Etched ZIF-8 as a Filler in Mixed-Matrix Membranes for Enhanced CO2/N2 Separation

Zeolite ZIF-8 has been etched with acid to form microporous ZIF-8-E crystals. These were then introduced into a polyethersulfone (PES) membrane matrix to enhance its CO₂/N₂ separation performance. Open through pores of size about 100 nm formed in the ZIF-8 crystals allow the ingrowth of polyethersulfone chains, ensuring a reduction in the number of nonselective voids, thereby achieving better interaction between ZIF-8-E and PES. As a result, the CO₂/N₂ separation performance of the ZIF-8-E/PES membrane increased significantly, showing a CO₂ permeability of 15.7 Barrer and a CO₂/N₂ ideal selectivity of 6.5.     

Dark lump excitations in superfluid Fermi gases

We study the linear and nonlinear properties of two-dimensional matter-wave pulses in disk-shaped superfluid Fermi gases.A Kadomtsev-Petviashvili I(KPI) solitary wave has been realized for superfluid Fermi gases in the limited cases of Bardeen-Cooper-Schrieffer(BCS) regime,Bose-Einstein condensate(BEC) regime,and unitarity regime.Onelump solution as well as one-line soliton solutions for the KPI equation are obtained,and two-line soliton solutions with the same amplitude are also studied in the limited cases.The dependence of the lump propagating velocity and the sound speed of two-dimensional superfluid Fermi gases on the interaction parameter are investigated for the limited cases of BEC and unitarity.     

Study of indoor radon and thoron progeny levels in surrounding areas of Nalbari, Assam, India

With the growing understanding of the role of radon and its daughter products as major sources of radiation exposure, the importance of large number of estimation of radon concentration in various parts of the country is realized. Inhalation of radon, thoron and their decay products is the major source of the total radioactive dose received by the human population from natural radiation. The indoor radon and thoron progeny levels in Nalbari area of Assam are studied by using the LR-115 (type II) Solid State Nuclear Track Detector in Plastic Twin Chamber dosimeter. Radon and thoron progeny levels in different types of dwellings for one full calendar year are presented in this paper. For Assam Type (A.T.) houses, indoor radon progeny concentrations vary from 0.17 to 0.64 mWL with an annual geometric mean of 0.27 mWL and that for Reinforced Cement Concrete (R.C.C.) houses vary from 0.22 mWL to 0.60 mWL with the annual geometric mean of 0.37 mWL. The thoron progeny levels in A.T. houses also vary from 0.01 to of 0.05 mWL with an annual geometric mean of 0.02 mWL and that for R.C.C. houses vary from 0.02 to 0.08 mWL with the annual geometric mean of 0.04 mWL.      

Diamond kinoform hard X‐ray refractive lenses: design,nanofabrication and testing

Motivated by the anticipated advantageous performance of diamond kinoform refractive lenses for synchrotron X‐ray radiation studies, this report focuses on progress in designing, nanofabricating and testing of their focusing performance. The method involves using lift‐off and plasma etching to reproduce a planar definition of numerically determined kinoform refractive optics. Tests of the focusing action of a diamond kinoform refractive lens at the APS 8‐ID‐I beamline demonstrate angular control of the focal spot.     

砷化镓激光器脊型波导的制备

本文主要研究了用湿法腐蚀的方法制备砷化镓激光器脊型波导,具体研究了砷化镓（GaAs）、铟镓磷（ InGaP）、铝镓铟磷（AlGaInP）材料的腐蚀。本文还成功地配制了能同时腐蚀铟镓磷和铝镓铟磷材料的腐蚀液。我们还分析了腐蚀时间和腐蚀浓度对脊型形状和脊型深度的影响。最后,在合适的条件下,本文得到了合适的脊型深度和光滑的脊型表面,而且得到的脊型的陡直度很小。这些结果表明这些腐蚀液将有用于激光器的制备。     

离子束刻蚀碲镉汞的沟槽深宽比改进

高深宽比离子束刻蚀技术是实现碲镉汞红外焦平面探测器的关键工艺技术.国内应用最广泛的双栅考夫曼刻蚀机束散角较大,沟槽深宽比较低.针对Ar离子束刻蚀机,尝试了三种提高深宽比的方法:选择不同的光刻胶做掩模、改变刻蚀角度和使用三栅离子源,并通过扫描电子显微镜(SEM)观察了碲镉汞刻蚀图形的剖面轮廓并计算了深宽比.分析了这些工艺方法对刻蚀图形轮廓的影响,获得了一些有助于获得高深宽比的离子束刻蚀沟槽的实验结果.     

单型掺杂柱电极的3D硅像素探测器的器件与制造工艺研究

设计了一种新的3D硅像素探测器的器件结构以简化制造工艺.该结构仅包含一种掺杂类型的柱状电极.通过工业级TCAD仿真对这种结构的电学特性进行了深入研究,阐述了它的技术优势及潜在缺陷.同时研究了制造这种3D硅像素探测器的特殊工艺流程和相关关键工艺,并给出了主要工艺结果.     

基于抽样分组长度分布的加密流量应用识别

基于确定性抽样数据分组序列的位置、方向、分组长度和连续性、有序性等流统计特征和典型的分组长度统计签名,并结合带数据分组位置、方向约束和半流关联动作的提升型DPI,提出了一种基于假设检验的加密流量应用识别统计决策模型,包括分组长度统计签名决策模型和DFI决策模型,并给出了相应的分组长度统计签名匹配算法以及基于DPI和DFI混合方法的加密流量应用识别算法。实验结果表明,该方法能够成功捕获加密应用在流坐标空间中独特的统计流量行为,并同时具有极高的加密识别精确率、召回率、总体准确率和极低的加密识别误报率、总体误报率。     

N_2对碲镉汞干法刻蚀诱导损伤的影响

报道了碲镉汞(HgCdTe)干法刻蚀诱导损伤的相关研究。由于干法刻蚀过程中,刻蚀剂主要采用CH_4/H_2,其裂解产生的H容易扩散到材料内部引起材料的电学性质发生改变,从而产生刻蚀诱导损伤。通过在刻蚀剂中引入一定量的N_2,可以抑制H对材料电学性质的改变作用。     

Ar/CO/NH3等离子体刻蚀多种磁性金属叠层

基于磁性合金的等离子体刻蚀工艺,在中国科学院微电子研究所自主研发的刻蚀设备中,使用Ar,CO和NH3的混合气体对用于形成磁随机存储器(MRAM)的多种磁性金属叠层进行刻蚀.采用两步刻蚀的方法刻蚀了多层磁性金属叠层,每一步的刻蚀气体组分不同,研究了Ar气在混合气体中的体积分数对材料刻蚀速率和侧壁形貌的影响.结果表明,刻蚀速率随着Ar气体积分数的增加而增加,而侧壁倾角则随着Ar气体积分数的增加而减小.两步刻蚀的方法可以根据材料的结构特点来控制Ar离子轰击的作用,可以得到大于21.4 nm/min的刻蚀速率和约90°的侧壁倾角.