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21.
Hua Zhang Nabil A. Amro Robert Elghanian Joseph Fragala 《Applied Surface Science》2006,253(4):1960-1963
A method, combining micro-contact printing (μCP), wet chemical etching and reactive ion etching (RIE), is reported to fabricate microstructures on Si and SiOx. Positive and negative structures were generated based on different stamps used for μCP. The reproducibility of the obtained microstructures shows the methodology reported herein could be useful in Micro-Electro-Mechanical Systems (MEMS), optical and biological sensing applications. 相似文献
22.
23.
Jau-Jiun Chen Soohwan Jang F. Ren Yuanjie Li Hyun-Sik Kim D. P. Norton S. J. Pearton A. Osinsky S. N. G. Chu J. F. Weaver 《Journal of Electronic Materials》2006,35(4):516-519
Wet etch rates at 25°C for Zn0.9Mg0.1O grown on sapphire substrates by pulsed laser deposition (PLD) were in the range 300–1100 nm · min−1 with HCl/H2O (5×10−3−2×10−2 M) and 120–300 nm · min−1 with H3PO4/H2O (5×10−3−2×10−2 M). Both of these dilute mixtures exhibited diffusion-limited etching, with thermal activation energies of 2–3 kCal · mol−1. By sharp contrast, the etch rates for ZnO also grown on sapphire by PLD were much slower in similar solutions, with rates
of 1.2–50 nm · min−1 in HCl/H2O (0.01–1.2 M) and 12–54 nm · min−1 in H3PO4/H2O (0.02–0.15 M). The etching was reaction limited over the temperature range 25–75°C, with activation energies close to 6
kCal · mol−1. The resulting selectivity of Zn0.9Mg0.1O over ZnO can be a high as ∼400 with HCl and ∼30 with H3PO4. 相似文献
24.
M.A.R. Alves 《Microelectronics Journal》2005,36(1):51-54
We developed a process to obtain sharper silicon tips by employing anisotropic etching in a KOH solution followed by SF6 plasma etch. The tips were further sharpened using the established thermal oxidation technique to decrease the cone angle and, therefore, obtain smaller curvature radii. We have analyzed the impact of such changes in geometry on a figure of merit associated with the field emission characteristics. An increase in the figure of merit by a factor of three was found in relation to the tips before sharpening. 相似文献
25.
完成了19F+27Al深部非弹性碰撞产物的角分布测量.初步分析了反应产B,C,N,O,F,Ne,Na,Mg和Al的实验室系角分布,展现出深部非弹性反应机制的特点,显示了反应系统随时间的演化过程. Angular distributions of fragments produced in the deep inelastic collision of~(19)F+~(27)Al have been measured for incident energy of 114 MeV at θ_(lab)= 9~(o), 24~(o), 40~(o), 55~(o), 70~(o) and 85~(o). Angular distributions of dissipative products B, C, N, O, F, Ne, Na, Mg and Al are analyzed to provide an evolution process of the intermediate dinuclear system formed in the reaction. 相似文献
26.
CR-39 is a highly sensitive etched track detector for neutron monitoring and dosimetry applications but its dose equivalent response is strongly direction dependent with respect to the incident neutrons. This is considered to be a major drawback for their use. In the present study, an attempt has been made to develop a pyramid shaped dosimeter, which consists of polyethylene material of thickness 1 mm with the provision to hold three CR-39 films at an angle of 35° to each other. The response of CR-39 in this configuration under optimum electrochemical etching at elevated temperature have been found nearly angular independent and therefore the dosimeter can be used for neutron monitoring, i.e. personnel as well as area monitoring. 相似文献
27.
Makoto Kasu Rangaiya Rao Susumu Noda Akio Sasaki 《Journal of Electronic Materials》1991,20(9):691-693
Properties of theDX centers in Al0.5Ga0.5As bulk alloy (b-AL), (AlAs)2 (GaSa)2 ordered superlattice (o-SL) and (AlAs)
m
(GaAs)
n
disordered superlattice (d-SL) (m = 1, 2, 3,n = 1, 2, 3) with the same macroscopic composition were measured and compared. By deconvolution of deep level transient spectroscopy
(DLTS) spectrum due to theDX center, we have found a decrease in the number of separate peaks in DLTS spectrum in an intentionally atomic ordered arrangement.
Visiting Scholar of the Japan Society for the Promotion of Science. On leave from Department of Electrical Engineering, San
Jose State University, San Jose, California 95192-0084, USA. 相似文献
28.
This paper tries to introduce the reader to the method of using photochemical re-action to copy holographic optical elements(HOEs)in relief.The holographic blazing gratingso copied is groove depth adjustable phase modulability enlarged through copying and 3.3times the diffraction efficiency(DE)of the original grating.It is expected that the newmethod will lead to the mass production of the light-weight HOEs at low cost. 相似文献
29.
A rigorous formulation of capacitance changes during trap filling processes is presented and used to accurately determine
the electron capture cross section of EL2 in GaAs at a particular temperature, 377K, in this case. The value, σn (377K) = 2.7 × 10−16 cm2, is compared with that predicted from the emission dependence. 相似文献
30.