈进行电压幅度的放大。由于CCD驱动器的电压幅度降低了,使得CCD驱动器的自身功耗大幅度下降。由于共模扼流圈的差模电感很小,有效地避免了和CCD的容性负载产生谐振,因此可以保证驱动信号的质量。对设计的电路进行了电路板制作和测试。实验结果表明,该电路在保证驱动信号质量的前提下,可以有效地降低驱动电路的功耗。     

Emerging interconnects: a state-of-the-art review and emerging solutions

Aluminium was a primary material for interconnection in integrated circuits (ICs) since their inception. Later, copper was introduced as interconnect material which has better metallic conductivity and resistance to electromigration. As the aggressive technology scaling continues, the copper resistivity increased because of size effects, which causes increase in delay, power dissipation and electromigration. The need to reduce the resistor-capacitor??????? delay, dynamic power utilisation and the crosstalk commotion is as of now the fundamental main impetus behind the presentation of new materials. The purpose of this paper is to do a survey of interconnect material used in IC from introduction of ICs to till date. This paper studies and reviews new materials available for interconnect application which are optical interconnects, carbon nanotube (CNT), graphene nanoribbons (GNRs) and silicon nanowires which are alternatives to copper. While doing a survey of interconnect material, it is found that multiwalled CNTs, multilayer GNR and mixed CNT bundles are promising candidates and are ultimate choice that can strongly address the problems faced by copper but on integration basis copper would last for coming years.     

A rugged 650 V SOI-based high-voltage half-bridge IGBT gate driver IC for motor drive applications

This paper proposes a rugged high-voltage N-channel insulated gate bipolar transistor (IGBT) gate driver integrated circuit. The device integrates a high-side and a low-side output stages on a single chip, which is designed specifically for motor drive applications. High-voltage level shift technology enables the high-side stage of this device to operate up to 650 V. The logic inputs are complementary metal oxide semiconductor (CMOS)/transistor transistor logic compatible down to 3.3 V. Undervoltage protection functionality with hysteresis characteristic has also been integrated to enhance the device reliability. The device is fabricated in a 1.0 μm, 650 V high-voltage bipolar CMOS double-diffused metal oxide semiconductor (BCD) on silicon-on-insulator (SOI) process. Deep trench dielectric isolation technology is employed to provide complete electrical isolation with advantages such as reduced parasitic effects, excellent noise immunity and low leakage current. Experimental results show that the isolation voltage of this device can be up to approximately 779 V at 25°C, and the leakage current is only 5 nA at 650 V, which is 15% higher and 67% lower than the conventional ones. In addition, it delivers an excellent thermal stability and needs very low quiescent current and offers a high gate driver capability which is needed to adequately drive IGBTs that have large input capacitances.     

数字光刻系统的IC版图数据接口算法的研究

针对基于数字微镜阵列(DMD)的数字无掩模光刻系统,提出了一种新型IC版图数据接口转化算法,建立了版图数据到曝光数据的转化接口.该接口根据数字光刻系统的需求,以IC版图中工艺层为单位,在保证曝光精度的前提下,可以自动将高精度的IC版图数据转化为与DMD同像素结构的灰度数据.接口兼容GDSⅡ和CIF两种工业标准的IC版图数据,接口算法可以处理这两种IC版图数据中出现的所有基本图素.同时,利用矢量几何计算的方法,成功地解决了自交、重叠等特殊图素或以特殊方式组合图形的转换问题.实验证明,本接口算法具有低复杂度、高精度、高效率的特点,可以作为数字无掩模光刻系统有效的IC版图数据处理通道,对大规模集成电路的制作具有现实意义.     

