X射线二极管平响应滤片的制作

针对X射线二极管平响应滤片的设计要求,采用电子束蒸发生长薄金层、紫外光曝光光刻、微电镀厚金层、体硅腐蚀制作镂空结构和等离子体刻蚀去掉PI等技术,成功制备了阵列结构的圆孔直径为5μm,周期为10.854μm,金层厚度分别为50,400nm的薄、厚两种金层滤片。电镀过程中采用台阶仪多次测量图形四周电镀厚度后取均值的方法得到尽可能准确的电镀厚金层。滤片交付实验后,在X光能量0.1～4keV取得的平响应曲线标准偏差与均值之比在13%以内,可以满足相关单位的具体物理研究实验要求。     

5G毫米波信道估计研究综述

信道估计是大规模多输入多输出(Multiple-Input Multiple-Output,MIMO)毫米波(Millimeter Wave,mmWave)系统关键技术之一.梳理了近几年大规模MIMO毫米波的信道估计策略,重点从压缩感知(Compressive Sensing,CS)、参数估计和深度学习三个方面进行了描...     

基于SOI材料的刻蚀光栅分波器的制作工艺

研究了基于绝缘材料上的硅（SOI）材料的平面波导刻蚀光栅分波器的主要制作工艺．利用电感耦合等离子体刻蚀（ICP）技术，在SOI材料上制作了垂直度大于89°的光滑的光栅槽面．氧化抛光后刻蚀侧壁的表面均方根粗糙度（RMS）有3nm的改善，达到7.27nm（采样面积6.2μm×26μm）．通过采用集成波导拐弯微镜代替弯曲波导使1×4分波器的器件尺寸仅为20mm×2.5mm．测试结果表明器件实现了分波功能．     

Electrical and optical properties of deep ultraviolet transparent conductive Ga2O3/ITO films by magnetron sputtering

Ga2O3/ITO films were prepared by magnetron sputtering on quartz glass substrates. The transmittance and sheet resistance of ITO films and Ga2O3/ITO films were measured by using a double beam spectrophotometer and four point probes. The effect of the ITO layer and Ga2O3 layer thickness on the electrical and optical properties of Ga2O3/ITO bi-layer films were investigated in detail. Ga2O3 (50 nm)/ITO (23 nm) films exhibited a low sheet resistance of 323 Ω/□ and high deep ultraviolet transmittance of 77.6% at a wavelength of 280 nm. The ITO layer controls the ultraviolet transmittance and sheet resistance of Ga2O3/ITO films. The Ga2O3 layer thickness has a marked effect on the transmission spectral shape of Ga2O3/ITO films in the violet spectral region.     

GaN/GaAs(001)与GaN/Al2O3(0001)外延层光辅助湿法腐蚀行为的比较

研究了用金属有机物气相外延(MOVPE)方法在GaAs(001)衬底上生长的立方相GaN(c-GaN)外延层的光辅助湿法腐蚀特性,并和生长在蓝宝石(0001)衬底上的六方相GaN(h-GaN) 外延层的光辅助湿法腐蚀特性进行了比较.实验发现c-GaN膜的暗态电流和光电流的变化不同于h-GaN膜的腐蚀电流的变化规律.对引起上述差异的原因进行了简单的讨论.     

微纳级双极晶体管的热耗散研究

对于双极性晶体管,由于自身存在的自加热现象,严重地影响着器件的特性。基于热电流方程、泊松方程及电流密度方程,在二维器件仿真环境下,进行了微纳级小尺寸npn双极性晶体管热现象的器件物理特性分析。重点研究了器件的集电极电流IC与晶格温度T的因变关系。研究结果显示,随着IC的增加,器件的晶格温度逐渐升高,VCE保持在3.0V、VBE达到最大值0.735V时,随器件晶格温度的升高VBE将减小。最后,笔者给出了描述晶体管温变关系的三维曲线。     

Constraining Si Particles within Graphene Foam Monolith: Interfacial Modification for High‐Performance Li+ Storage and Flexible Integrated Configuration

Pulverization of electrode materials and loss of electrical contact have been identified as the major causes for the performance deterioration of alloy anodes in Li‐ion batteries. This study presents the hierarchical arrangement of spatially confining silicon nanoparticles (Si NPs) within graphene foam (GF) for alleviating these issues. Through a freeze‐drying method, the highly oriented GF monolith is engineered to fully encapsulate the Si NPs, serving not only as a robust framework with the well‐accessible thoroughfares for electrolyte percolation but also a physical blocking layer to restrain Si from direct exposure to the electrolyte. In return, the pillar effect of Si NPs prevents the graphene sheets from restacking while preserving the highly efficient electron/Li⁺ transport channels. When evaluated as a binder‐free anode, impressive cycle performance is realized in both half‐cell and full‐cell configurations. Operando X‐ray diffraction and in‐house X‐ray photoelectron spectroscopy confirm the pivotal protection of GF to sheathe the most volume‐expanded lithiated phase (Li₁₅Si₄) at room temperature. Furthermore, a free‐standing composite film is developed through readjusting the pore size in GF/Si monolith and directly integrated with nanocellulose membrane (NCM) separator. Because of the good electrical conductivity and structural integrity of the GF monolith as well as the flexibility of the NCM separator, the as‐developed GF/Si‐NCM electrode showcases the potential use in the flexible electronic devices.     

蒙特卡罗法单晶硅的腐蚀工艺表面微观形态仿真研究

讨论了基于蒙特卡罗法模拟各向异性腐蚀加工的微观表面形态的仿真方法. 应用台阶流动模型,分析了(h,k,l)晶面中(h+2,h,h), (h,1,1), (h+2,h+2,h)以及(h,h,1)晶面族上反应活跃的台阶部位原子的排列特征,结合微掩模的作用和定义方法,提出了通过限制各晶面族台阶部位广泛存在的一级、二级邻居数为(3,7)原子移除概率的方法来模拟快速反应区域的吸附抑制现象. 把上述内容应用于RPF函数对(100)面的凸起结构,(110)面的带状条纹以及(111)面的三角形凹陷微观结构进行了仿真计算,解释了腐蚀中微观形貌的特征和成因. 算法在3种基础晶面和高指数 (322) 晶面的计算结果能够很好地符合实验中观察到的表面形态微观特征,验证了方法的有效性.     

湿法腐蚀DFB半导体激光器的均匀光栅的研究

论述了用湿法腐蚀电子束光刻的均匀光栅DFB激光器亚微米光栅的过程,研究了几种腐蚀液对半导体激光器外延材料中InP的腐蚀过程.用扫描电子显微镜(SEM)对其腐蚀情况进行了分析,通过调节腐蚀液HB1:HNO3:H2O的体积比,找到了对InP腐蚀的最佳配比(1:1:30)以及合适的腐蚀条件(室温23℃).利用这种腐蚀液得到的光栅图形可以满足DFB激光器的要求.     

FAST深空数据传输速率分析

500 m口径反射面射电望远镜(FAST)是目前世界口径最大、最灵敏的射电天文望远镜.为了分析FAST对深空探测任务的数据传输支持能力,利用数据传输链路预算分析方法,在规定特定工程余量的条件下,详细计算了FAST应用在内行星、外行星及柯伊伯带(Kuiper belt)天体探测任务中的数据传输速率.计算结果表明,FAST等效成口径300 m的地面接收天线,能使目前的深空通信数据下行传输速率提高70~400倍,未来其将会强有力地支持我国的火星、木星等深空探测任务.