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71.
基于应变Si/SiGe器件结构,本文建立了统一的应变Si NMOSFET漏电流解析模型. 该模型采用平滑函数,实现了应变Si NMOSFET漏电流及其导数,从亚阈值区到强反型区以及从线性区到饱和区的平滑性,解决了模型的连续性问题. 同时考虑了载流子速度饱和效应和沟道长度调制效应的影响,进一步提高了模型精度. 通过将模型的仿真结果和实验结果对比分析,验证了所建模型的有效性. 该模型可为应变Si数字集成电路和模拟集成电路分析、设计提供重要参考.
关键词:
应变Si NMOSFET
漏电流
解析模型 相似文献
72.
为抑制短沟道效应和热载流子效应, 提出了一种非对称HALO掺杂栅交叠轻掺杂漏围栅MOSFET新结构. 通过在圆柱坐标系中精确求解三段连续的泊松方程, 推导出新结构的沟道静电势、阈值电压以及亚阈值电流的解析模型. 结果表明, 新结构可有效抑制短沟道效应和热载流子效应, 并具有较小的关态电流. 此外, 分析还表明栅交叠区的掺杂浓度对器件的亚阈值电流几乎没有影响, 而栅电极功函数对亚阈值电流的影响较大. 解析模型结果和三维数值仿真工具ISE所得结果高度符合. 相似文献
73.
In this paper, we study the effect of the drain current on terahertz detection for Si metal-oxide semiconductor fieldeffect transistors(MOSFETs) both theoretically and experimentally. The analytical model, which is based on the smallsignal equivalent circuit of MOSFETs, predicts the significant improvement of the voltage responsivity Rv with the bias current. The experiment on antennas integrated with MOSFETs agrees with the analytical model, but the Rv improvement is accompanied first by a decrease, then an increase of the low-noise equivalent power(NEP) with the applied current. We determine the tradeoff between the low-NEP and high-Rv for the current-biased detectors. As the best-case scenario, we obtained an improvement of about six times in Rv without the cost of a higher NEP. We conclude that the current supply scheme can provide high-quality signal amplification in practical CMOS terahertz detection. 相似文献
74.
M. Bargallo Gonzalez E. Simoen N. Naka Y. Okuno G. Eneman A. Hikavyy P. Verheyen R. Loo C. Claeys V. Machkaoutsan P. Tomasini S.G. Thomas J.P. Lu R. Wise 《Materials Science in Semiconductor Processing》2008,11(5-6):285
The purpose of this paper is to evaluate the impact of the geometry of embedded Si1−xGex source/drain junctions on the stress field. Stress simulations were performed using TSUPREM4 2D software to further investigate the elastic strain relaxation as a function of Si1−xGex alloy active size, in the regime where no plastic relaxation is present. Moreover, the role of the epilayer thickness and the Ge content on the stress levels is also discussed. The work is complemented with experimental Raman spectroscopy. 相似文献
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78.
This paper presents a toolbox in which a compact high abstraction level formulation of the MOS drain current was implemented. The formulation is based on the popular ACM compact MOS model: the approximations introduced in the model preserve the drain-to-source device symmetry and the continuity between all regions of operation (i.e. weak, moderate and strong inversion). The technological parameters involved in the formulation are obtained by means of a fully automatic extraction procedure. Finally, a detailed case study, in which a behavioural analysis of sample-and-hold circuits using the proposed toolbox is performed, is presented. The ATMEL® CMOS process was used as reference for the case study. The MATLAB® environment was used to implement the drain current model formulation, the technological parameters extraction and the case study as well. 相似文献
79.
Hot-carrier degradation for 90nm gate length LDD-NMOSFET with ultra-thin gate oxide under low gate voltage stress 下载免费PDF全文
The hot-carrier degradation for 90~nm gate length lightly-doped drain
(LDD) NMOSFET with ultra-thin (1.4~nm) gate oxide under the low gate
voltage (LGV) (at Vg=Vth, where Vth is the
threshold voltage) stress has been investigated. It is found that the
drain current decreases and the threshold voltage increases after the
LGV (Vg=Vth stress. The results are opposite to the
degradation phenomena of conventional NMOSFET for the case of this
stress. By analysing the gate-induced drain leakage (GIDL) current
before and after stresses, it is confirmed that under the LGV stress
in ultra-short gate LDD-NMOSFET with ultra-thin gate oxide, the hot
holes are trapped at interface in the LDD region and cannot shorten
the channel to mask the influence of interface states as those in
conventional
NMOSFET do, which leads to the different degradation phenomena from those of the
conventional NMOS devices. This paper also discusses the degradation in the
90~nm gate length LDD-NMOSFET with 1.4~nm gate oxide under the LGV stress at
Vg=Vth with various drain biases. Experimental results show that
the degradation slopes (n) range from 0.21 to 0.41. The value of
n is
less than that of conventional MOSFET (0.5-0.6) and also that of the long gate
length LDD MOSFET (\sim0.8). 相似文献
80.