Strain effects on multiferroic BiFeO3 films

The field of multiferroics has experienced a rapid progress resulting in the discovery of many new physical phenomena. BiFeO₃ (BFO) compound, which is one of the few room-temperature single-phase multiferroics, has contributed subsequently to this progress. As a result, significant review articles have been devoted specifically to this famous system. This chapter is dedicated to the strain effects on the structure stability and property changes of BFO thin films. It is a short and non-exhaustive topical overview that may be seen as an invitation for interested readers to go beyond. There is a very active and prolific research in this field and we apologize to the authors whose relevant work is not cited here. After a short introduction, we will thus review the effect of strain on BFO films by describing the consequences on the structure and the phase transitions as well as on polar, magnetic and magnetoelectric properties.     

Formation of ST12 phase Ge nanoparticles in ZnO thin films

In this work, we focus on the Ge nanoparticles (Ge-np) embedded ZnO multilayered thin films. Effects of reactive and nonreactive growth of ZnO layers on the rapid thermal annealing (RTA) induced formation of Ge-np have been specifically investigated. The samples were deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively on Si substrates. As-prepared thin film samples have been exposed to an ex-situ RTA at 600 °C for 60 s under forming gas atmosphere. Structural characterizations have been performed by X-ray Diffraction (XRD), Raman scattering, Secondary Ion Mass Spectroscopy (SIMS), and Scanning Electron Microscopy (SEM) techniques. It has been realized that reactive or nonreactive growth of ZnO layers significantly influences the morphology of the ZnO: Ge samples, most prominently the crystal structure of Ge-np. XRD and Raman analysis have revealed that while reactive growth results in a mixture of diamond cubic (DC) and simple tetragonal (ST12) Ge-np, nonreactive growth leads to the formation of only DC Ge-np upon RTA process. Formation of ST12 Ge-np has been discussed based on structural differences due to reactive and nonreactive growth of ZnO embedding layer.     

基于DIS数字信息化系统对透光物质透光性能的研究

采用DIS数字信息化系统,对不同浓度的蓝墨水溶液在激光光源照射下的透射平均照度及照度分布图像进行实验研究,得到了平均照度值随溶液浓度变化的规律。对不同颜色塑料膜片对白炽灯光源透过照度值及照度分布图像进行实验研究得到及其相关之规律。     

个性化公开密钥系统的设计

论文提出利用用户提供的个性化信息来随机产生关联大素数,保证了素数选取的随机化、个性化,提高了RSA算法的安全性。     

一种基于无理数加密算法的数字签名方案

为了提高现代网络信息传输的安全性,利用无理数小数点后数字的无穷性、无规律性、分布均匀性,提出一种全新的加密算法,并用它所产生的密钥流进行数字签名,实现身份验证不可抵赖、信息传输无篡改,确保信息传输的完整性、真实性,达到提高加密效率、相互认证的效果。     

小型机载数字视频记录系统的设计与实现

采用嵌入式控制模块SOM2386和专用视频处理芯片SZ1510,设计和实现了一种基于电子硬盘存储的嵌入式小型机载数字视频记录系统。给出了系统总体方案,阐述了视音频解码编码、接口、控制及存储单元的硬件设计,介绍了系统的软件设计,并给出了系统软件的整体工作流程。该系统体积小、重量轻、抗震性好、使用维护方便,已在某型飞机上得到应用。     

移动网络中的独立式安全管理系统

本文提出一种适用于移动网络的安全管理系统,由于访问网络能够独立地对漫游用户进行认证,所以称该系统为独立式安全管理(ISM).基于ISM设计一种漫游用户的认证协议,通过对协议的比较分析可以看出,相对于其它安全管理系统,ISM的突出优点是安全责任划分清晰、认证效率高.     

新型的芯片间互连用CMOS/BiCMOS驱动器

从改善不同类型 IC芯片之间的电平匹配和驱动能力出发 ,设计了几例芯片间接口 (互连 )用 CMOS/Bi CMOS驱动电路 ,并提出了采用 0 .5 μm Bi CMOS工艺 ,制备所设计驱动器的技术要点和元器件参数。实验结果表明所设计驱动器既具有双极型电路快速、大电流驱动能力的特点 ,又具备 CMOS电路低压、低功耗的长处 ,因而它们特别适用于低电源电压、低功耗高速数字通信电路和信息处理系统。     

浅谈县级有线电视网络的改造

就嘉善有线电视网络在适应数字电视传输时存在的问题以及今后网络的整体改造进行探讨。     

利用静电学和测量数据对碳纳米管膜场致发射规律的定量分析

碳纳米管膜的场致发射电流密度仅由它表面的宏观电场决定，无论其表面形状是平的还是半球状的。对于理想的平行板电极系统，其表面电场强度均匀（UId），发射电流密度、总电流与发射面积成正比：对于半球一平面电极系统半球形的阴极存在一个宏观场增强因子ks，一个与两极距离和球半径之比（d/r）相关的函数，其表面的平均场强为ks U/d。对于d/r=0，ks=1，d≥r的情况，ks接近于常数。对于10〈d／r〈100的情况，存在一个经验的表达式：ks=1＋0．15d/s=0．005（d／r）^2。在引入ks后，不同作者给出的平面电极系统和半球一平面电极系统碳纳米管膜的场致发射电流I与宏观表面电场强度E的关系都可以近似用-经验公式描述：I=a（E-Eo）^b，a，b为常数。该经验公式可为稳定生产的CNT膜片应用产品设计提供方便。