Unexpected Sole Enol‐Form Emission of 2‐(2′‐Hydroxyphenyl)oxazoles for Highly Efficient Deep‐Blue‐Emitting Organic Electroluminescent Devices

Considerable efforts have been devoted to the development of highly efficient blue light‐emitting materials. However, deep‐blue fluorescence materials that can satisfy the Commission Internationale de l'Eclairage (CIE) coordinates of (0.14, 0.08) of the National Television System Committee (NTSC) standard blue and, moreover, possess a high external quantum efficiency (EQE) over 5%, remain scarce. Here, the unusual luminescence properties of triphenylamine‐bearing 2‐(2′‐hydroxyphenyl)oxazoles ( 3a–3c ) and their applications in organic light‐emitting diodes (OLEDs) are reported as highly efficient deep‐blue emitters. The 3a ‐based device exhibits a high spectral stability and an excellent color purity with a narrow full‐width at half‐maximum of 53 nm and the CIE coordinates of (0.15, 0.08), which is very close to the NTSC standard blue. The exciton utilization of the device closes to 100%, exceeding the theoretical limit of 25% in conventional fluorescent OLEDs. Experimental data and theoretical calculations demonstrate that 3a possesses a highly hybridized local and charge‐transfer excited state character. In OLEDs, 3a exhibits a maximum luminance of 9054 cd m^?2 and an EQE up to 7.1%, which is the first example of highly efficient blue OLEDs based on the sole enol‐form emission of 2‐(2′‐hydroxyphenyl)azoles.     

MEMS THz滤波器的制作工艺

基于MEMS技术制作了太赫兹(THz)滤波器样品,研究了制作滤波器的工艺流程方案,其关键工艺技术包括硅深槽刻蚀技术、深槽结构的表面金属化技术、阳极键合和金-硅共晶键合技术。采用4μm的热氧化硅层作刻蚀掩膜,成功完成了800μm的深槽硅干法刻蚀;采用基片倾斜放置、多次离子束溅射和电镀加厚的方法完成了深槽结构的表面金属化,内部金属层厚度为3~5μm;用硅-玻璃阳极键合技术和金-硅共晶键合技术实现了三层结构、四面封闭的波导滤波器样品加工。测试结果表明,研制的滤波器样品中心频率138GHz,带宽15GHz,插损小于3dB。     

Scaling the Aspect Ratio of Nanoscale Closely Packed Silicon Vias by MacEtch: Kinetics of Carrier Generation and Mass Transport

Metal‐assisted chemical etching (MacEtch) has shown tremendous success as an anisotropic wet etching method to produce ultrahigh aspect ratio semiconductor nanowire arrays, where a metal mesh pattern serves as the catalyst. However, producing vertical via arrays using MacEtch, which requires a pattern of discrete metal disks as the catalyst, has often been challenging because of the detouring of individual catalyst disks off the vertical path while descending, especially at submicron scales. Here, the realization of ordered, vertical, and high aspect ratio silicon via arrays by MacEtch is reported, with diameters scaled from 900 all the way down to sub‐100 nm. Systematic variation of the diameter and pitch of the metal catalyst pattern and the etching solution composition allows the extraction of a physical model that, for the first time, clearly reveals the roles of the two fundamental kinetic mechanisms in MacEtch, carrier generation and mass transport. Ordered submicron diameter silicon via arrays with record aspect ratio are produced, which can directly impact the through‐silicon‐via technology, high density storage, photonic crystal membrane, and other related applications.     

“北斗”救生终端海上自适应功率退避算法

受海况、浸水、结冰、对星等因素影响,飞行员海上遇险后报位可靠性较低,工作时长较短。为此,提出一种自适应功率退避方法,在对报位影响因素分析基础上,利用深度神经网络,通过对经纬度、高度、俯仰角、方向、加速度、速度、浸水、信号、电量等多维度数据进行学习,拟合出覆冰、浪涌、液面等信号特征与环境特征联想模型,自适应控制信号发射时机,实现功耗的有效控制。试验表明,该方法将通信成功率及工作时长分别由36.3%、6.0 h提升至73.3%、8.6 h。     

