向列相液晶弹性各向异性诱导液晶盒产生漏光的研究

为了阐述具有体缺陷结构的向列相液晶盒在暗态出现漏光的原因,以及边界锚定条件对漏光的影响,首先,建立了3个向列相液晶盒模型,它们具有不同的初始指向矢排布。接着,基于Landau-de Gennes理论,通过对指向矢场的缺陷动力学计算,得到液晶盒截面内平衡态的指向矢分布。最后,使用琼斯矩阵法将该截面内的指向矢分布以透过率的形式表示出来。模拟结果显示,在无外场条件下,当向列相液晶的弹性常数满足L2/L1≥1(K22/K11≤2/3)时,具有体缺陷结构的液晶盒展现出了自发的扭曲结构,导致了漏光的出现。且漏光强度随着缺陷结构和边界条件的不同而不同。本文模型很好地解释了体缺陷造成液晶盒在暗态出现漏光的原因,且模拟结果与工业生产过程中观察到的现象是一致的。     

The Effects of Embedded Dipoles in Aromatic Self‐Assembled Monolayers

Using a representative model system, here electronic and structural properties of aromatic self‐assembled monolayers (SAMs) are described that contain an embedded, dipolar group. As polar unit, pyrimidine is used, with its orientation in the molecular backbone and, consequently, the direction of the embedded dipole moment being varied. The electronic and structural properties of these embedded‐dipole SAMs are thoroughly analyzed using a number of complementary characterization techniques combined with quantum‐mechanical modeling. It is shown that such mid‐chain‐substituted monolayers are highly interesting from both fundamental and application viewpoints, as the dipolar groups are found to induce a potential discontinuity inside the monolayer, electrostatically shifting the core‐level energies in the regions above and below the dipoles relative to one another. These SAMs also allow for tuning the substrate work function in a controlled manner independent of the docking chemistry and, most importantly, without modifying the SAM‐ambient interface.     

一种宽频带双极化印刷偶极子基站天线

设计并优化了一款适用于LTE天线系统的基站天线振子单元。在印刷偶极子天线以及微带巴伦的基础上,通过等效电路模型进行分析,设计出该天线的多级阻抗匹配巴伦。采用寄生贴片、领结型设计等技术,有效地拓展了天线频带带宽,实现了±45°双极化。仿真结果表明,天线的VSWR≤1.5和回波损耗大于15 d B的带宽达到了54.5%,可以覆盖GSM1800,CDMA2000,WCDMA,TD-SCDMA和LTE系统。在此频带范围内,该天线的驻波特性、方向性、增益和隔离度等指标均满足LTE多模式系统的指标。同时该天线也易于制作,适用于LTE多模式基站天线系统。     

PSEUDOHALOGEN CHEMISTRY. PART IV. HETEROLYTIC ADDITION OF THIOCYANOGEN TO ALKENES

Abstract

Thiocyanogen reacts slowly with alkenes, in the presence of a radical inhibitor in benzene or acetic acid in the dark at 25°, to yield α,β-dithiocyanates, α-isothiocyanates-β-thiocyanates and, in acetic acid, α-acetoxy-β-thiocyanates in varying proportions. The additions to alkyl alkenes are trans-stereospecific, and, in the case of the α-isothiocyanato-β-thiocyanates, non-regiospecific. The additions to aryl alkenes are trans-stereoselective and regiospecific, yielding the Markownikov-orientated α-isothiocyanato-β-thiocyanates. A heterolytic mechanism involving a two-step, kinetically controlled addition, with the formation of a cyano-sulfonium ion intermediate, e.g., 35, in the case of alkyl alkenes and an open carbonium ion, e.g., 36, in the case of aryl alkenes, is suggested. The diothiocyanate: isothiocyanato-thiocyanate ratios are discussed in terms of kinetic and steric control of reaction.     

无机固体材料中的忆阻效应

缺陷调控是固体化学中的基本问题,也是决定材料性能的核心要素。基于缺陷调控的忆阻效应将给未来电子信息领域带来全新的变革。本文综述了无机固体材料中忆阻效应的研究进展,主要总结了忆阻效应的产生机制和忆阻材料的类型,结合原子级p-n结的相关工作,提出深入明确电场下缺陷迁移机制将是从无机固体化学角度研究忆阻效应的重要方向。     

Nonstationarity and related measures for time‐dependent hartree–fock and multiconfigurational models

