BODIPY-based Fluorescent Probe for Fast Detection of Hydrogen Sulfide and Lysosome-targeting Applications in Living Cells

Hydrogen sulfide (H₂S) is recognized as an endogenous gaseous signaling agent in many biological activities. Lysosomes are the main metabolic site and play a pivotal role in cells. Herein, we designed and synthesized two new fluorescent probes BDP-DNBS and BDP-DNP with a BODIPY core to distinguish H₂S. The sensing mechanism is based on the inhibition-recovery of the photo-induced electron transfer (PET) process. Through comparing the responsive behaviors of the two probes toward H₂S, BDP-DNBS showed a fast response time (60 s), low limit of detection (LOD, 51 nM), high sensitivity and selectivity. Moreover, the reaction mechanism was demonstrated by mass spectrometry and fluorescence off-on mechanism was proved by density functional theory (DFT). Significantly, confocal fluorescence imaging indicated that BDP-DNBS was successfully used to visualize H₂S in lysosomes in living HeLa cells.     

Defect Engineering and Anisotropic Modulation of Ionic Transport in Perovskite Solid Electrolyte LixLa(1−x)/3NbO3

Solid electrolytes, such as perovskite Li_3xLa_2/1−xTiO₃, Li_xLa_(1−x)/3NbO₃ and garnet Li₇La₃Zr₂O₁₂ ceramic oxides, have attracted extensive attention in lithium-ion battery research due to their good chemical stability and the improvability of their ionic conductivity with great potential in solid electrolyte battery applications. These solid oxides eliminate safety issues and cycling instability, which are common challenges in the current commercial lithium-ion batteries based on organic liquid electrolytes. However, in practical applications, structural disorders such as point defects and grain boundaries play a dominating role in the ionic transport of these solid electrolytes, where defect engineering to tailor or improve the ionic conductive property is still seldom reported. Here, we demonstrate a defect engineering approach to alter the ionic conductive channels in Li_xLa_(1−x)/3NbO₃ (x = 0.1~0.13) electrolytes based on the rearrangements of La sites through a quenching process. The changes in the occupancy and interstitial defects of La ions lead to anisotropic modulation of ionic conductivity with the increase in quenching temperatures. Our trial in this work on the defect engineering of quenched electrolytes will offer opportunities to optimize ionic conductivity and benefit the solid electrolyte battery applications.     

基于压缩感知的矢量阵聚焦定位方法

本文针对噪声源近场定位识别问题,利用声源分布在空间域具有稀疏性,在压缩感知理论框架下建立了新体系下的矢量阵聚焦波束形成方法,用于解决同频相干声源的定位识别问题.新方法可在小快拍下准确获得噪声源的空间位置,且不损失对噪声源贡献相对大小的评价能力.通过详细的理论推导、仿真分析和试验验证,证明了基于压缩感知的矢量阵聚焦定位新方法本质上实现了l1范数正则化求解下的波形恢复和空间谱估计,因此具有较高的定位精度,较强的相干声源分辨能力、准确的声源贡献相对大小评价能力以及较高的背景压制能力,可应用于水下复杂噪声源的定位识别.     

一维相位缺陷量子行走的共振传输

从分立时间量子行走理论出发, 分别在包含两个格点相位缺陷和一段格点相位缺陷(方相位势)的一维格点线上研究量子行走的静态共振传输. 利用系统独特的色散关系和边界点上的能量守恒条件, 获得量子行走通过缺陷区域的透射率, 讨论了相位缺陷的强度和宽度不同时透射率随入射动量的变化行为. 在相位缺陷强度π/2两侧, 透射率表现出不同的共振特性, 并给出了强缺陷强度下共振峰和缺陷宽度的关系.     

基于质心迭代估计的无线传感器网络节点定位算法

针对无线传感器网络非测距定位方法的应用,提出了基于质心迭代估计的节点定位算法.该算法首先计算当前连通信标节点所围成的平面质心的坐标及其与未知节点间的接收信号强度,然后用计算所得质心节点替代距离未知节点最远的连通信标节点,缩小连通信标节点所围成的平面,并通过多次迭代的方法提高节点定位精度.仿真实验结果表明,该算法的各项指标均为良好,适用于无线传感器网络的节点定位.     

First‐principles identification of defect levels in Er‐doped GaN

Erbium (Er) doped GaN has been studied extensively for optoelectronic applications, yet its defect physics is still not well understood. In this work, we report a first‐principles hybrid density functional study of the structure, energetics, and thermodynamic transition levels of Er‐related defect complexes in GaN. We discover for the first time that Er_Ga–C_N–V_N, a defect complex of Er, a C impurity, and an N vacancy, and Er_Ga–O_N–V_N, a complex of Er, an O impurity, and an N vacancy, form defect levels at 0.18 eV and 0.46 eV below the conduction band, respectively. Together with Er_Ga–V_N, a complex of Er and an N vacancy which has recently been found to produce a donor level at 0.61 eV, these defect complexes provide explanation for the Er‐related defect levels observed in experiments. The role of these defects in optical excitation of the luminescent Er center is also discussed.     

Reprint of : Shot noise fluctuations in disordered graphene nanoribbons near the Dirac point

Random fluctuations of the shot-noise power in disordered graphene nanoribbons are studied. In particular, we calculate the distribution of the shot noise of nanoribbons with zigzag and armchair edge terminations. We show that the shot noise statistics is different for each type of these two graphene structures, which is a consequence of the presence of different electron localizations: while in zigzag nanoribbons electronic edge states are Anderson localized, in armchair nanoribbons edge states are absent, but electrons are anomalously localized. Our analytical results are verified by tight binding numerical simulations with random hopping elements, i.e., off diagonal disorder, which preserves the symmetry of the graphene sublattices.     

Reprint of : Spin polarization induced by an electric field in the presence of weak localization effects

We evaluate the spin polarization (Edelstein or inverse spin galvanic effect) and the spin Hall current induced by an applied electric field by including the weak localization corrections for a two-dimensional electron gas. We show that the weak localization effects yield logarithmic corrections to both the spin polarization conductivity relating the spin polarization and the electric field and to the spin Hall angle relating the spin and charge currents. The renormalization of both the spin polarization conductivity and the spin Hall angle combine to produce a zero correction to the total spin Hall conductivity as required by an exact identity. Suggestions for the experimental observation of the effect are given.     

Local strain and defects in silicon wafers due to nanoindentation revealed by full‐field X‐ray microdiffraction imaging

Quantitative characterization of local strain in silicon wafers is critical in view of issues such as wafer handling during manufacturing and strain engineering. In this work, full‐field X‐ray microdiffraction imaging using synchrotron radiation is employed to investigate the long‐range distribution of strain fields in silicon wafers induced by indents under different conditions in order to simulate wafer fabrication damage. The technique provides a detailed quantitative mapping of strain and defect characterization at the micrometer spatial resolution and holds some advantages over conventional methods.