我国移动芯片技术及产业发展若干问题研究

近几年来,移动互联网的发展突飞猛进,带动智能终端成为集成电路产业的新市场,开放式、水平化分工的发展模式为我国移动芯片的发展提供良好契机,也成为带动集成电路产业突破的又一切入点。立足于此大发展的背景,在梳理、对比、分析移动芯片产业发展现状、趋势及特色的同时,重点探讨我国移动芯片技术及产业发展的若干问题,并对我国未来发展提出相关建议。     

PDP显示驱动技术分支的中国专利申请分析

等离子显示器(PDP)显示驱动技术是等离子显示器发展的重点技术,根据解决的技术问题可分为亮度调节、能量恢复、动态伪轮廓控制等分支.本文对以上几个技术分支的中国专利申请状况进行检索和分析,以期能够根据各个技术分支的发展状况为我国的相关行业和用户提供一些参考.     

封闭式喷雾冷却系统启动时间

 以蒸馏水为冷却工质,对冷凝器内置的封闭式光滑表面喷雾冷却系统进行了启动时间变化规律的实验研究,结果表明喷雾系统不同模块最优启动顺序为冷凝器、泵和加热器。采取6种不同的启动顺序,启动后加热表面的温度不均匀度均小于0.25 ℃。在最优启动顺序下,研究了冷却水流量、泵高度、加热功率和喷雾流量对启动时间的影响。随冷却水流量和喷雾流量增加启动时间缩短,随泵高度增加启动时间略微增大,随加热功率增大启动时间先增大后减小。启动时间影响程度由大到小的因素依次为喷雾流量、冷却水流量、加热功率及泵相对于加热表面的高度。喷雾工质流量由10 mL/min增大到35 mL/min时,封闭式喷雾系统的启动时间缩短了5 000 s。同样操作条件下,封闭式系统的启动时间比开放式系统延长15%~20%。     

源气体流量比对氟化类金刚石薄膜蛋白吸附能力的影响

用316L不锈钢(SU316L)作基片,以高纯石墨作靶、CHF₃和Ar作源气体,采用反应磁控溅射法在不同流量比R (CHF₃／Ar)下制备了氟化类金刚石(F-DLC)薄膜. 利用双蒸水液滴法、BCA(二喹啉甲酸)法和傅里叶红外光谱(FTIR)探讨了影响薄膜蛋白吸附能力的因素. 结果表明,镀有F-DLC薄膜的SU316L表面的血小板黏附量明显减少,血小板的变形程度显著减轻,相应的白蛋白与纤维蛋白原的吸附比普遍高于未镀膜的SU316L表面的相应值,说明镀上F-DLC薄膜可以改善样品的血液相容性. 流量比为2 ∶1左右时制备出的F-DLC薄膜,其白蛋白与纤维蛋白原的吸附比值达到最大,相应的血液相容性最佳. 对薄膜的接触角和表面能以及FTIR光谱分析研究表明,SU316L表面的F-DLC薄膜的白蛋白与纤维蛋白原的吸附比及血液相容性与薄膜的中的-CF_x键的含量(F/C比)和表面能(疏水性)直接相关,控制源气体流量比可以实现对薄膜的血液相容性的调制. 关键词： 反应磁控溅射 氟化类金刚石薄膜 蛋白吸附     

氧瓶燃烧-离子色谱法测定植株中硫和氯

采用氧瓶燃烧法对样品进行燃烧,然后用0.08mol.L-1碳酸钠-0.01mol.L-1碳酸氢钠-过氧化氢吸收液吸收释放出的氯化氢和三氧化硫,并提出了离子色谱法分离测定植株中硫和氯含量的方法。以Ionpac AS14A(4mm×250mm)离子交换柱,以0.008mol.L-1碳酸钠-0.001mol.L-1碳酸氢钠溶液为淋洗液等度洗脱。硫和氯的方法检出限(3S/N)分别为0.04mg.L-1和0.02mg.L-1。方法用于大米(GSB-1S)、黄豆(GSB-4S)、菠菜(GSB-6S)和圆白菜(GSB-5S)标准样品的分析,测定值与认定值相一致,硫和氯的相对标准偏差(n=5)分别为3.1%和4.2%,回收率分别为97.0%和93.8%。