Based on an earlier article (Eberly and Singh, Phys. Rev. D 1973 , 7, 359) and related works on short‐time evolution, this article proposes a many‐electron formulation for the nonstationarity degree which can be assigned to quantum system at each time point. The key measure introduced, , is a nonstationarity index that can be thought of as an inverse nominal lifetime at each instance of time. The index is directly computed from the time derivative of one‐electron density matrix and is a size‐consistent quantity. In this article, the approach is developed for the time‐dependent Hartree–Fock (TDHF), single‐excitation (TDCIS), and time‐dependent full configuration interaction (TDFCI) models. As a rule, nonstationarity effects are more pronounced in correlated electron systems, and a joint analysis of and the multiconfigurational character of wave functions apparently provide a deeper insight into dynamical molecular processes. The performed calculations on small molecules in laser fields show a preference for the TDCIS model when comparing TDCIS and TDHF with the “exact” TDFCI model. © 2013 Wiley Periodicals, Inc.     

The influence of structural changes of symmetrical dimers containing two phenyl groups on liquid crystalline behaviour

Some symmetrical dimeric compounds containing biphenyl, biphenylcarboxylic acid or benzoiloxyphenyl moieties and polymethylene spacers were synthesised. The mesogenic properties of the synthesised compounds were investigated by optical microscopy, calorimetric and X-ray methods. It was shown that the location and direction of the ester bonds has a crucial significance in mesophase formation.     

Highly Efficient α‐Sialylation by Virtue of Fixed Dipole Effects of N‐Phthalyl Group: Application to Continuous Flow Synthesis of α(2‐3)‐and α(2‐6)‐Neu5Ac‐Gal Motifs by Microreactor

Highly α‐selective sialylation of sialic acid N‐phenyltrifluoroacetimidate with various galactose and lactose acceptors has been achieved by introducing the C‐5 N‐phthalyl group on the donor. The “fixed dipole effect” of the N‐phthalyl group was proposed to explain the high reactivity and α‐selectivity. The microfluidic system was applied to the present α‐sialylation, which is amenable to large‐scale synthesis. The N‐phthalyl group was removed by treatment with methylhydrazine acetate, for which protocol can be readily applied to the synthesis of a variety of sialic acid‐containing oligosaccharides.      

纳米孔缺陷导致单层黑磷电荷局域极大抑制非辐射电子-空穴复合的时域模拟

通常认为缺陷加速黑磷的非辐射电子-空穴复合,阻碍器件性能的持续提高。实验打破了这一认识。采用含时密度泛函理论结合非绝热分子动力学,我们发现P-P伸缩振动驱动非辐射电子-空穴复合,使纳米孔修饰的单层黑磷的激发态寿命比完美体系延长了约5.5倍。这主要归因于三个因素。一,纳米孔结构不但没有在禁带中引入深能级缺陷,而且由于价带顶下移使带隙增加了0.22 eV。二,除了带隙增加,纳米孔减小了电子和空穴波函数重叠,并抑制了原子核热运动,从而使非绝热耦合降低至完美体系的约1/2。三,退相干时间比完美体系延长了1.5倍。前两个因素战胜了第三个因素,使纳米孔结构激发态寿命延长至2.74 ns,而其在完美体系中约为480 ps。我们的研究表明可以制造合理数量和形貌的缺陷,如纳米孔,降低黑磷非辐射电子-空穴复合,提高光电器件效率。这一研究对于理解和调控黑磷和其它二维材料的激发态性质有重要意义。     

Surface domain potential difference-mediated efficient charge separation on a defective ZnIn2S4 microsphere photocatalyst

Low-efficiency charge separation in metal sulfides is a major obstacle to realizing high photocatalytic performance. Herein, we propose the concept of a similar surface domain potential difference between adjacent microdomains with and without surface S vacancies on ZnIn₂S₄ to mediate charge separation. Defective ZnIn₂S₄ microspheres (DZISNPs) are prepared through a solvothermal method combined with a low-temperature hydrogenation surface engineering strategy. The as-prepared DZISNPs with a narrowed bandgap of 2.38 eV possess a large specific surface area of 178.5 m² g^?1, a pore size of 6.89 nm, and a pore volume of 0.36 cm³ g^?1, which further improves the visible light absorption. The resultant DZISNPs exhibit excellent visible light activity (2.15 mmol h^?1 g^?1), which is ～two-fold higher than that of the original DZISNP. The experimental results and DFT calculations reveal that the enhanced property can be a result of the surface S vacancy-induced surface domain potential difference, promoting the spatial separation of electrons and holes. Furthermore, the long-term stability of the DZISNPs indicates that the formation of surface S vacancies can inhibit the photocorrosion of ZnIn₂S₄. This strategy provides new insights for fabricating highly efficient and stable sulfide photocatalysts.