氮原子在Ni平坦和缺陷表面上的吸附和振动

 构造了氮－镍相互作用的5－参数Morse势，研究了氮原子在Ni（\r\n100），Ni（110）和Ni（111）平坦表面的吸附和振动，获得了氮原子\r\n在三个低指数表面的吸附位、吸附构型、结合能和本征振动等数据，计\r\n算结果与实验结果非常吻合．同时，与Ni（100）表面对比，系统研究\r\n了氮原子在Ni（510）台阶面的吸附和扩散．计算结果表明，氮原子在\r\n台阶下部形成最稳定的吸附态，台阶对下台面上扩散的氮原子形成捕获\r\n势，对上台面上扩散的氮原子形成反射势．     

Elektronenlokalisierung im Grundzustand und in angeregten Zuständen Pars-Orbital-Methode, 12. Mitt

UsingGleason's theorem the pars orbital concept is developed for excited states of conjugated systems described by CI-methods. A significance index is introduced to evaluate different patterns of fragmentation. The usefulness of this approach is illustrated for butadiene, biphenyl, naphthalene, and azulene.

11. Mitt.:H. Karpf, O. E. Polansky undM. Zander, Tetrahedron Lett.1978, 2069.     

Adsorption of organic substances on broken clay surfaces: a quantum chemical study

Hydrogen-bonded interactions between local defect structures on broken clay surfaces modeled as molecular clusters and the organic molecules acetic acid, acetate, and N-methylacetamide (NMA) have been investigated. Density functional theory and polarized basis sets have been used for the computation of optimized interaction complexes and formation energies. The activity of the defect structures has been characterized as physical or chemical in terms of the strength of the hydrogen bonds formed. Chemical defects lead to significantly enhanced interactions with stronger hydrogen bonds and larger elongation of OH bonds in comparison to the physical defects. The type of interaction with the defect structure significantly influences the planarity of the model peptide bond in NMA. Both cases, enhancement of the planarity by increase of the CN double bond character and strong deviations from planarity, are observed.     

Carbometallate: Komplexe Anionenverbände [MoC4/26—] in der Kristallstruktur von Pr[MoIIC2]

Carbometalates: Complex Anions equation/tex2gif-stack-4.gif [MoC_4/2^6—] in the Crystal Structure of Pr equation/tex2gif-stack-5.gif [Mo^IIC₂] Criteria for the existence of carbometalates are established and discussed in a broader context. The concept is then applied to the novel compound Pr₂[MoC₂], which is characterized by chemical analyses, X‐ray diffraction and metallography. The crystal structure (tetragonal, P4₂/mnm, Z = 4, a = 581.29(8) pm, c = 1032.53(14) pm) consists of layered polyanions equation/tex2gif-stack-6.gif[MoC_4/2^6—] of distorted vertex and edge sharing MoC₄ tetrahedra. Praseodymium is also in a distorted tetrahedral coordination by carbon. The physical properties show “bad metal” behaviour and localized magnetic 4f‐moments in agreement with the existence of Pr³⁺‐species. A detailed bonding analysis using both the electron localization function ELF and the COHP method justifies the interpretation of the title compound as a carbomolybdate(II).     

铌酸锂晶体性能的组成依赖性(英文)

总结了铌酸锂晶体的各项性能指标,显示了其对晶体实际组成的强烈依赖性.利用化学键模型定量地解释了这种依赖性产生的根源,从而说明了制约该晶体性能提高的关键因素是晶体结构中的缺陷控制.     

二铬四醋酸基簇合物的定域分子轨道研究

利用ＩＮＤＯ自洽场半经验量子化学计算方法和Ｅｄｍｉｓｔｏｎ－Ｒｕｅｄｅｎｂｅｒｇ定域化方法，分别计算了没Ｃｒ－Ｃｒ键长的气相、固相Ｃｒ２（Ｏ２ＣＣＨ３）４分子和沿Ｃｒ－Ｃｒ方向有Ｈ２Ｏ配体的「Ｃｒ２（ＣＯ３）４（Ｈ２Ｏ２）２」＾４－离子的化学键性质，结果表明，Ｃｒ２（Ｏ２ＣＣＨ３）４在气相中存在ｄ四重键，而在固相中则不存在，揭示了四重键长之间的联系，直接给出Ｃｒ－Ｃｒｄ四重键的量子化学图象，并阐明     

