A New Algorithm for the Elimination of Common Subexpressions in Hardware Implementation of Digital Filters by Using Genetic Programming

A new algorithm based on Genetic Programming (GP) for the problem of optimization of Multiple constant Multiplication (MCM) by Common Subexpression Elimination(CSE) is developed. This method is used for hardware optimization for DSP systems. A solution based on Genetic Programming is shown in this paper. The performance of the technique is demonstrated in one- and multi-dimensional digital filters with constant coefficients.     

Organic Electroluminescent Thin Film Using 8—hydroxyquinoline Zinc as Emitting Layer

Organic electroluminescent thin film using Znq2(Znq2) as the emitting layer material with structure of glass/ITO/Znq2/Al(cell) was fabricated.The V-I curve ,V-B curve and electroluminescent spectra of the cell were measured.Meanwhile the fluorescent spectra, excited spectra and absorption spectra of Znq2 with power and film states were also measured.     

实用宽带新技术

简要介绍了三种宽带新技术及其应用，包括替代五类线的VDSL，可解决HFC上行噪音漏斗效应的SCDMA技术以及利用电源线传输高速数据的PLC技术。这些新技术由于具有较高的性能价值比和广阔的应用前景，受到了广泛的关注。     

Dynamic response of permalloy/Cu/Co magnetoresistive sandwiches

The dynamic response of trilayer magnetoresistive permalloy/Cu/Co films was studied by high-frequency permeability spectra measurements. The resonance frequency is shown to depend on the interlayer copper thickness. This dependence is related to exchange coupling between permalloy and cobalt and the interaction field is estimated using the Landau–Lifschitz–Gilbert model.     

非晶硅薄膜的低温快速晶化及其结构分析

在镀铝的廉价玻璃衬底上高速沉积的非晶硅薄膜在不同的温度下退火10min.退火温度为500℃时,薄膜表面形成了硅铝的混合相,非晶硅薄膜开始呈现了晶化现象 退火温度为550℃时,大部分(约80%)的非晶硅晶化为多晶硅,平均晶粒尺寸为500nm 退火温度为600℃时,几乎所有的非晶硅都转化为多晶硅,其平均晶粒尺寸约为15μm.     

过氧聚钨酸薄膜上光栅的制备

用过氧聚钨酸（PPTA）水溶液，通过离心涂膜法在显微镜载玻片上制备了具有光滑表面且厚度为100nm的PPTA薄膜，利用PPTA薄膜在紫外光照下可研制光栅以及其它光学元件的薄膜材料，具有很高的利用价值。     

数码相机引入科技照像实验

介绍了数码相机的系统结构和工作原理，通过与传统相机的对比分析，在科技照相实验中应该使用数码相机。     

Temperature effect on deposition rate of silicon nitride films

Temperature effects on deposition rate of silicon nitride films were characterized by building a neural network prediction model. The silicon nitride films were deposited by using a plasma enhanced chemical vapor deposition system and process parameter effects were systematically characterized by 2⁶⁻¹ fractional factorial experiment. The process parameters involved include a radio frequency power, pressure, temperature, SiH₄, N₂, and NH₃ flow rates. The prediction performance of generalized regression neural network was drastically improved by optimizing multi-valued training factors using a genetic algorithm. Several 3D plots were generated to investigate parameter effects at various temperatures. Predicted variations were experimentally validated. The temperature effect on the deposition rate was a complex function of parameters but N₂ flow rate. Larger decreases in the deposition rate with the temperature were only noticed at lower SiH₄ (or higher NH₃) flow rates. Typical effects of SiH₄ or NH₃ flow rate were only observed at higher or lower temperatures. A comparison with the refractive index model facilitated a selective choice of either SiH₄ or NH₃ for process optimization.     

具有消息恢复的数字签名方案的一个注记

对具有消息恢复的数字签名方案提出了两种攻击方法.此外,对原方案进行了改进,通过对改进方案的安全性分析得出结论:改进方案比原方案更安全,并且消息恢复过程只需要计算一次大数模幂乘和两次单向函数.