Localized defects in classical one-dimensional models

Several aspects of localized defects in the Frenkel-Kontorova, classicalXY chain and analogous models with a finite range of interactions are discussed from a general point of view. Precise definitions are given for defect phase shifts (charges) and for creation, pinning, and interaction energies. Corresponding definitions are also provided for interfaces (localized regions separating two phases). For the nearest-neighbor Frenkel-Kontorova model, the various defect energies are related to areas enclosed by contours joining heteroclinic points of the area-preserving map generated by the conditions of mechanical equilibrium.     

Electronic structure of non-magnetic impurities in dilute alloys of Al

The electronic structure of substitutional non-magnetic impurities Cu, Ag, Cd, Mg, Zn, Ga, In, Ge, Si and Sn in Al is studied using density functional theory. A simple physical model is proposed to calculate the effective charges on impurities in trivalent metal Al. A linear relation is found between the effective charges on impurities and impurity vacancy capture radii. The spherical solid model (SSM) is used to account for discrete nature of the host. The impurity-induced change in charge density, scattering phase shifts, host-impurity potential, residual resistivity and impurity self-energy are calculated. Higher order scattering phase shifts are found significant and the host-impurity potential is found proportional to effective charge on impurity in its vicinity. The self-consistently calculated potential is used to calculate the electric field gradients (EFGs) at the first and second nearest neighbours (1NNs, 2NNs) of impurity. The calculated values are in agreement with the experimental results.     

SiO2 gate insulator defects,spatial distributions,densities, types,and sizes

Standard IC processes, as well as those involving the use of ionizing radiation, such as x-ray lithography etc., result in the generation of bulk defects, and interface states in the gate insulator, or underlying substrate, respectively, of insulated gate field effect transistors. Bulk defects are believed to be present as positively and negatively charged electron and hole traps, respectively, as well as neutral hole and “large” and “small” neutral electron traps. This paper provides a perspective of the current state of knowledge about the spatial distributions of large bulk defects, their areal densities, sizes, possible interrelationships among them, and the special cases of defects created by ion implanted silicon and oxygen, where knock-on effects have been simulated. It appears that bulk defects may all have their origin in neutral hole traps, (so-called E′ centers) and that when the insulator thickness is decreased to about 6-7 nm, defects are either no longer present, or, more likely, are incapable of trapping charge at room temperature because trapped carriers can either tunnel to one of the interfaces, or be annihilated by a reverse process. It appears possible also that the precursor of the several types of defects only forms at a “grown” silicon-silicon oxide interface. In theory, this would make it possible to grow defect free insulators by a combination of deposition and oxidation processes.     

A scenario for the electronic state in the manganese perovskites: the orbital correlated metal

We propose a novel scenario for the electronic state in the manganese perovskites. We argue that, at low temperatures and within the ferromagnetic state, the physics of these colossal magnetoresistance compounds may be characterized by a correlated metallic state near a metal insulator transition where the orbital degrees of freedom play the main role. This follows from the observation that a two-band degenerate Hubbard model under a strong magnetic field can be mapped onto a para-orbital single band model. We solve the model numerically using the quantum Monte-Carlo technique within a dynamical mean field theory which is exact in the limit of large lattice connectivity. We argue that the proposed scenario may allow for the qualitative interpretation of a variety of experiments which were also observed in other (early) transition metal oxides. Received: 3 October 1997 / Revised: 9 December 1997 / Accepted: 12 January 1998     

Non-destructive testing of tubes using a time reverse numerical simulation (TRNS) method

A method for the detection of defects in cylindrical structures and the determination of their positions and orientations is presented in this paper. The scattered field, which is generated by the interaction of excited guided waves with a defect, is evaluated with an approach named time reverse numerical simulation method (TRNS). Since the excited waves and the scattered field propagate along the sample, the time-consuming scanning of the whole tube can be eliminated. The scattered displacement field is measured in three dimensions over time with a laser vibrometer at different locations distributed equally around the circumference at a fixed axial coordinate far away from the defect. Instead of analyzing the complicated time signals directly, they are played back in time. If the recorded displacement histories of the scattered field are reversed in time and played back in an identical structure, the waves travel back the same path and interfere to a maximum at their origin. The result is an amplitude increase at the position of the defect where the scattered field was generated. Instead of playing back the recorded time signals in an experiment, this step is replaced by a numerical simulation. Only this enables the visualization and detection of the amplitude increase. As long as the simulation is of high accuracy, the position of the maximum interference corresponds exactly to the location of the defect in the experiment, although no defect is implemented in the simulation.     

