高漏偏压下AlGaN/GaN HEMT噪声性能的研究

The advent of fully integrated GaN PA-LNA circuits makes it meaningful to investigate the noise performance under high drain bias. However, noise performance of AlGaN/GaN HEMTs under high bias has not received worldwide attention in theoretical studies due to its complicated mechanisms. The noise value is moderately higher and its rate of increase is fast with increasing high voltage. In this paper, several possible mechanisms are proposed to be responsible for it. Impact ionization under high electric field incurs great fluctuation of carrier density, which increases the drain diffusion noise. Besides, higher gate leakage current related shot noise and a more severe self-heating effect are also contributors to the noise increase at high bias. Analysis from macroscopic and microscopic perspectives can help us to design new device structures to improve noise performance of AlGaN/GaN HEMTs under high bias.     

Annealing before gate metal deposition related noise performance in AlGaN/GaN HEMTs

For a further improvement of the noise performance in AlGaN/GaN HEMTs, reducing the relatively high gate leakage current is a key issue. In this paper, an experiment was carried out to demonstrate that one method during the device fabrication process can lower the noise. Two samples were treated differently after gate recess etching: one sample was annealed before metal deposition and the other sample was left as it is. From a comparison of their Ig-Vg characteristics, a conclusion could be drawn that the annealing can effectively reduce the gate leakage current. The etching plasma-induced damage removal or reduction after annealing is considered to be the main factor responsible for it. Evidence is given to prove that annealing can increase the Schottky barrier height. A noise model was used to verify that the annealing of the gate recess before the metal deposition is really effective to improve the noise performance of AlGaN/GaN HEMTs.     

一种无片外电容LDO的稳定性分析

电路如果存在不稳定性因素,就有可能出现振荡。本文对比分析了传统LDO和无片电容LDO的零极点,运用电流缓冲器频率补偿设计了一款无片外电容LDO,电流缓冲器频率补偿不仅可减小片上补偿电容而且可以增加带宽。对理论分析结果在Cadence平台基上于CSMC0.5um工艺对电路进行了仿真验证。本文无片外电容LDO的片上补偿电容仅为3pF,减小了制造成本。它的电源电压为3.5～6 V,输出电压为3.5 V。当在输入电源电压6 V时输出电流从100μA到100mA变化时,最小相位裕度为830,最小带宽为4.58 MHz     

基于MOCCCII的双模式二阶通用滤波器

提出了一种基于多输出端口电流控制电流传输器(MOCCCII,multiple outputs current controlled conveyor)的双模式二阶通用滤波器,该滤波器结构简单,仅由5个有源器件、2个接地电容构成, 无须外接电阻.该电路在不改变内部电路结构的情况下能实现电压模式和电流模式滤波器,且每一种工作模式都能实现高通、低通、带通等多种滤波功能,因此该电路具有通用性.面向实际电路完成了PSPICE仿真,结果表明提出的电路正确有效.     

基于人眼视觉特性的混合滤波算法

为了有效地滤除混合噪声,本文提出了一种基于人眼视觉特性的混合滤波算法。该方法首先采用基于人眼视觉特性的噪声敏感系数作为阈值来确定脉冲噪声点,对检测出脉冲噪声点采用自适应窗口大小的迭代中值滤波进行滤波,而对于含有高斯噪声的像素点则采用一种保护细节的改进的自适应模糊滤波器进行处理。该算法与标准滤波方法及其它改进混合滤波算法相比,具有更好的滤波性能。     

碲镉汞光伏探测器的变面积表面钝化研究

利用同一片碲镉汞材料制备了由单层ZnS和双层CdTe/ZnS作钝化膜的变面积光伏探测器,对两种钝化膜结构的变面积器件进行了对比研究.通过分析两种器件的电流-电压(I-V)特性曲线以及零偏电阻-面积乘积(RoA)与周长-面积比(p/A)的关系曲线,发现ZnS钝化的器件具有较大的表面漏电流;通过分析两种器件的电流噪声与暗电流的关系,发现ZnS钝化的器件的噪声特性较接近散粒噪声,CdTe/ZnS双层钝化的器件则表现出较好的基本1/f噪声特性,使得器件噪声要小于单层ZnS钝化的器件.     

CCD类成像器件的噪声研究

CCD图像传感器的输出信号是空间采样的离散模拟信号,其中夹杂着各种噪声和干扰。对CCD信号进行处理的目的就是在不损失图像细节的前提下,尽可能地消除噪声和干扰,以提高信噪比,获取高质量的图像。为此,必须对CCD的噪声种类和特性有所了解,并针对各种噪声进行相应的去噪处理。所以对CCD成像器件噪声部分的研究,有利于提高CCD成像器件的分辨率,也能提高探测微弱光的能力。     

一种新型低噪声麦克风前置放大器的设计

传声器集成电路将接收到的麦克风声音信号转换成电流信号,再由前置放大器放大成电压信号。通常,当声音信号很微弱时,放大器放大声音信号时也放大了噪声,造成被放大的声音信号的信噪比很低。对两种电路进行了仿真试验,比较了Claus前置放大器和Eduard CMOS前置放大器的噪声特点。采用0.18μm CMOS工艺进行仿真,分析了电路的噪声频谱密度,提出了一种改进型CMOS前置放大器,有效地改善了前置放大器的信噪比。     

一种海洋表面矢量流图生成算法的研究

针对海洋动力学重要参数－海流,利用两台雷达的海洋表面径向流图,来生成海洋表面矢量流图的算法,并给出计算机模拟的结果。结果表明,该算法获得的海洋表面矢量流场效果良好,达到了工程应用的预期效果。     

基于智能手机平台高清语音的设计与实现

MT6572平台是由联发科公司推出的双核Cortex-A7主频1.0GHz的智能手机平台。该平台支持AMR-NB和AMR-WB语音编解码,支持双麦克风噪声消除算法等等。文章介绍了MT6572平台的语音性能特点和高清语音的具体要求,并提出了手机实现高清语音的设计要点。