Dielectric analysis of polystyrene microcapsules using scanning dielectric microscope

 A dielectric imaging technique with a scanning dielectric microscope was applied to polystyrene microcapsules in an aqueous environment to study the electrical properties of individual ones. The dielectric images obtained over a frequency range from 10 kHz to 10 MHz showed frequency dependence, which indicated dielectric dispersion (or relaxation) due to interfacial polarization or the build up of charge on the boundaries between the microcapsule shell and the aqueous phases. The dielectric dispersion was analyzed based on an equivalent electrical circuit model and a shell-sphere model in which a spherical core is covered with an insulating shell. Received: 26 September 1997 Accepted: 26 December 1997     

Thermal investigation of PEG 4000 — oxazepam binary system

A thermal study using DSC and Hot Stage Microscopy (HSM) was carried out to investigate the interaction in solid state of the binary system PEG 4000 — oxazepam, and to establish their phase diagram. The eutectic composition, which melting occurs at lower temperature as compared with the pure components, has been determined. The results obtained by DSC and HSM have indicated that PEG 4000 — oxazepam mixtures displays no obvious incompatibilities, and that the system shows a typical eutectic behaviour. However because of the closeness of the melting of PEG 4000 to the eutectic temperature, it was difficult to determine precisely the eutectic composition and temperature on the basis of DSC measurements alone. The use of heats of fusion corresponding to physical mixtures allowed an estimation of the eutectic composition at 6% w/w oxazepam. Additional information of temperature (57.6C) and composition (5–10% w/w oxazepam) of the eutectic was obtained by HSM using the contact method. This low melting temperature in this range of compositions offers advantages in terms of drug stability and easy manufacture.     

Lattice dynamical study of body-centred tetragonal indium

The phonon dispersion curves, phonon frequency distribution function as well as the lattice specific heat of body-centred tetragonal indium have been deduced using a lattice dynamical model which includes central, angular and volume forces. Six elastic constants, four zone boundary frequencies and an equilibrium condition were used in the evaluation of the force constants. It is shown that this model is elastically consistent and satisfies the symmetry requirements of the lattice, the phonon frequencies of indium deduced from it are in very good agreement with the experimental values of Reichardt and Smith and the theoretical values of Garrett and Swihart, and theθ _D values compare well with the experimental values over a wide temperature range. The apparent discrepancies in the phonon dispersion curves and theθ _D-T curves obtained from deficient models, importance of umklapp processes and the significance of angular forces in the lattice dynamical models are discussed.     

TiO2-双亲共聚物复合纳米粒子的合成与紫外光敏特性

用偶联剂乙烯基三乙氧基硅烷改性纳米粒子TiO₂, 应用超声技术将TiO₂ 纳米粒子分散在甲醇介质中, 然后用苯乙烯(ST)原位聚合包封, 再用丙烯酰胺或乙烯基吡咯烷酮(VP)共聚, 两步原位分散聚合得到了有机聚合物为壳、TiO₂为核的有机/无机复合粒子. 用红外光谱、紫外-可见光谱、透射电子显微镜等检测手段进行表征. 结果显示: 由于双亲共聚物对TiO₂纳米粒子的敏化作用, 紫外-可见光谱图上两种纳米复合粒子的最大吸收峰均有明显红移, 并且吸收光谱的范围扩大了, 其中尤以TiO₂/(PST-co-PVP)为甚. 意味着光敏化活性的提高, 特别是在可见光谱的范围内. 这种情形对宽带隙半导体材料如TiO₂纳米粒子的光催化特性是有利的, 表明这类材料的应用空间得到了拓展.     

偏振模色散前馈方案中偏振主态研究

前馈偏振模色散（PMD）补偿系统中重要的一项是要精确得到链路中的偏振主态（PSP）方向。通过在实验中加入扰偏器，分别用矢量法和粒子群优化（PSO）算法来拟合实验结果得到椭球，从而用椭球法得出了主态方向。结果表明：矢量法在获得椭球要比PSO算法更精确、速度更快以及所得到PSP方向更准确，其更适合用于前馈补偿方案中。     

晶体型二阶偏振模色散模拟器

报道了一种新型的二阶晶体型偏振模色散(PMD)模拟器,其由3片可产生不同的一阶PMD差分群延迟(DGD)的晶体和1个法拉第旋转器组成,法拉第旋转器理论上可在180°内连续变化。该二阶PMD模拟器实验上能近似模拟从50到200 ps2的二阶PMD。给出了二阶PMD随偏置电压变化的曲线。实验表明,该器件输出的重复性好,响应时间小于1 ms,实验值与理论值近似符合。     

光纤和光缆的偏振模色散系数研究

综述了偏振模色散的概念、偏振模色散对光传输系统的影响、系统对单模光纤偏振模色散系数的要求,以及获得小的偏振模色散光纤和光缆的方法.     

Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates

AlGaN/GaN high electron mobility transistors (HEMTs) with Si and Al₂O₃ substrates reveals anomalies on I_ds-V_ds-T and I_gs-V_gs-T characteristics (degradation in drain current, kink effect, barrier height fluctuations, etc.). Stress and random telegraph signal (RTS) measurements prove the presence of trap centers responsible for drain current degradation. An explanation of the trapping mechanism responsible for current instabilities is proposed. Deep defects analysis performed by capacitance transient spectroscopy (C-DLTS), frequency dispersion of the output conductance (G_ds(f)), respectively, on gate/source and drain/source contacts and RTS prove the presence of deep defects localized, respectively, in the gate and in the channel regions. Defects detected by C-DLTS and G_ds(f) are strongly correlated, respectively, to barrier height inhomogeneities and kink anomalies. Gate current analysis confirms the presence of (G-R) centers acting like traps at the interface GaN/AlGaN. Finally, the localization of these traps defects is proposed.     

非线性耦合KdV方程组的精确行波解

利用构造辅助函数和辅助常微分方程组的方法,给出了非线性耦合KdV方程的某些新的精确行波解,其中包括孤波解和周期解.     

A facile approach to prepare water-soluble magnetic metal (oxide) frameworks based on Na,Ca alginate and maghemite

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