Development of Na+-sensitive membranes based on sputtered Na-Al-Si glasses

Na⁺-sensitive microdevices are of increasing interest for integration in microanalytical systems e.g. for biomedical applications or for industrial process control. In order to produce ultra thin Na⁺-sensitive layers with fixed and reproducible composition and, in particular, defined Na concentration by means of RF sputtering, an off-axis geometry of a magnetron with cylindrical target was chosen for minimizing back-sputtering effects from the already deposited material. With this inverted cylindrical magnetron (ICM) it was possible to obtain reproducible and controllable sodium aluminosilicate glass layers on semiconductor substrates. Several surface and thin layer analytical techniques were applied for characterization of the membranes and for stoichiometry control. Especially by the non-destructive nuclear reaction analysis method a constant Na profile throughout the glass layer and — together with AES depth profiles — the diffusion barrier effect of an Si₃N₄ interface layer could be verified. Electrochemical measurements proved Nernstian sensitivity down to 10^–4 M Na⁺ in solutions of pH 7, supporting sufficient stability and reproducibility of the sputtered Na⁺-sensitive layers.     

Analysis of nitrogen-influenced surface near zones of ferrous materials by glow discharge spectroscopy (GDOS)

Glow discharge spectroscopy (GDOS) will be shown to be a quick, informative and simple method for quantitative depth profile analysis of elements of nitrided layers well suited for their quality control. By systematic variation of all glow discharge determining parameters it is possible to get an excellent depth resolution in the order of sub-m corresponding to a comparatively large analytical activated area (50 mm²). In this paper the behaviour of a number of important parameters related to sputtering of the activated area will be discussed. Some quantitative GDOS depth profiles of carbon and nitrogen of pure iron samples nitrided by different procedures will be shown as examples for application.     

Oxygen diffusion in SrCe<Subscript>0.95</Subscript>Yb<Subscript>0.05</Subscript>O<Subscript>3−δ</Subscript>

¹⁸O/¹⁶O isotope exchange depth profiling (IEDP) combined with secondary ion mass spectrometry (SIMS) has been used to measure the oxygen tracer diffusivity of SrCe_0.95Yb_0.05O_3– between 800 °C and 500 °C at a nominal pressure of 200 mbar. The values of D* (oxygen tracer diffusion coefficient) and k (surface exchange coefficient) increase steadily with increasing temperature, and the activation energies are 1.13 eV and 0.96 eV, respectively. Oxygen ion conductivities have been calculated using the Nernst–Einstein equation. The transport number for oxide ions at 769 °C, the highest temperature studied, is only ~0.05. Moreover, SrCe_0.95Yb_0.05O_3– has been studied using impedance spectroscopy under dry O₂, wet O₂ and wet H₂ (N₂/10% H₂) atmospheres, over the range 850–300 °C. Above ~550 °C, SrCe_0.95Yb_0.05O_3– shows higher conductivity in dry O₂ than in wet O₂ or wet H₂; below that temperature the results obtained for the three atmospheres are comparable. Dry O₂ shows the highest activation energy (0.77 eV); the activation energies for wet O₂ and wet H₂ are identical (0.62 eV).Abbreviations HTPC high-temperature proton conductor - IEDP isotope exchange depth profiling - SIMS secondary ion mass spectrometryPresented at the OSSEP Workshop Ionic and Mixed Conductors: Methods and Processes, Aveiro, Portugal, 10–12 April 2003     

Degradation of poly(acrylates) under SF5+ primary ion bombardment studied using time‐of‐flight secondary ion mass spectrometry. 1. Effect of main chain and pendant methyl groups

Polyatomic primary ions have been applied recently to the depth profiling of organic materials by secondary ion mass spectrometry (SIMS). Polyatomic primary ions offer low penetration depth and high damage removal rates in some polymers, but the relationship between polymer chemistry and degradation under polyatomic primary ion bombardment has not been studied systematically. In this study, positive and negative ion time‐of‐flight SIMS (ToF‐SIMS) was used to measure the damage of ～100 nm thick spin‐cast poly(methyl methacrylate) (PMMA), poly(methyl acrylate) (PMA) and poly(methacrylic acid) (PMAA), films under extended (～2 × 10¹⁴ ions cm^?2) 5 keV SF₅⁺ bombardment. These polymers were compared to determine the effect of the main chain and pendant methyl groups on their degradation under SF₅⁺ bombardment. The sputter rate of PMMA was approximately twice that of PMA or PMAA and the rate of damage accumulation was higher for PMA and PMAA than PMMA, suggesting that the main chain and pendant methyl groups played an important role in the degradation of these polymers under SF₅⁺ bombardment. These results are consistent with the literature on the thermal and radiation‐induced degradation of these polymers, which show that removal of the main chain or pendant methyl groups reduces the rate of depolymerization and increases the rate of intra‐ or intermolecular cross‐linking. Copyright © 2004 John Wiley & Sons, Ltd.     