基于深度学习的复杂沙漠背景SAR目标检测

SAR目标检测,因成像场景大、背景复杂多变而极具挑战。传统基于恒虚警率的SAR目标检测方法极易受背景干扰。针对上述问题,提出一种基于深度学习的复杂沙漠背景SAR目标端对端检测识别系统。即采用小规模沙漠背景下的SAR图像数据对Faster-RCNN网络进行迁移训练,一体化完成典型目标的检测与识别。基于合成数据集Desert-SAR的试验结果表明,与传统方法相比,该方法检测速度更快、准确率更高、鲁棒性更强。     

基于深度神经网络的自适应波束形成算法

阵列天线接收到的期望信号和干扰信号,其入射的到达角度(Angle of Arrival,AOA)总是快速变化的,而传统波束形成算法计算量大,无法实时计算。针对这一问题,提出了一种基于深度神经网络的自适应波束形成(Deep Neural Network Adaptive Beamforming,DNNABF)算法,用入射信号AOA组成的向量作为网络输入,网络输出逼近最小方差无失真响应(Minimum Variance Distortionless Response,MVDR)算法求得的权矢量。仿真结果表明,卷积神经网络(Convolutional Neural Network,CNN)与DNNABF方法都能准确拟合MVDR算法权矢量,可在入射信号AOA快速变化时自适应地形成波束和零陷,但DNN计算速度相对MVDR有将近6.5倍的提升,训练模型时间也远低于CNN。     

低信噪比下基于YOLOv3的昆虫目标检测

掌握昆虫迁飞规律对于农业防治和生态学研究具有重大意义,雷达正是检测昆虫迁飞最有效的手段.昆虫回波弱,传统的恒虚警检测(Constant False Alarm Rate,CFAR)算法在低信噪比(Signal To Noise Ratio,SNR)时的检测性能下降;同时昆虫目标体积小、飞行速度慢,在距离维和多普勒维的扩...     

X射线二极管平响应滤片的制作

针对X射线二极管平响应滤片的设计要求,采用电子束蒸发生长薄金层、紫外光曝光光刻、微电镀厚金层、体硅腐蚀制作镂空结构和等离子体刻蚀去掉PI等技术,成功制备了阵列结构的圆孔直径为5μm,周期为10.854μm,金层厚度分别为50,400nm的薄、厚两种金层滤片。电镀过程中采用台阶仪多次测量图形四周电镀厚度后取均值的方法得到尽可能准确的电镀厚金层。滤片交付实验后,在X光能量0.1～4keV取得的平响应曲线标准偏差与均值之比在13%以内,可以满足相关单位的具体物理研究实验要求。     

基于SOI材料的刻蚀光栅分波器的制作工艺

研究了基于绝缘材料上的硅（SOI）材料的平面波导刻蚀光栅分波器的主要制作工艺．利用电感耦合等离子体刻蚀（ICP）技术，在SOI材料上制作了垂直度大于89°的光滑的光栅槽面．氧化抛光后刻蚀侧壁的表面均方根粗糙度（RMS）有3nm的改善，达到7.27nm（采样面积6.2μm×26μm）．通过采用集成波导拐弯微镜代替弯曲波导使1×4分波器的器件尺寸仅为20mm×2.5mm．测试结果表明器件实现了分波功能．     

Electrical and optical properties of deep ultraviolet transparent conductive Ga2O3/ITO films by magnetron sputtering

Ga2O3/ITO films were prepared by magnetron sputtering on quartz glass substrates. The transmittance and sheet resistance of ITO films and Ga2O3/ITO films were measured by using a double beam spectrophotometer and four point probes. The effect of the ITO layer and Ga2O3 layer thickness on the electrical and optical properties of Ga2O3/ITO bi-layer films were investigated in detail. Ga2O3 (50 nm)/ITO (23 nm) films exhibited a low sheet resistance of 323 Ω/□ and high deep ultraviolet transmittance of 77.6% at a wavelength of 280 nm. The ITO layer controls the ultraviolet transmittance and sheet resistance of Ga2O3/ITO films. The Ga2O3 layer thickness has a marked effect on the transmission spectral shape of Ga2O3/ITO films in the violet spectral region.