国外离子束系统（IBS）发展概况

综述了国外离子束刻蚀和沉积系统的研究进展，指出了离子束系统在半导体技术研究，开发和生产中的重要性。     

低压铝箔交流腐蚀研究

在３０Ｈｚ频率下，通过铝箔在ＨＣｌ＋Ｈ２ＳＯ４＋ＨＮＯ３＋Ｈ３ＰＯ４体系中的交流腐蚀，研究腐蚀液组成中腐蚀主体及缓蚀剂对铝箔腐蚀的作用，探讨腐蚀过程中电源频率、腐蚀液温度、电流密度及腐蚀时间对铝箔腐蚀的影响。腐蚀液组成的配比恰当，有利于比容的提高。在特定的频率下采用合适的腐蚀液温度、适宜的电流密度和腐蚀时间可以提高铝箔的静电容量。     

High-density plasma etching of indium-zinc oxide films in Ar/Cl2 and Ar/CH4/H2 chemistries

The dry etching characteristics of transparent and conductive indium-zinc oxide (IZO) films have been investigated using an inductively coupled high-density plasma. While the Cl₂-based plasma mixture showed little enhancement over physical sputtering in a pure argon atmosphere, the CH₄/H₂/Ar chemistry produced an increase of the IZO etch rate. On the other hand, the surface morphology of IZO films after etching in Ar and Ar/Cl₂ discharges is smooth, whereas that after etching in CH₄/H₂/Ar presents particle-like features resulting from the preferential desorption of In- and O-containing products. Etching in CH₄/H₂/Ar also produces formation of a Zn-rich surface layer, whose thickness (∼40 nm) is well-above the expected range of incident ions in the material (∼1 nm). Such alteration of the IZO layer after etching in CH₄/H₂/Ar plasmas is expected to have a significant impact on the transparent electrode properties in optoelectronic device fabrication.     

Microstructure effect on microtopography of chemically etched α + β Ti alloys

Microstructure effect on chemical etching behavior of the annealed Ti-6Al-4V and Ti-3Al-2.5V titanium (Ti) alloys was compared with that of unalloyed commercially pure titanium. The microstructural evolution of structure phases after annealing the titanium and its alloys at temperature near and above β transus and followed by furnace cooling to room temperature was studied using optical microscope, scanning electron microscope and X-ray diffraction techniques. The microstructure study illustrates that the heat treatment enhanced partitioning effect allows extensive formation of hemispherical and near spherical pits roughened surface to be readily acquired by chemically etching the annealed α + β titanium alloys. The kinetics of the chemical etching reaction process show a linear dependence on time. The annealed α + β titanium alloys that exhibit relatively lower weight loss and thickness reduction rate illustrate less chemical activity than the annealed unalloyed titanium.     

硫酸/盐酸比例和Al~(3+)含量对铝箔隧道孔生长的影响

研究了硫酸/盐酸比例、温度和Al3+含量对高纯铝箔隧道孔生长的影响,发现随着硫酸浓度增加,温度对隧道孔极限长度和孔径的影响减小,在本文条件下隧道孔生长的临界温度最低可降低到35℃。在电解液中一定含量的Al3+可以避免铝箔表面形成大孔,从而改善隧道孔分布均匀性。     

1μm宽硅深槽刻蚀技术

介绍了硅深槽刻蚀的基本原理和影响刻蚀效果的几个主要工艺因素。提出了一种实现１μｍ宽的硅深槽刻蚀工艺途径；并给出了１μｍ宽、８μｍ深、侧壁及底部光洁的硅深槽刻蚀工艺条件。     

非晶硅基薄膜的等离子体刻蚀光发射谱检测

本文研究了采用锁定放大相干检测技术的等离子体光发射谱检测系统。用该系统检测了仅用CF4作为刻蚀气体刻蚀非晶硅基薄膜的等离子体光发射谱。分析了检测结果和刻蚀机理。     

InAs/GaAs自组织量子点的DLTS谱

将DLTS用于对InAs/GaAsQD结构样品的测量,测定了QD能级发射载流子的热激活能;获得了QD能级俘获电子过程伴随有多声子发射(MPE)、QD能级存在一定程度的展宽、以及在某些特定的生长条件下,存在亚稳生长构形的实验证据.结果表明:DLTS在QD体系的研究中有其特有的功能     

a—Si等离子体刻蚀的研究

将等离子体刻蚀应用于非晶硅的刻蚀中,得到边缘整齐、分辩率高、重复性好、图形清晰的满意效果。通过调整工艺条件,可严格控制刻蚀速率。其特点优于湿式化学腐蚀,是一种非晶硅特性研究和器件制造中值得推广和使用的方法。