N2分压对ZrN/WN纳米多层膜缺陷性质与力学性能的影响

利用射频磁控溅射系统在不同N₂分压的条件下，制备了一系列ZrN/WN纳米多层膜.借助慢正电子湮没技术分析了样品的缺陷性质，采用纳米压痕仪研究了多层膜的力学性能.结果发现：N₂分压为0.4Pa的多层膜具有最小的空位型缺陷浓度，其中心层和膜基结合层的平均S参数分别为0.4402和0.4641，而较低或较高的N₂分压都可能导致空位型缺陷浓度的增加.随着空位型缺陷浓度的减小，多层膜的硬度和临界载荷增大.对于空位型缺陷浓度最小的多层膜，其硬度和临界载荷达到最大值，分别为34.8GPa和100mN，说明较低的缺陷浓度有利于提高多层膜的力学性能. 关键词： ZrN/WN纳米多层膜 缺陷性质 力学性能 慢正电子湮没     

On the flow of thermal defects from the bulk to surfaces

This paper treats flow of defects between bulk and surface sites, as a crystal passes towards equilibrium, for some practical cases. These include the realistic but quite elaborate example in which vacancy flow from the bulk is coupled to surface step edges, acting as sinks, by reaction with adatoms that are believed to dominate transport on metal surfaces. It is shown how surface processes modify the defect flow from the bulk only at short times. Lacking accurate parameters (such as concentrations) for surface defects, a crude modeling of the theoretical results is offered in order to explore likely generic behavior. The model employs a recently described approximate universality of behavior, scaled to the melting temperature, relevant mainly to fcc (1 1 1) surfaces. Under a range of conditions it is the reaction of advacancies with adatoms that provides the important channel for bulk vacancy flow. Adatom flow onto the terraces from surface step edge sinks is the bottleneck to flow above a crossover temperature (depending on step spacing) and equilibrium recombination is the bottleneck below the crossover.     

Field electron emission images of multi-walled carbon nanotubes

Field electron emission microscope images from multi-walled carbon nanotubes can typically be characterized by the presence of five pentagons surrounding a sixth central pentagon. The observations of bright line centered interference patterns between adjacent pentagons in the field electron emission microscope images of multi-walled carbon nanotubes have been reported in the literature. We have observed a shift from bright to dark line centered interference patterns and associated this with the presence of surface adsorption. In order to identify the origin of the contaminant, multi-walled carbon nanotubes were dosed with H₂, H₂O, CO and O₂ and then imaged in the field electron emission microscope. Only the samples exposed to O₂ showed a shift from a bright line centered pattern between adjacent pentagons of a clean surface to a dark line centered pattern when one pentagon was contaminated or a bright line centered pattern when both adjacent pentagons become contaminated. The results of the experimental studies and the modeling of the changes in the field emission pattern as phase shifts in the wave function of the tunneling electrons due to modifications in the surface work function are presented.     

STM image visualization of Si(1 1 1) 7 × 7 surface (graphic simulation and implementation)

The possibilities of graphic STM image simulation of a clean Si(1 1 1) 7 × 7 surface at atomic level are indicated. The presented procedure takes into account various types of deformation on the surface near the Fermi level in order to classify them and explain their origin. It also gives a clear hint to insert relevant physical phenomena in a suggested analysis. This goal is achieved exploiting the results of DAS (dimmer adatom stacing fault) model by means of standard mathematical programmes. A clean Si(1 1 1) 7 × 7 surface is considered as the representative example, but similar evaluation is possible for another non-metal and metal surfaces.     

塑料模具激光精密修复技术的研究

脉冲Nd:YAG激光熔覆技术是精密修复塑料模具最有效的方法之一，激光器的电压、电流、脉冲宽度、脉冲频率与激光的扫描速度、光斑直径等工艺参数直接影响着熔覆的质量。为了综合考虑各工艺参数的影响和简化工艺调整过程，提出了重叠率的观念，建立了重叠率的计算方程。分别采用预置熔覆法和手动送丝法在低碳钢基体上熔覆Ni基合金，获得了最佳工艺参数：单脉冲能量为6.7 J，重叠率为97.4%。利用扫描电子显微镜观察了手动送丝熔覆层存在的冶金缺陷，对其产生的原因进行了初步探讨。