Classes of 2-step nilpotent lie algebras

We give a characterization of the Lie algebras of H-type independent of the inner product used in the definition. We classify the real 2-step nilpotent Lie algebras with 2-dimensional center. Using these results we give examples of regular Lie algebras that are not H-type.     

Synthesis and Characterization of Polyurethane/Poly (Urethane Modified Bismaleimide-Bismaleimide) IPNs

Themethodofblendingbyinterpenetratingpolymernetworks(IPNs)isoftenusedtoobtainelastomerswithpropertiesinexcessofthoseexhibitedbytraditionalblendingways'.Inthispaper,aseriesofnovelpolyurethane/poly(urethanemodifiedbismaleimide-bismaleimide)(PU/P(UBMI-BMI))IPNsweresynthesizedandcharacterizedby'HNMR,FTIR,TEM,andTGAanaIysis.BMIwassynthesizedasfollowsfUBMlwasintroducedtomodifythecompatibilityofthetwonetworks,whichwassynthesizedasfollows:Where(l)ishydroxyl-terminatedpoly(diethyleneadipa…     

A theoretical study of band structure properties for III–V nitrides quantum wells

Reliable and precise knowledge about the strain and composition effects on the band structure properties is crucial for the optimization of InGaN based heterostructures for electronic and optoelectronic device applications. AlInGaN as quaternary barrier material permits to control the band gap and the lattice constant independently. Using the model solid theory and the multi-band k.p interaction model, we investigate the composition effects on band offsets and band structure for pseudomorphic Ga_1−xIn_xN/Al_zIn_yGa_1−y−zN (0 0 1) heterointerfaces having zinc-blende structure. The results show that both conduction and valence band states are strongly modified while varying In and Al contents in the well and barrier materials. Furthermore, it is found that using AlInGaN as the barrier material allows the design of heterostructures including InGaN wells with tensile, zero or compressive strain. Such results give new insights for III-nitride compounds based applications and especially may guide the design of white-light emission diodes.     

The homotopy limit problem for Hermitian K-theory, equivariant motivic homotopy theory and motivic Real cobordism

The homotopy limit problem for Karoubi?s Hermitian K-theory (Karoubi, 1980) [26] was posed by Thomason (1983) [44]. There is a canonical map from algebraic Hermitian K-theory to the Z/2-homotopy fixed points of algebraic K-theory. The problem asks, roughly, how close this map is to being an isomorphism, specifically after completion at 2. In this paper, we solve this problem completely for fields of characteristic 0 (Theorems 16, 20). We show that the 2-completed map is an isomorphism for fields F of characteristic 0 which satisfy cd₂(F[i])<∞, but not in general.     

Synthesis and characterization of poly(vinylidene fluoride‐co‐chlorotrifluoroethylene)‐grafted‐poly(acrylonitrile) via single electron transfer–living radical polymerization process

Preparation of functional fluoromaterials through chemical modification of traditional fluoropolymers has been recognized as an economic and convenient strategy to expand the application areas of fluoropolymers. Poly(vinylidene fluoride‐co‐chlorotrifluoroethylene)‐grafted‐polyacrylonitrile (P(VDF‐co‐CTFE)‐g‐PAN) has been successfully synthesized via single electron transfer–living radical polymerization (SET–LRP) process initiated with macroinitiator P(VDF‐co‐CTFE) in the presence of trace amount of Cu(0)/tris(2(dimethylamino)ethyl)amine (Me₆‐TREN) in dimethyl sulfoxide (DMSO) at ambient temperature. The typical side reactions happened on P(VDF‐co‐CTFE) induced by the nitrogen‐containing solvents and high reaction temperature in atom transfer radical polymerization process could be avoided in SET–LRP process by using the mild reaction conditions. Well‐controlled polymerization features were observed under varied reaction conditions including the different reaction temperature, catalyst concentration, as well as monomer amount in feed. An induction period of 0.5–1.0 h in the polymerization procedure was observed at low temperature, which may be attributed to the Cu₂O from the surface of the Cu(0) powder. When Cu(0) catalyst is activated, the introduction period is eliminated. The polymerization rates were decelerated by adding excessive Me₆‐TREN for the formation of more stable CuCl₂/(Me₆‐TREN)₂. The structure of P(VDF‐co‐CTFE)‐g‐PAN was demonstrated by FTIR, NMR, DSC, and TGA. © 2012 Wiley Periodicals, Inc. J Polym Sci Part A: Polym Chem, 2012