Gorenstein AC亏范畴*

作者定义了Gorenstein AC导出范畴 D^b_gac(R)并且和导出范畴作了一些比较.作者定义了Gorenstein AC奇点范畴 D^b_gacsg(R),在这个范畴中具有有限Gorenstein AC- 投射维数的模都是零对象.同时, 作者给出了由Gorenstein AC- 投射模构成的稳定范畴到奇点范畴的三角嵌入 F : GAC → D^b_sg(R) .通过作函子 F 的商引入Gorenstein AC亏范畴 D^b_gacd(R),并且给出三角等价 D^b_gacd(R) = D^b_gacsg(R)     

双重JPEG压缩图像篡改区域检测与定位

对JPEG(joint photographic experts group)图像实施篡改往往会产生双重JPEG(double JPEG,DJPE) 压缩痕迹,分析该痕迹有助于揭示图像压缩历史并实现篡改区域定位。现有算法在图像尺寸较小和质量因子(quality factor,QF) 较低的时候性能不佳,对两个QF的组合情况存在限制。本文提出了一种端到端的混合QF双重JPEG压缩图像取证网络,命名为DJPEGNet。首先,使用预处理层从图像头文件中提取表征压缩历史信息的量化表 (quantization table,Qtable) 特征,将图像从空域转换至DCT(discrete cosine transform)域构造统计直方图特征。然后,将两个特征输入到由深度可分离卷积和残差结构堆叠而成的主体结构,输出二分类结果。最后,使用滑动窗口算法自动定位篡改区域并绘制概率分布图。实验结果表明,在使用不同Qtable集生成的小尺寸数据集上,DJPEGNet所有指标均优于现有最先进的算法,其中ACC提高了1.78%,TPR提升了2.00%,TNR提升了1.60%。     

Defect Engineering of MOF-Based Membrane for Gas Separation

Metal–organic frameworks (MOFs) are highly versatile materials that have been identified as promising candidates for membrane-based gas separation applications due to their uniformly narrow pore windows and virtually unlimited structural and chemical features. Defect engineering of MOFs has opened new opportunities for manipulating MOF structures, providing a simple yet efficient approach for enhancing membrane separation. However, the utilization of this strategy to tailor membrane microstructures and enhance separation performance is still in its infancy. Thus, this summary aims to provide a guideline for tailoring defective MOF-based membranes. Recent developments in defect engineering of MOF-based membranes will be discussed, including the synthesis strategies for defective MOFs, the effects of defects on the gas adsorption properties, gas transport mechanisms, and recently reported defective MOF-based membranes. Furthermore, the emerging challenges and future prospects will be outlined. Overall, defect engineering offers an exciting opportunity to improve the performance of MOF-based gas membranes. However, there is still a long way to go to fully understand the influence of defects on MOF properties and optimize the design of MOF-based membranes for specific gas separation applications. Nonetheless, continued research in this field holds great promise for the development of next-generation membrane-based gas separation technologies.     

Origin of Hole-Trapping States in Solution-Processed Copper(I) Thiocyanate and Defect-Healing by I2 Doping

Solution-processed copper(I) thiocyanate (CuSCN) typically exhibits low crystallinity with short-range order; the defects result in a high density of trap states that limit the device's performance. Despite the extensive electronic applications of CuSCN, its defect properties are not understood in detail. Through X-ray absorption spectroscopy, pristine CuSCN prepared from the standard diethyl sulfide-based recipe is found to contain under-coordinated Cu atoms, pointing to the presence of SCN⁻ vacancies. A defect passivation strategy is introduced by adding solid I₂ to the processing solution. At small concentrations, the iodine is found to exist as I⁻ which can substitute for the missing SCN⁻ ligand, effectively healing the defective sites and restoring the coordination around Cu. Computational study results also verify this point. Applying I₂-doped CuSCN as a p-channel in thin-film transistors shows that the hole mobility increases by more than five times at the optimal doping concentration of 0.5 mol.%. Importantly, the on/off current ratio and the subthreshold characteristics also improve as the I₂ doping method leads to the defect-healing effect while avoiding the creation of detrimental impurity states. An analysis of the capacitance-voltage characteristics corroborates that the trap state density is reduced upon I₂ addition.