Development of B‐doped Si multiple delta‐layer reference materials for SIMS profiling

B‐doped Si multiple delta‐layers (MDL) were developed as certified reference materials (CRM) for secondary ion mass spectrometry (SIMS) depth profiling analysis. Two CRMs with different delta‐layer spacing were grown by ion beam sputter deposition (IBSD). The nominal spacing of the MDL for shallow junction analysis is 10 nm and that for high energy SIMS is 50 nm. The total thickness of the film was certified by high resolution transmission electron microscopy (HR‐TEM). The B‐doped Si MDLs can be used to evaluate SIMS depth resolution and to calibrate the depth scale. A consistency check of the calibration of stylus profilometers for measurement of sputter depth is another possible application. The crater depths measured by a stylus profilometer showed a good linear relationship with the thickness measured from SIMS profiling using the calibrated film thickness for depth scale calibration. The sputtering rate of the amorphous Si thin film grown by sputter deposition was found to be the same as that of the crystalline Si substrate, which means that the sputtering rate measured with these CRMs can be applied to a real analysis of crystalline Si. Copyright © 2005 John Wiley & Sons, Ltd.     

Behavior and process of background signal formation of hydrogen,carbon, nitrogen,and oxygen in silicon wafers during depth profiling using dual-beam TOF-SIMS

The behavior and mechanism of background signals during depth profiling of atmospheric elements using dual-beam time-of-flight secondary ion mass spectrometry (TOF-SIMS) have been experimentally investigated for silicon wafers. The background signals of atmospheric elements were found to be inversely proportional to the sputtering rate. Most of the background signals are largely attributable to the accumulation of components through adsorption and ion bombardment in the pre-equilibrium state. On the other hand, the contribution of real-time adsorption during the instant after the last sputtering in the equilibrium state is negligible under the present experimental conditions. H₂O is dominant in the background formation process of hydrogen and oxygen, which is supported by the higher adsorption coefficients. The background levels of carbon and nitrogen are lower than those of hydrogen and oxygen. Furthermore, the background signal of carbon with respect to the sputtering rate shows a different trend than the other elements. This could be attributed to accumulation in the pre-equilibrium state. These results indicate that the background levels can be lowered close to those of dynamic-SIMS by using an extremely high sputtering rate in dual-beam TOF-SIMS.     

Eco-dyeing and functional finishing of wool fabric based on Portulaca oleracea L. as colorant and Musa basjoo as natural mordant

Biomass energy is the most acknowledged renewable resource due to its universality, richness, and renewability. This study utilized a Portulaca oleracea L. plant as a natural colorant for wool fabric dyeing with a high color yield at optimum extraction and dyeing conditions. To evaluate the dyeing mechanism and feasibility of the extracted dyes, we analyzed and characterized the molecular structure and nano-level particle size. The dyeing kinetics and the morphology of dyed fabrics were integratedly explored; the adsorption process of wool fabric on natural colorant molecules was increasingly in line with the pseudo-second-order kinetic adsorption model. Further, the dyeing effects of wool fabrics were compared to that of Musa basjoo mordant and synthetic dyes to confirm the superior color depth (K/S value 23.53), biological function as anti-ultraviolet (UPF value 253.47), and anti-bacterial activity (antibacterial rate of Staphylococcus aureus/Escherichia coli was 71.3%/37%). Our findings provide a feasible scheme for providing deep color and biological activity to wool fabrics. This has broad application prospects in the field of eco-friendly textile materials.     

Investigation of Al diffusion in different oxide thin-film layers by SNMS/HFM method

Depth profiles of Ga₂O₃/a-SiO₂/Al₂O₃- substrate, Ga₂O₃/a-Si₃N₄/Al₂O₃- substrate, and Ga₂O₃/Al₂O₃ substrate thin layers were determined by the SNMS/HFM method. Al diffusion from the Al₂O₃ substrate was investigated after 50, and in some cases after 600 hours of heat treatment time at different temperatures (600 °C,850 °C,950 °C,1050 °C and 1150 °C). The diffusion coefficient of Al at 850 °C was found to be D _Al=8.7 * 10^–18 cm²/s in amorphous SiO₂; D _Al=1.5*10^–17 cm²/s in amorphous Si₃N₄ and D _Al=5.5* 10^–16 cm²/s in Ga₂O₃ at 600 °C, respectively. The possible diffusion mechanism is explained in terms of the metal-oxygen bond-strengths. Although the studied materials have high resistivity at room temperature, the applied SNMS/HFM method has proven to be an efficient surface analytical tool even in these cases.Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday     

Interpretation of Auger depth profiles of thin SiC layers on Si

Silicon carbide thin films, prepared by carbonization of Si-wafers are analysed by Auger depth profiling. The influence of atomic mixing is simulated with a Monte Carlo model. By using mixing simulations the dependence of the two mixing parameters (width of the mixing zone and recoil depth) on ion beam energy, incidence angle and ion mass can be calculated. For comparison of the simulated data with Auger measurements an Auger electron escape depth correction is necessary. The simulated and -corrected data of several layer structures show good qualitative agreement with Auger depth profiles of thin carbonized SiC-layers.Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthday     

SIMS depth profiling of ‘frozen’ samples: in search of ultimate depth resolution regime

We have performed secondary ion mass spectrometry depth profiling analysis of III–V based hetero‐structures at different target temperatures and found that both the surface segregation and surface roughness caused by ion sputtering can be radically reduced if the sample temperature is lowered to ?150 °C. The depth profiling of ‘frozen’ samples can be a good alternative to sample rotation and oxygen flooding used for ultra‐low‐energy depth profiling of compound semiconductors. Copyright © 2016 John Wiley & Sons, Ltd.